Bromine Enrichment in the Near-Surface Region of Br-Doped NaCl Single Crystals Diagnosed by Rutherford Backscattering Spectrometry

2007 ◽  
Vol 111 (20) ◽  
pp. 4312-4321 ◽  
Author(s):  
M. Hess ◽  
U. K. Krieger ◽  
C. Marcolli ◽  
T. Huthwelker ◽  
M. Ammann ◽  
...  
Keyword(s):  
Single Crystals ◽  
Rutherford Backscattering Spectrometry ◽  
Surface Region ◽  
Rutherford Backscattering ◽  
Near Surface

Hgl−xCdxTe Near Surface Characterization using Computer Aided Rutherford Backscattering Spectrometry

1986 ◽  
Vol 90 ◽  
Author(s):  
T.-M. Kao ◽  
T. W. Sigmon
Keyword(s):  
Surface Characterization ◽  
Rutherford Backscattering Spectrometry ◽  
Grazing Angle ◽  
Surface Region ◽  
Rutherford Backscattering ◽  
Structural Defects ◽  
Near Surface ◽  
Lattice Disorder ◽  
Defect Densities ◽  
Distributed Dislocations

ABSTRACTIn this work, we report the use of Rutherford backscattering(RBS) measurements and computer simulations to provide accurate stoichiometry information and semi-quantitative defect densities for the near surface region of Hg1−xCdxTe (MCT). The accuracy of the Hg1−xCdx Te x-values determined by our method is found to be comparable to other commonly used methods, such as FTIR or the electron microprobe. The data obtained as structural defects from RBS channeling measurements are in basic agreement with other techniques, such as chemical etching. The sensitivity of the channeling measurement to uniformly distributed dislocations is found to be about 107−108 cm−2, however, for dislocations forming subgrains, the detectable level of dislocation comes to 105 – 106 cm−2. The depth profiles of lattice disorder resulting from ion implantation into MCT are also extracted from RBS channeling measurements using these simulation programs. These profiles are found to closely match the calculated profiles for the displaced atoms calculated using an implantation modeling program (TRIM). We also report on the use of channeling-in-grazing-angle-out technique for evaluating the stoichiometry of the first few monolayers of the MCT surface.

A rutherford backscattering spectrometry study of Zn implanted BeO single crystals

1999 ◽  
Vol 150 (1-4) ◽  
pp. 157-160 ◽  
Author(s):  
M. V. Yakushev ◽  
A. N. Varaksin ◽  
I. N. Ogorodnikov ◽  
A. V. Kruzhalov
Keyword(s):  
Single Crystals ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering

scholarly journals Ion Beam-Induced Changes in Optical Properties of MgO

1995 ◽  
Vol 396 ◽  
Author(s):  
Ying Qian ◽  
D. Ila ◽  
K. X. He ◽  
M. Curley ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Sample Characterization ◽  
Ag Clusters ◽  
Induced Changes ◽  
Optical Spectrophotometry

AbstractThe implantation of Ag into MgO (100) single crystals, followed by thermal annealing at 1100°C, leads to dramatic changes in their optical properties. The changes in the optical properties are due to the presence of small Ag clusters which are formed in the annealed samples. The small Ag clusters are obtained by thermal annealing of the implanted MgO crystals between 600°C and 1100°C to investigate the changes in cluster sizes and to correlate with changes in their optical properties. Sample characterization is carried out using optical spectrophotometry to confirm the effective presence of Ag clusters and Rutherford Backscattering Spectrometry (RBS) to study the profile of Ag clusters.

