Low‐temperature GaAs epitaxial growth using electron‐cyclotron resonance/metalorganic‐molecular‐beam epitaxy

1988 ◽  
Vol 64 (5) ◽  
pp. 2778-2780 ◽  
Author(s):  
Yoshimitsu Tanaka ◽  
Yasuhiro Kunitsugu ◽  
Ikuo Suemune ◽  
Yoshiaki Honda ◽  
Yasuo Kan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Low Temperature Gaas

Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy

1995 ◽  
Vol 34 (Part 2, No. 2B) ◽  
pp. L236-L239 ◽  
Author(s):  
Sung Hwan Cho ◽  
Hirosi Sakamoto ◽  
Katsuhiro Akimoto ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron

Structural Characterization of GaN Grown By Electron Cyclotron Resonance-Metalorganic Molecular Beam Epitaxy (ECR-MOMBE)

1994 ◽  
Vol 339 ◽  
Author(s):  
S. Bharatan ◽  
K. S. Jones ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
F. Ren
Keyword(s):  
Electron Microscopy ◽  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTElectron cyclotron resonance-metalorganic molecular beam epitaxy (ECR-MOMBE) has been used to deposit cubic and hexagonal gallium nitride (GaN) on various substrates, namely GaAs, ZnO and Al2O3. This paper will report on the effect of the growth rate of the GaN layer on the surface morphology, as analyzed using scanning electron microscopy (SEM). Structural characterization of this material was conducted using cross-sectional transmission electron microscopy (XTEM) and x-ray diffraction. Conditions such as pre-deposition annealing, growth rate and growth temperature are critical in determining the phase and crystallinity of the deposited layers. These parameters were optimized to obtain the cubic GaN phase on GaAs substrates and single crystal wurtzitic GaN on ZnO and Al2O3 substrates.

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