MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP

1997 ◽  
Vol 482 ◽  
Author(s):  
Goshi Biwa ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Yasuhiro Shiraki
Keyword(s):  
Quaternary Alloy ◽  
Semiconductor Films ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Lattice Matching ◽  
Movpe Growth ◽  
Superior Surface ◽  
Lattice Matched

AbstractGaP1-x-yAsyNx. (x ∼,2.3%, 0< y <19%) quaternary alloy semiconductor films on GaP substrates have been successfully grown by metalorganic vapor phase epitaxy (MOVPE). With the fixed supplies of trimethylgallium(TMG), AsH3 and dimethylhydrazine(DMHy) during the growth, the As concentration in the solid increased with increasing AsH3 supply, while the N concentration was almost unaffected. It has been demonstrated that the crystalline quality of the alloy films is much improved with the close lattice-matching to the GaP substrate, giving a superior surface morphology without any cross-hatches, a much narrower x-ray diffraction linewidth, and a significantly higher photoluminescence(PL) intensity.

MBE-Grown GaNAsBi Matched to GaAs with 1.3-μm Emission Wavelength

2004 ◽  
Vol 829 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Wei Huang ◽  
Kunishige Oe
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Peak Energy ◽  
First Time ◽  
Lattice Matched

ABSTRACTGaNyAs1-x-yBix alloy lattice-matched to GaAs has been grown by molecular beam epitaxy (MBE). The lattice-matching of GaNyAs1-x-yBix to GaAs was investigated by X-ray diffraction measurements on a series of GaNyAs1-x-yBix with various GaN molar fractions. GaNyAs1-x-yBix lattice-matched to GaAs was obtained, which was confirmed by its diffraction peak overlapped with the peak of GaAs. Photoluminescence (PL) of 1.3 μm was observed from GaNyAs1-x-yBix epilayer matched to GaAs at room temperature. The temperature coefficient of the PL peak energy in a temperature range 150–300K for GaNyAs1-x-yBix was 1/3 of InGaAsP with a bandgap corresponding to 1.3-μm emission. Both lattice-matching to GaAs and bandgap adjustment to 1.3-μm waveband were achieved for GaNyAs1-x-yBix for the first time. This alloy will lead to the fabrication of laser diodes with an emission of temperature insensitive wavelength.

The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1−xSnxSe1−yTey Quaternary Alloys

1993 ◽  
Vol 311 ◽  
Author(s):  
Patrick J. Mccann
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Strain Energy ◽  
Lattice Strain ◽  
Chemical Potential ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Lattice Matched

ABSTRACTIV-VI semiconductor Pb1−xsSnxsSe1−ysTeys quaternary alloys were grown on (111) BaF2 by liquid phase epitaxy (LPE). X-ray diffraction analysis shows that liquid (Pb1−x1Snx1)0.99(Se1−y1Tey1)0.01 solutions produce alloys lattice-matched with the substrate wheny1 = 60%, 58%, and 57%, and x1 = 20%, 40%, and 60%, respectively. These data suggest that the chemical potential of tellurium in the Pb1−xsSnxsSe1−ysTeys solid solution decreases as tin and tellurium concentrations increase. It is argued that this reduction is due to decreasing strain energy driven segregation of tellurium from the solid to the liquid as the tin concentration increases.

AlGaInN Quaternary Alloys by MOCVD

1995 ◽  
Vol 395 ◽  
Author(s):  
F.G. Mcintosh ◽  
E. Piner ◽  
K. Boutros ◽  
J.C. Roberts ◽  
Y. He ◽  
...  
Keyword(s):  
Quaternary Alloy ◽  
Growth Conditions ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
Edge Emission ◽  
Lattice Constants ◽  
Mocvd Growth ◽  
Vegard’S Law ◽  
Lattice Matched

ABSTRACTAlGaInN quaternary alloy based devices can cover the emission wavelength from deep UV to red. This Quaternary alloy also offers lattice matched heterostructures for both optical and microwave devices. We will report on the MOCVD growth of AlxGa1−x-yInyN (0<x<0.12), (0<y<0.15) at 750 °C on sapphire substrates, using TMG, EDMIn, TMAl and NH3 precursors. Chemical composition, lattice constants and bandgaps of the grown films were determined by EDS, X-ray diffraction and room temperature PL. Data indicates that the lattice constants can also be deduced using Vegard's law, indicating a solid solution of this alloy. PL showed band edge emission, however emission from deep levels was also observed. Optimized growth conditions and heterostructures using this quaternary alloy will be presented.

scholarly journals X-ray diffraction analysis of kaolin M1 and M2 via the Williamson–Hall and Warren–Averbach methods

2021 ◽  
pp. 174751982098472
Author(s):  
Lalmi Khier ◽  
Lakel Abdelghani ◽  
Belahssen Okba ◽  
Djamel Maouche ◽  
Lakel Said
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Low Temperature ◽  
Diffraction Analysis ◽  
Mechanical Resistance ◽  
X Ray Diffraction ◽  
Integral Breadth ◽  
X Ray ◽  
Mullite Phase

Kaolin M1 and M2 studied by X-ray diffraction focus on the mullite phase, which is the main phase present in both products. The Williamson–Hall and Warren–Averbach methods for determining the crystallite size and microstrains of integral breadth β are calculated by the FullProf program. The integral breadth ( β) is a mixture resulting from the microstrains and size effect, so this should be taken into account during the calculation. The Williamson–Hall chart determines whether the sample is affected by grain size or microstrain. It appears very clearly that the principal phase of the various sintered kaolins, mullite, is free from internal microstrains. It is the case of the mixtures fritted at low temperature (1200 °C) during 1 h and also the case of the mixtures of the type chamotte cooks with 1350 °C during very long times (several weeks). This result is very significant as it gives an element of explanation to a very significant quality of mullite: its mechanical resistance during uses at high temperature remains.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

scholarly journals High temperature structural study of decagonal Al-Cu-Rh quasicrystal.

