Properties of Point-Defects in Si for Process Modeling

1995 ◽  
Vol 389 ◽  
Author(s):  
H.-J. Gossmann ◽  
C. S. Rafferty ◽  
P. A. Stolk ◽  
D. J. Eaglesham ◽  
G. H. Gilmer ◽  
...  
Keyword(s):  
Point Defects ◽  
Quantitative Information ◽  
Recombination Coefficient ◽  
Native Point Defects ◽  
Front End ◽  
Atomistic Calculations ◽  
Equilibrium Concentrations ◽  
Dopant Atoms ◽  
Physical Phenomena ◽  
Impurity Profiles

ABSTRACTThe development of future Si device technologies will rely extensively on modeling, requiring truly predictive tools. Here we focus on the front-end processes, during which ion-implantation and annealing create 3-D impurity profiles that determine crucial electrical device parameters. The final configuration is the result of a complex interaction of dopant atoms with Si self-interstitials and vacancies, which themselves interact with each other as well as with the implantation-induced damage and interfaces. Predictive modeling requires for all these processes a solid understanding of the physical phenomena as well as accurate quantitative information. Si self-interstitials and vacancies are not observable directly in an experiment, but only via their interactions with some other physical quantity of the sample. We review our work employing dopant atoms in δ-doping superlattices (δ-DSL) that yield directly the time averaged depth profiles of Si native point defects during a particular processing sequence. This approach is uniquely suited for giving insights into the interplay of point defects in Si, providing crosschecks for atomistic calculations as well as parameters for process simulators. We describe experiments to extract interstitial and vacancy parameters and discuss the influence of intrinsic and extrinsic interstitial traps, as well as of the annealing environment, on the native point defect population. The latter allows to place certain bounds on the interstitial vacancy recombination coefficient as well as the ratio of interstitial and vacancy equilibrium concentrations.

Stability and mobility of native point defects in AlH3

2011 ◽  
Vol 509 ◽  
pp. S658-S661 ◽  
Author(s):  
Lars Ismer ◽  
Anderson Janotti ◽  
Chris G. Van de Walle
Keyword(s):  
Point Defects ◽  
Native Point Defects

Hg1-xCdxTe: Defect Structure Overview

1990 ◽  
Vol 216 ◽  
Author(s):  
M.A. Berding ◽  
A. Sher ◽  
A.-B. Chen
Keyword(s):  
Point Defects ◽  
Defect Structure ◽  
Defect Formation ◽  
Activation Energies ◽  
Mass Action ◽  
Native Defect ◽  
Native Point Defects ◽  
Vacancy Migration ◽  
Formation Energies ◽  
Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Room Temperature ◽  
Vanadium Content ◽  
Mapping Technique ◽  
Native Defect ◽  
Room Temperature Photoluminescence ◽  
Native Point Defects ◽  
Pl Mapping ◽  
Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

The REPAS Study: Reliability Evaluation of Passive Safety Systems

2002 ◽  
Author(s):  
M. E. Ricotti ◽  
F. Bianchi ◽  
L. Burgazzi ◽  
F. D’Auria ◽  
G. Galassi
Keyword(s):  
Initial Conditions ◽  
Natural Circulation ◽  
Quantitative Information ◽  
External Input ◽  
Passive System ◽  
Two Phase ◽  
Passive Safety Systems ◽  
Safety Systems ◽  
Physical Laws ◽  
Physical Phenomena

The strategy of approach to the problem moves from the consideration that a passive system should be theoretically more reliable than an active one. In fact it does not need any external input or energy to operate and it relies only upon natural physical laws (e.g. gravity, natural circulation, internally stored energy, etc.) and/or “intelligent” use of the energy inherently available in the system (e.g. chemical reaction, decay heat, etc.). Nevertheless the passive system may fail its mission not only as a consequence of classical mechanical failure of components, but also for deviation from the expected behaviour, due to physical phenomena mainly related to thermalhydraulics or due to different boundary and initial conditions. The main sources of physical failure are identified and a probability of occurrence is assigned. The reliability analysis is performed on a passive system which operates in two-phase, natural circulation. The selected system is a loop including a heat source and a heat sink where the condensation occurs. The system behavior under different configurations has been simulated via best-estimate code (Relap5 mod3.2). The results are shown and can be treated in such a way to give qualitative and quantitative information on the system reliability. Main routes of development of the methodology are also depicted.

Pts-Oi Complex Formation in Platinum Diffused Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Wilfried Vervisch ◽  
Laurent Ventura ◽  
Bernard Pichaud ◽  
Gérard Ducreux ◽  
André Lhorte
Keyword(s):  
Thermal Treatment ◽  
Complex Formation ◽  
Cooling Rate ◽  
Point Defects ◽  
Diffusion Processes ◽  
Silicon Wafers ◽  
Doping Behaviour ◽  
Simulation Results ◽  
Dopant Atoms ◽  
P Type

AbstractWhen platinum is diffused at temperatures higher than 900°C in Cz or FZ low doped n-type silicon samples, which are then cooled slowly in the range [1-10]°C/min, a p-type doping leading to the formation of a pn junction can be observed by spreading resistance measurement. The lower the cooling rate, the deeper the junction is. This junction disappears after a second thermal treatment finishing with a quenching step. A platinum related complex formation is considered to explain this reversible doping behaviour. Different possible interactions between platinum and other impurities such as dopant atoms, intrinsic point defects, and common residual impurities (C, Oi, transition metallic atoms) are studied here. Experimental results from Pt diffusion processes in different qualities of silicon wafers, and simulation results, lead to the conclusion that the platinum related p-type doping effect is due to the formation of a Pts-Oi complex.

Native point defects on hydrogen-passivated 4H–SiC (0001) surface and the effects on metal adsorptions

2017 ◽  
Vol 147 (2) ◽  
pp. 024707 ◽  
Author(s):  
Tingting Wang ◽  
Guiwu Liu ◽  
Yuanyuan Li ◽  
Haigang Hou ◽  
Ziwei Xu ◽  
...  
Keyword(s):  
Point Defects ◽  
Native Point Defects
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