Supersonic Jet Epitaxy: An Improved Method for Nitride Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Peter E. Norris ◽  
Long D. Zhu ◽  
H. Paul Maruska ◽  
Wilson HO ◽  
Scott Ustin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Microwave Plasma ◽  
Supersonic Jet ◽  
Plasma Source ◽  
Improved Method ◽  
High Quality ◽  
Carrier Gas ◽  
Sapphire Substrates ◽  
Supersonic Jet Epitaxy ◽  
Gan Crystal

ABSTRACTGaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600–670°C. A cubic SiC buffer layer was grown onSi(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

2006 ◽  
Vol 352 (23-25) ◽  
pp. 2332-2334 ◽  
Author(s):  
B. Potì ◽  
M.A. Tagliente ◽  
A. Passaseo
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Sapphire Substrates ◽  
Aln Buffer ◽  
Gan Film

Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer

2010 ◽  
Vol 312 (21) ◽  
pp. 3122-3126 ◽  
Author(s):  
Hooyoung Song ◽  
Jooyoung Suh ◽  
Eun Kyu Kim ◽  
Kwang Hyeon Baik ◽  
Sung-Min Hwang
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Sapphire Substrates

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Simple low‐cost microwave plasma source

1986 ◽  
Vol 57 (2) ◽  
pp. 164-166 ◽  
Author(s):  
L. G. Meiners ◽  
D. B. Alford
Keyword(s):  
Microwave Plasma ◽  
Low Cost ◽  
Plasma Source

scholarly journals A Linear Microwave Plasma Source Using a Circular Waveguide Filled with a Relatively High-Permittivity Dielectric: Comparison with a Conventional Quasi-Coaxial Line Waveguide

2021 ◽  
Vol 11 (12) ◽  
pp. 5358
Author(s):  
Ju-Hong Cha ◽  
Sang-Woo Kim ◽  
Ho-Jun Lee
Keyword(s):  
Electron Density ◽  
Microwave Plasma ◽  
Circular Waveguide ◽  
Coaxial Line ◽  
Plasma Source ◽  
Tangential Plane ◽  
High Permittivity ◽  
Deposition Area ◽  
Extended Plasma ◽  
Transverse Electromagnetic

For a conventional linear microwave plasma source (LMPS) with a quasi-coaxial line transverse electromagnetic (TEM) waveguide, a linearly extended plasma is sustained by the surface wave outside the tube. Due to the characteristics of the quasi-coaxial line MPS, it is easy to generate a uniform plasma with radially omnidirectional surfaces, but it is difficult to maximize the electron density in a curved selected region. For the purpose of concentrating the plasma density in the deposition area, a novel LMPS which is suitable for curved structure deposition has been developed and compared with the conventional LMPS. As the shape of a circular waveguide, it is filled with relatively high-permittivity dielectric instead of a quasi-coaxial line waveguide. Microwave power at 2.45 GHz is transferred to the plasma through the continuous cylindrical-slotted line antenna, and the radiated electric field in the radial direction is made almost parallel to the tangential plane of the window surface. This research includes the advanced 3D numerical analysis and compares the results with the experiment. It shows that the electron density in the deposition area is higher than that of the conventional quasi-coaxial line plasma MPS.

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