The Formation of High-Coercivity, Oriented, Nanophase Cobalt Precipitates in Al2O3 Single Crystals by Ion Implantation

1999 ◽  
Vol 581 ◽  
Author(s):  
S. Honda ◽  
F. A. Modine ◽  
T. E. Haynes ◽  
A. Meldrum ◽  
J. D. Budai ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Ion Implantation ◽  
Single Crystals ◽  
Data Storage ◽  
Magnetic Circular Dichroism ◽  
Surface Region ◽  
Magnetic Data ◽  
High Coercivity ◽  
Saturation Field ◽  
Near Surface

ABSTRACTIon-implantation and thermal-processing methods have been used to form nanophase magnetic precipitates of metallic cobalt that are embedded in the near-surface region of single crystals of Al2O3. The Co precipitates are isolated, single-crystal particles that are crystallographically oriented with respect to the host Al2O3 lattice. Embedded nanophase Co precipitates were formed by the implantation of Co+ at an energy of 140 keV and a dose of 8 × 1016 ions/cm2 followed by annealing in a reducing atmosphere. The implanted/annealed Co depth profile, particle size distributions and shapes, and the orientational relationship between the nanophase precipitates and the host crystal lattice were determined using RBS/channeling, transmission electron microscopy, and x-ray diffraction. Magneto-optical effects arising from Co precipitates formed in the near-surface region of Al2O3 were observed and characterized using magnetic circular dichroism. Magnetic properties of the Co-particle/host nanocomposites were investigated in the temperature range of 77 to 295 K in applied fields of up to 10 kG using a superconducting quantum interference device (SQUID) magnetometer. Implantation of the Co particles by Pt or Xe ions produced a large anisotropic increase in their coercivity. Accordingly, these magnetic nanoparticle systems may be of interest for magnetic data storage applications. Details of the magnetic properties of the Co/Al2O3 nanocomposites including their retentivity, coercivity, saturation field, and magnetic anisotropy are presented.

Properties of Gallium Disorder and Gold Implants in GaN

2000 ◽  
Vol 647 ◽  
Author(s):  
W. Jiang ◽  
W.J. Weber ◽  
S. Thevuthasan ◽  
V. Shutthanandan
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
High Mobility ◽  
Surface Region ◽  
Intermediate Stage ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
The Mean ◽  
Fluence Range

AbstractEpitaxial single-crystal GaN films on sapphire were implanted 60° off the <0001> surface normal with 1 MeV Au2+ or 3 MeV Au3+ over a fluence range from 0.88 to 86.2 ions/nm2 at 180 and 300 K. The implantation damage was studied in-situ using 2 MeV He+ Rutherford backscattering spectrometry in channeling geometry (RBS/C). The disordering rate in the near- surface region is faster than at the damage peak. In all cases, results show an intermediate stage of Ga disorder saturation at the damage peak. During the thermal annealing at 870 K for 20 min, some Au implants in GaN diffuse into the amorphized surface region, while the remaining Au atoms distribute around the mean ion-projected-range. These results suggest a high mobility of both Ga defects and Au implants in GaN. Deeper damage implantation by 3 MeV Au3+ indicates that GaN cannot be completely amorphized up to the highest ion fluence (86.2 ions/nm2) applied at 300 K.

Utilization of Charged Particle Backscattering to Study the Near Surface Region of Glasses. Application to Depth Profiling of Lanthanium, Cerium, Thorium and Uranium Induced by Aqueous Leaching.

1981 ◽  
Vol 11 ◽  
Author(s):  
Patrick Trocellier ◽  
Bernard Nens ◽  
Charles Engelmann
Keyword(s):  
Charged Particle ◽  
Depth Profiling ◽  
Surface Region ◽  
Rutherford Backscattering ◽  
Heavy Elements ◽  
Chemical Information ◽  
Concentration Profiles ◽  
Near Surface ◽  
Particle Backscattering

The Rutherford backscattering technique is useful for the determination of the concentration profiles of some heavy elements in the near surface region of glasses, but is not able to provide chemical information on the elements detected.

