AlGaInN Quaternary Alloys by MOCVD

1995 ◽  
Vol 395 ◽  
Author(s):  
F.G. Mcintosh ◽  
E. Piner ◽  
K. Boutros ◽  
J.C. Roberts ◽  
Y. He ◽  
...  
Keyword(s):  
Quaternary Alloy ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
Edge Emission ◽  
Lattice Constants ◽  
Mocvd Growth ◽  
Vegard’S Law ◽  
Lattice Matched

ABSTRACTAlGaInN quaternary alloy based devices can cover the emission wavelength from deep UV to red. This Quaternary alloy also offers lattice matched heterostructures for both optical and microwave devices. We will report on the MOCVD growth of AlxGa1−x-yInyN (0<x<0.12), (0<y<0.15) at 750 °C on sapphire substrates, using TMG, EDMIn, TMAl and NH3 precursors. Chemical composition, lattice constants and bandgaps of the grown films were determined by EDS, X-ray diffraction and room temperature PL. Data indicates that the lattice constants can also be deduced using Vegard's law, indicating a solid solution of this alloy. PL showed band edge emission, however emission from deep levels was also observed. Optimized growth conditions and heterostructures using this quaternary alloy will be presented.

scholarly journals Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

1996 ◽  
Vol 1 ◽  
Author(s):  
E. L. Piner ◽  
F. G. McIntosh ◽  
J. C. Roberts ◽  
M. E. Aumer ◽  
V. A. Joshkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Band Edge Emission ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Double Crystal ◽  
Lattice Constants ◽  
Mocvd Reactor ◽  
Vegard’S Law ◽  
Lattice Matched

High quality InGaN films have led to the development of LEDs and blue lasers. The quaternary AlInGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report on such films grown on (0001) sapphire substrates in an atmospheric pressure MOCVD reactor at 750-800°C. The ternary films have a composition of up to 40% InN and the quaternary films were grown in the composition range of 0 to 20% AlN and 0 to 20% InN. The quaternary compositions studied by EDS and the lattice constants from double crystal XRD followed Vegard's law indicating solid solubility for the range studied. Room temperature PL is dominated by band edge emission for InGaN and AlInGaN, at low AlN%. Higher AlN alloys of AlInGaN had PL dominated by deep levels. AlInGaN/InGaN and AlGaN/InGaN heterostructures were grown with abrupt interfaces. We emphasize the most important growth parameters for the growth of high quality ternary and quaternary thin films. The structural, electrical and optical properties of these In-based ternary and quaternary films and their lattice matched and strained heterostructures will also be presented.

MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP

1997 ◽  
Vol 482 ◽  
Author(s):  
Goshi Biwa ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Yasuhiro Shiraki
Keyword(s):  
Quaternary Alloy ◽  
Semiconductor Films ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Lattice Matching ◽  
Movpe Growth ◽  
Superior Surface ◽  
Lattice Matched

AbstractGaP1-x-yAsyNx. (x ∼,2.3%, 0< y <19%) quaternary alloy semiconductor films on GaP substrates have been successfully grown by metalorganic vapor phase epitaxy (MOVPE). With the fixed supplies of trimethylgallium(TMG), AsH3 and dimethylhydrazine(DMHy) during the growth, the As concentration in the solid increased with increasing AsH3 supply, while the N concentration was almost unaffected. It has been demonstrated that the crystalline quality of the alloy films is much improved with the close lattice-matching to the GaP substrate, giving a superior surface morphology without any cross-hatches, a much narrower x-ray diffraction linewidth, and a significantly higher photoluminescence(PL) intensity.

Growth of High Quality InGaN Films by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. McIntosh ◽  
K. S. Boutros ◽  
S. M. Bedair ◽  
M. Moussa ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Visible Spectrum ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Double Heterostructures ◽  
High Vapor ◽  
Line Widths

ABSTRACTInGaN based optical devices can cover from the violet through orange regions of the visible spectrum. Difficulties in the growth of this alloy, which have impeded its applications, include problems such as the high vapor pressure of In, weak In-N bonds and lack of sufficient nitrogen during growth. We report on the MOCVD growth of InxGa1−xN (0 < x < 0.4) on sapphire substrates in the 750 - 800 °C temperature range. X-ray diffraction data show full width at half maximum line widths as narrow as 250 arcsec for low values of x, while films with higher lnN% exhibit broader line widths. Room temperature photoluminescence spectra exhibit band edge emission, with emission from deep levels increasing with x. Preliminary investigations of AlGaN/lnGaN/AlGaN double heterostructures have been conducted.

