Recent Progress in AlGaN/GaN Based Optoelectronic Devices

1995 ◽  
Vol 395 ◽  
Author(s):  
M. A. Khan ◽  
Q. Chen ◽  
C. J. Sun ◽  
J. W. Yang ◽  
M. S. Shur
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Material System ◽  
Light Emitting ◽  
Ultraviolet Detectors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

ABSTRACTWe review our recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.

High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (35) ◽  
pp. 18371-18378 ◽  
Author(s):  
Haikuo Gao ◽  
Jinyu Liu ◽  
Zhengsheng Qin ◽  
Tianyu Wang ◽  
Can Gao ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Light Emitting ◽  
Vertical Field ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic ◽  
Vertical Field Effect

Two kinds of vertical organic optoelectronic devices were constructed based on amorphous organic semiconductors and high device performances were achieved.

Delta-doped AlGaN/GaN Heterostructure Field-Effect Transistors with Incorporation of AlN Epilayers

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Fan ◽  
M. L. Nakarmi ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Electron Density ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Resistivity ◽  
Spacer Layer Thickness ◽  
Delta Doping ◽  
Heterostructure Field Effect Transistors ◽  
Simulation And Experiment ◽  
Gan Heterostructure

ABSTRATCThe simulation and experiment results of delta-doped AlGaN/GaN heterostructure field-effect transistors (HFETs) with the incorporation of highly-resistive AlN epilayer are reported. The high quality AlN epilayer is used as the dislocation filter for the HFET structure growth, and the high resistivity of AlN also removes the parasitic conduction related with the GaN bulk buffer. Delta doping can reduce gate leakage, further more, our simulation and growth results demonstrate that delta-doping in the barrier is more effective than uniform doping scheme to increase the sheet electron density. The influence of spacer layer thickness on the electron mobility and sheet electron density is also presented. The DC characterization of the fabricated devices shows our structure has a very high performance with a maximum current ∼ 1 A/mm.

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