Formation and phase transition of VO2 precipitates embedded in sapphire

1999 ◽  
Vol 14 (6) ◽  
pp. 2602-2610 ◽  
Author(s):  
Laurence A. Gea ◽  
J. D. Budai ◽  
L. A. Boatner
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Single Crystals ◽  
Surface Region ◽  
Optical Quality ◽  
Host Lattice ◽  
Near Surface ◽  
Thermally Induced ◽  
Metal Phase Transition

Crystallographically coherent precipitates of vanadium dioxide (VO2) have been formed in the near-surface region of single crystals of sapphire (Al2O3) using a combination of ion implantation and thermal treatments. As in the case of either bulk VO2 single crystals or thin films of VO2, the thermally induced semiconductor-to-metal phase transition of the embedded VO2 precipitates is accompanied by a large hysteretic change in the infrared optical transmission. The VO2 precipitate transition temperature (Tc = 72 to 85 °C) is higher than that of bulk VO2 (Tc = 68 °C) and is sensitive to the implantation conditions. The present results show that the damage resulting from the coimplantation of vanadium and oxygen into an Al2O3 host lattice dictates the final microstructure of the VO2 precipitates and, consequently, affects the transition temperature, as well as the optical quality of the VO2/Al2O3 surface-nanocomposite precipitate system.

Optimizing the Depth Resolution of Rutherford Backscattering Through Modeling of Noise Sources

1986 ◽  
Vol 69 ◽  
Author(s):  
John R. Abelson ◽  
T. W. Sigmon
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Grazing Angle ◽  
Depth Resolution ◽  
Normal Incidence ◽  
Low Noise ◽  
Forward Scattering ◽  
Rutherford Backscattering ◽  
Acceptance Angle ◽  
Noise Sources ◽  
Near Surface

AbstractGrazing angle configurations improve the depth resolution of Rutherford Backscattering Spectrometry (RBS) because the path length of scattered particles is geometrically increased. But in the limit of very grazing angles the resolution degrades due to the finite detector acceptance angle and low angle forward scattering of the beam, considerations which are not present in near-normal incidence geometries. The forward scattering, for example, worsens the depth resolution approximately as the square of the depth, rather than the familiar square root dependence of energy straggling. We present a simple computational scheme which predicts the depth resolution in any target as a function of scattering depth, beam energy, and the grazing angle. The calculations are simpler than previous studies because we use analytic expressions in place of numerical inputs without loss of accuracy. The results lead directly to an optimum depth resolution. We find good agreement between the predicted resolution and measurements on thin silicon dioxide and amorphous silicon films. Finally, we calculate the resolution expected with the use of ion beams heavier than He+, and find improved near surface depth resolution if a low noise detector is used.

Ion Beam Induced Modifications of Biocompatible Polymer

2015 ◽  
Vol 239 ◽  
pp. 149-160
Author(s):  
A.M. Abdul-Kader ◽  
Andrzej Turos
Keyword(s):  
Friction Coefficient ◽  
Surface Properties ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Chemical Properties ◽  
Surface Region ◽  
Ion Bombardment ◽  
Hydrogen Release ◽  
Nuclear Reaction Analysis ◽  
Near Surface

Ion beam bombardment has shown great potential for improving the surface properties of polymers. In this paper, the ion beam-polymer interaction mechanisms are briefly discussed. The main objective of this research was to study the effects of H-ion beam on physico-chemical properties of Ultra-high-molecular-weight polyethylene (UHMWPE) as it is frequently used in biomedical applications. UHMWPE was bombarded with 65 keV H-ions to fluences ranging from 1x1014–2x1016 ions/cm2. Changes of surface layer composition produced by ion bombardment of UHMWPE samples were studied. The hydrogen release and oxygen uptake induced by ion beam bombardment were determined by Nuclear reaction analysis (NRA) using the 1H(15N, αγ)12C and Rutherford backscattering spectrometry (RBS), respectively. Tribological and hardness properties at the polymer near surface region were studied by means of friction coefficient and micro-hardness testers, respectively. Wettability of the bombarded surfaces was determined by measuring the contact angle for distilled water. The obtained results showed that the ion bombardment induced hydrogen release increases with the increasing ion fluence. An important effect observed, was the rapid oxidation of samples, which occurs after exposure of bombarded samples to air. These effects resulted in important modifications of the surface properties of bombarded material such as change of friction coefficient, hardness and improved wettability.

Sign in / Sign up

Export Citation Format

Share Document