Growth and Characterization of AllnGaN/InGaN Heterostructures

1996 ◽  
Vol 423 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. Mcintosh ◽  
M. Aumer ◽  
V. Joshkin ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
High Performance ◽  
Visible Spectrum ◽  
Growth Conditions ◽  
Light Emitting ◽  
Mocvd Growth ◽  
Near Ultraviolet ◽  
Active Layers ◽  
Double Heterostructures ◽  
Lattice Matched

AbstractThe emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

scholarly journals Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Growth and Characterization of BxGal-xN on 6H-SiC (0001) by MOVPE

1998 ◽  
Vol 537 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

AbstractBoron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGal-xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGal-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGal-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGal-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Lattice constant variation in GaN:Si layers grown by HVPE

2002 ◽  
Vol 743 ◽  
Author(s):  
A. Usikov ◽  
O. V. Kovalenkov ◽  
M. M. Mastro ◽  
D. V. Tsvetkov ◽  
A. I. Pechnikov ◽  
...  
Keyword(s):  
Defect Formation ◽  
Strain Relaxation ◽  
Growth Conditions ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Proper Selection ◽  
X Ray ◽  
Lattice Constants ◽  
Si Doping ◽  
Selection Of

ABSTRACTThe structural, optical, and electrical properties of HVPE-grown GaN-on-sapphire templates were studied. The c and a lattice constants of the GaN layers were measured by x-ray diffraction. It was observed that the c and a lattice constants vary non-monotonically with Si-doping. The proper selection of Si-doping level and growth conditions resulted in controllable strain relaxation, and thus, influenced defect formation in GaN-on-sapphire templates. It was also observed that HVPE homoepitaxial GaN layers grown on the templates have better crystal quality and surface morphology than the initial templates.

Al2O3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

2009 ◽  
Vol 1201 ◽  
Author(s):  
Nola Li ◽  
Shen-Jie Wang ◽  
William E. Fenwick ◽  
Andrew Melton ◽  
Chung-Lung Huang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
Shallow Donor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
20 Nm ◽  
Related Level

AbstractGaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/ZnO substrates. Room temperature photoluminescence (RT-PL) showed the red shift of the GaN near band-edge emission, which might be from oxygen incorporation forming a shallow donor-related level in GaN. HRXRD measurements revealed that (0002) InGaN layers were also successfully grown on 20nm Al2O3/ZnO substrates. In addition, thick InGaN layers (∼200-300nm) were successfully grown on Al2O3/ZnO and bare ZnO substrates. These results are significant as previous studies showed decomposition of the layer at InGaN thicknesses of 100nm or less.

Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2

1996 ◽  
Vol 423 ◽  
Author(s):  
Heon Lee ◽  
Masaaki Yuri ◽  
Tetsuzo Ueda ◽  
James S. Harris
Keyword(s):  
Gas Phase ◽  
Gas Flow ◽  
Chloride Transport ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
Growth Characterization ◽  
Diffraction Peaks

AbstractThermodynamic calculations were carried out on chloride transport vapor phase epitaxy of GaN using GaCl3/N2 and NH3/N2. At typical growth temperature and gas flow rates, both GaN formation and gas phase etching reactions of GaN are thermodynamically favored. Under thermodynamic equilibrium, most ammonia should decompose to nitrogen and hydrogen gases and gas phase etching of GaN occurs by HCI. From experimental measurements, less than 10% of the incoming ammonia decomposes and under this condition, GaN formation from GaCl3 /N2, and NH3 /N2 is thermodynamically favored. Higher V/III ratios give a larger driving force for GaN fromation. These calculations match our experimental results. Experimentally, we have optimized the growth conditions of GaN. High crystalline quality thick GaN films (10 ˜15μm) were grown on c-Al2O3. The GaN films show band edge emission dominated PL at both room temperature and 77 K. Only one set of diffraction peaks from (1012) planes with 60° spacing in the φ-scan of X-ray diffraction are observed. This indicates that the GaN films grown on c-Al2O3 are single crystalline. Typical growth rates were about 10 ˜ I5μm/hr and typical Hall mobility values of GaN films were in the range of 3 to 40 cm2/Vsec.

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

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