Ion-Assisted Pulsed Laser Deposition of BN Films

1995 ◽  
Vol 388 ◽  
Author(s):  
G. L. Doll ◽  
D. C. Chance ◽  
L. Salamanca-Riba
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Auger Electron ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Nitrogen Ion ◽  
Boron Nitride Films

AbstractBoron nitride films grown by ion-assisted pulsed laser deposition have been characterized by infrared absorption, auger electron pectroscopy, and transmission electron microscopy. Elemental bonding and the crystallinity of BN films grown in three nitrogen ion energy regimes:high (2500 eV), low (700 eV), and without ions (0 eV) are examined, and the results interpreted within the framework of a compressive stress mechanism for cBN film growth.

Growth of TiN/AlN Superlattice by Pulsed Laser Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
H. Wang ◽  
A. Gupta ◽  
Ashutosh Tiwari ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Internal Stresses ◽  
Layer By Layer ◽  
Special Configuration ◽  
Transmission Electron

ABSTRACTTiN-AlN binary-components have attracted a lot of interests in coatings of high speed cutting tools, due to their higher oxidation resistance, higher hardness, lower internal stresses and better adhesion. Especially, nanometer-scale multilayer structures of AlN/TiN show superior structural and mechanical properties due to their tremendous interface area and become one of the promising candidates for superhard coatings. Here we present a novel method to grow highly aligned TiN/AlN superlattice by pulsed laser deposition. In this method TiN and AlN targets are arranged in a special configuration that they can be ablated in sequence, giving alternate layer by layer growth of TiN(1nm)/AlN(4nm). X-ray diffraction and transmission electron microscopy (TEM) analysis showed the structure to be cubic for both TiN and AlN in the nanoscale multilayers. Microstructure and uniformity for the superlattice structure were studied by TEM and Scanning transmission electron microscopy with Z-contrast (STEM). Nanoindentation results indicated a higher hardness for this new structure than pure AlN and rule-of-mixtures value. Four point probe electrical resistivity measurements showed overall insulating behavior.

scholarly journals Scanning and Transmission Electron Microscopy Studies of Alkali Halides Films Grown by Pulsed Laser Deposition

2013 ◽  
Vol 19 (S2) ◽  
pp. 1588-1589
Author(s):  
D.R. Acosta ◽  
E. Mejia ◽  
C. Sanchez ◽  
J. Martinez ◽  
C. Magana
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Alkali Halides ◽  
Laser Deposition ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

1995 ◽  
Vol 410 ◽  
Author(s):  
J. E. Cosgrove ◽  
P. A. Rosenthal ◽  
D. Hamblen ◽  
D. B. Fenner ◽  
C. Yang
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Auger Microprobe ◽  
Substrate Types

ABSTRACTWe have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

A Simple and Effective Route to Annihilate Defects in Nanocrystalline SnO2 Thin Films Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 1026 ◽  
Author(s):  
Zhiwen Chen ◽  
C. M. L. Wu ◽  
C. H. Shek ◽  
J. K. L. Lai ◽  
Z. Jiao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Sno2 Thin Films

AbstractThe microstructural defects of nanocrystalline SnO2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO2 thin films could be significantly reduced by annealing the SnO2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that stacking faults and twins were annihilated upon annealing. In particular, the edges of the SnO2 nanoparticles demonstrated perfect lattices free of defects after annealing. Raman spectra also confirmed that annealing the specimen was almost defect-free. By using thermal annealing, defect-free nanocrystalline SnO2 thin films can be prepared in a simple and practical way, which holds promise for applications as transparent electrodes and solid-state gas sensors.

Nitrogen ion beam-assisted pulsed laser deposition of boron nitride films

1998 ◽  
Vol 83 (6) ◽  
pp. 3398-3403 ◽  
Author(s):  
B. Angleraud ◽  
M. Cahoreau ◽  
I. Jauberteau ◽  
J. Aubreton ◽  
A. Catherinot
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion ◽  
Boron Nitride Films

Epitaxial Growth of Magnetic Nickel Nanodots by Pulsed Laser Deposition

2002 ◽  
Vol 755 ◽  
Author(s):  
H. Zhou ◽  
D. Kumar ◽  
A. Kvit ◽  
A. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Orientation Relationship ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Transmission Electron

ABSTRACTEpitaxial nickel magnetic nanodots were obtained by pulsed laser deposition (PLD) technique on Si (100) substrate using epitaxial TiN film as the template. Characterization methods include: high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) Z-contrast imaging, selected area electron diffraction (SAD), and X-ray diffraction (XRD) techniques. The results showed that as long as no coalescence between neighboring dots occurred, the dots are all single crystal. The predominant orientation relationship observed is Ni (100) // TiN (100) // Si (100), the so-called “cube-on-cube” orientation relationship. Other rotational orientation relationships, where the nickel crystal rotates an angle with respect to TiN (011) directions, were also observed. The dots are in faceted island shapes, bounded by (111) and (001) facets. The actual size of dots varies from a few nanometers to tens of nanometers, depending on the deposition time and temperature. The shape of a certain dot was found to be closely related to its epitaxial orientation. Effects of deposition temperature and template crystalline quality were studied. It was found that deposition temperature in a certain range does not have much influence on the epitaxial orientation of dots, while the crystalline quality of titanium nitride (the underlying template) is primarily responsible for the orientation variation. At the optimum condition, samples with a large fraction of cube-on-cube orientated nickel dots could be obtained in a rather wide temperature range (up to 250 °C), as evidenced by the strong reflections from both SAD and XRD. Samples containing more than one layer of nickel and titanium nitride matrix were also studied. The results showed that the degree of orientation perfection could be greatly improved by decreasing the size of dots.

Synthesis and Characterization of Metal-Ceramic Thin Film Nanocomposites With Improved Mechanical Properties

2002 ◽  
Author(s):  
D. Kumar ◽  
N. Sudhir ◽  
S. Yarmolenko ◽  
Q. Wei ◽  
J. Sankar ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Thin Film Composites ◽  
Film Composites

Thin films composite materials consisting of metallic nanocrystals embedded in an insulator host have been synthesized using alternating-target pulsed laser deposition of Fe/Ni and Al2O3. The evaluation of structural quality of the thin film composites using high resolution transmission electron microscopy and scanning transmission electron microscopy with atomic number contrast has revealed the formation of a biphase system with thermodynamically driven segregation of Ni and alumina during pulsed laser deposition. The best hardness values of the thin film composites, measured using nanoindentation techniques, was found to 20–30% larger than pure alumina films fabricated under identical conditions. The improvement in values of hardness of Al2O3 thin films by embedding metal nanocrystals is related to the evolution of a microstructure which efficiently hinders the manipulation and movement of dislocation and the growth of microcracks, which in turn, is achieved by grain boundary hardening.

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