2014 ◽  
Vol 70 (a1) ◽  
pp. C94-C94
Author(s):  
Pawel Kuczera ◽  
Walter Steurer
Keyword(s):  
Structural Changes ◽  
Configurational Entropy ◽  
Lattice Vibrations ◽  
X Ray Diffraction ◽  
Stabilization Mechanism ◽  
X Ray ◽  
Comparative Structure ◽  
The Stability

The structure of d(ecagonal)-Al-Cu-Rh has been studied as a function of temperature by in-situ single-crystal X-ray diffraction in order to contribute to the discussion on energy or entropy stabilization of quasicrystals (QC) [1]. The experiments were performed at 293 K, 1223 K, 1153 K, 1083 K, and 1013 K. A common subset of 1460 unique reflections was used for the comparative structure refinements at each temperature. The results obtained for the HT structure refinements of d-Al-Cu-Rh QC seem to contradict a pure phasonic-entropy-based stabilization mechanism [2] for this QC. The trends observed for the ln func(I(T1 )/I(T2 )) vs.|k⊥ |^2 plots indicate that the best on-average quasiperiodic order exists between 1083 K and 1153 K, however, what that actually means is unclear. It could indicate towards a small phasonic contribution to entropy, but such contribution is not seen in the structure refinements. A rough estimation of the hypothetic phason instability temperature shows that it would be kinetically inaccessible and thus the phase transition to a 12 Å low T structure (at ~800 K) is most likely not phason-driven. Except for the obvious increase in the amplitude of the thermal motion, no other significant structural changes, in particular no sources of additional phason-related configurational entropy, were found. All structures are refined to very similar R-values, which proves that the quality of the refinement at each temperature is the same. This suggests, that concerning the stability factors, some QCs could be similar to other HT complex intermetallic phases. The experimental results clearly show that at least the ~4 Å structure of d-Al-Cu-Rh is a HT phase therefore entropy plays an important role in its stabilisation mechanism lowering the free energy. However, the main source of this entropy is probably not related to phason flips, but rather to lattice vibrations, occupational disorder unrelated to phason flips like split positions along the periodic axis.

Crystalline and Electrical Properties of Ferroelectric Silver Niobate-tantalate thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Jung-Hyuk Koh ◽  
S.I. Khartsev ◽  
Alex Grishin ◽  
Vladimir Petrovsky
Keyword(s):  
Temperature Stability ◽  
Frequency Dispersion ◽  
Processing Temperature ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Ferroelectric State ◽  
X Ray ◽  
Ferroelectric Hysteresis ◽  
First Time

AbstractFor the first time AgTa0.38Nb0.62O3 (ATN) films have been grown on the La0.7Sr0.3CoO3 (LSCO)/LaAlO3 single crystal as well as onto Pt80Ir20 (PtIr) polycrystalline substrate. Comprehensive X-ray diffraction analyses reveal epitaxial quality of ATN and LSCO films on the LaAlO3(001) substrate, while ATN/PtIr films have been found to be (001) preferentially oriented. Dielectric spectroscopy performed for ATN films and bulk ceramics in a wide temperature range 77 to 420 K shows the structural monoclinic M1-to-monoclinic M2 phase transition occurs in films at the temperature 60 °C lower than in ceramics. The tracing of the ferroelectric hysteresis P-E loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields remnant polarization of 0.4 μC/cm2 @ 77 K. Weak frequency dispersion, high temperature stability of dielectric properties as well as low processing temperature of 550 °C make ATN films to be attractive for various applications.

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Development of Ternary Concrete Utilizing Agricultural Waste Material

2022 ◽  
Author(s):  
Sunita Kumari ◽  
Dhirendra Singhal ◽  
Rinku Walia ◽  
Ajay Rathee
Keyword(s):  
Rice Husk ◽  
Rice Husk Ash ◽  
Agricultural Waste ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Concrete Mix ◽  
Maize Cob

Abstract The present project proposes to utilize rice husk and maize cob husk ash in the cement to mitigate the adverse impact of cement on environment and to enhance the disposal of waste in a sustainable manner. Ternary concrete / MR concrete was prepared by using rise husk and maize cob ash with cement. For the present project, five concrete mixes MR-0 (Control mix), MR-1 (Rice husk ash 10% and MR-2.5%), MR-2 (Rice husk ash 10% and MR-5%), MR-3 (Rice husk ash 10% and MR-2.5%), MR-4 (Rice husk ash 10% and MR-2.5%) were prepared. M35 concrete mix was designed as per IS 10262:2009 for low slump values 0-25mm. The purpose is to find the optimum replacement level of cement in M35 grade ternary concrete for I – Shaped paver blocks.In order to study the effects of these additions, micro-structural and structural properties test of concretes have been conducted. The crystalline properties of control mix and modified concrete are analyzed by Fourier Transform Infrared Spectroscope (FTIR), Scanning Electron Microscopy (SEM), and X-Ray Diffraction (XRD). The results indicated that 10% Rice husk ash and 5% maize cob ash replaced with cement produce a desirable quality of ternary concrete mix having good compressive strength. The results of SEM analysis indicated that the morphology of both concrete were different, showing porous structure at 7 days age and become unsymmetrical with the addition of ashes. After 28 day age, the control mix contained more quantity of ettringite and became denser than ternary concrete. XRD analysis revealed the presence of portlandite in large quantity in controlled mix concrete while MR concrete had the partially hydrated particle of alite.

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