Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE

1995 ◽  
Vol 395 ◽  
Author(s):  
T.D. Moustakas
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Stacking Faults ◽  
Surface Roughening ◽  
Layer By Layer ◽  
Mg Doping ◽  
Nucleation Sites ◽  
Layer Mode ◽  
Mg Doped

ABSTRACTThe epitaxial growth of wurtzite and zincblende GaN on (0001) sapphire and (001) Si by the Electron Cyclotron Resonance-assited Molecular Beam Epitaxy (ECR-MBE) method is discussed. We show that films can be grown in the layer-by-layer mode when growth occurs in Ga-rich regime. Surface roughening mechanisms are addressed. The similarity of photoluminescence data of Mg-doped wurtzite GaN films with those of undoped zincblende GaN films suggests that Mg doping facilitates the formation of stacking faults in the wurtzite structure which are nucleation sites for zincblende domains.

Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy

1995 ◽  
Vol 34 (Part 2, No. 2B) ◽  
pp. L236-L239 ◽  
Author(s):  
Sung Hwan Cho ◽  
Hirosi Sakamoto ◽  
Katsuhiro Akimoto ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron

Observation of Surfactant Properties of Thallium in the Epitaxial Growth of Indium Arsenide on Gallium Arsenide

1999 ◽  
Vol 570 ◽  
Author(s):  
D.F. Storm ◽  
M.D. Lange
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Epitaxial Growth ◽  
Indium Arsenide ◽  
Lattice Mismatch ◽  
Layer By Layer ◽  
Surfactant Properties ◽  
Large Lattice ◽  
Layer Mode ◽  
Large Lattice Mismatch

ABSTRACTBecause of the large lattice mismatch between InAs and GaAs, the growth of the former on the (001) surface of the latter undergoes a well-known transition from a layer-by-layer mode to an island mode at an equivalent coverage of 1–2 monolayers (ML). We have observed a suppression of this transition when growth proceeds under a simultaneous thallium flux. The thallium is not significantly incorporated into the InAs layer; however, approximately I ML may remain at the interface. The effect of the thallium on the electronic properties of the InAs is investigated.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

scholarly journals Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5595-5599 ◽  
Author(s):  
Masaki Nakano ◽  
Yue Wang ◽  
Yuta Kashiwabara ◽  
Hideki Matsuoka ◽  
Yoshihiro Iwasa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Layer By Layer

Epitaxial growth of cubic GaN and AlN on Si(001)

1996 ◽  
Vol 1 ◽  
Author(s):  
A. Barski ◽  
U. Rössner ◽  
J. L. Rouviere ◽  
M. Arlery
Keyword(s):  
Thermal Treatment ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Stacking Faults ◽  
Subsequent Growth ◽  
Cubic Form ◽  
Cubic Gan ◽  
Very High ◽  
Resonance Plasma

Thermal treatment under propane at 1300-1400 °C has been used to prepare Silicon (001) wafers for subsequent growth of cubic GaN and AlN by Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECRMBE). Thermal treatment of Silicon wafers under propane, used in this experiment, produced a very thin (40 Å) layer of cubic SiC on the Silicon (001) surface. Despite an extremely low thickness of as-produced SiC layer, high quality cubic GaN has been successfully grown. The cubic form of AlN grown on the SiC(40Å)/Si(001) surface has also been observed despite a very high density of stacking faults.

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