scholarly journals Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5595-5599 ◽  
Author(s):  
Masaki Nakano ◽  
Yue Wang ◽  
Yuta Kashiwabara ◽  
Hideki Matsuoka ◽  
Yoshihiro Iwasa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Layer By Layer

Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy

2011 ◽  
Vol 29 (1) ◽  
pp. 01A801 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Jean-Pierre Locquet ◽  
Jin Won Seo ◽  
Christel Dieker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Kazushi Nakano ◽  
Takao Miyajima ◽  
Katsuhiro Akimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control

1989 ◽  
Vol 28 (Part 2, No. 10) ◽  
pp. L1809-L1811 ◽  
Author(s):  
Yoshimi Nakayama ◽  
Ichiro Tsukada ◽  
Atsutaka Maeda ◽  
Kunimitsu Uchinokura
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by molecular beam epitaxy

2020 ◽  
Vol 116 (12) ◽  
pp. 122102 ◽  
Author(s):  
Jiaming Li ◽  
Chenjia Tang ◽  
Peng Du ◽  
Yilan Jiang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Lattice Matched

scholarly journals Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

2013 ◽  
Vol 102 (6) ◽  
pp. 063106 ◽  
Author(s):  
Zhi-Ming Liao ◽  
Zhi-Gang Chen ◽  
Zhen-Yu Lu ◽  
Hong-Yi Xu ◽  
Ya-Nan Guo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam
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