Nitrogen ion beam-assisted pulsed laser deposition of boron nitride films

1998 ◽  
Vol 83 (6) ◽  
pp. 3398-3403 ◽  
Author(s):  
B. Angleraud ◽  
M. Cahoreau ◽  
I. Jauberteau ◽  
J. Aubreton ◽  
A. Catherinot
1994 ◽  
Vol 76 (5) ◽  
pp. 3088-3101 ◽  
Author(s):  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
D. L. Medlin ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  

1993 ◽  
Vol 311 ◽  
Author(s):  
D.D. Medlin ◽  
T.T. Friedmann ◽  
P.P. Mirkarimi ◽  
K.K. Mccarty ◽  
M.M. Mills

ABSTRACTWe present a microstructural study of boron nitride films grown by ion-assisted pulsed laser deposition. Fourier transform infra-red spectroscopy, electron energy loss spectroscopy, and electron diffraction measurements indicate that within the irradiated region of the substrate, the film consists of high fraction of cBN with a small amount of the turbostratic phase; outside of the irradiated region, only the turbostratic phase is detected. Conventional and high resolution electron microscopic observations of the boron nitride microstructure indicate that the cBN is in the form of twinned crystallites, up to 30 nm in diameter. We also observe particulates, formed by the laser pulse, that reduce the yield of cBN in the irradiated regions by shadowing local areas from the ion beam.


1995 ◽  
Vol 388 ◽  
Author(s):  
G. L. Doll ◽  
D. C. Chance ◽  
L. Salamanca-Riba

AbstractBoron nitride films grown by ion-assisted pulsed laser deposition have been characterized by infrared absorption, auger electron pectroscopy, and transmission electron microscopy. Elemental bonding and the crystallinity of BN films grown in three nitrogen ion energy regimes:high (2500 eV), low (700 eV), and without ions (0 eV) are examined, and the results interpreted within the framework of a compressive stress mechanism for cBN film growth.


2007 ◽  
Vol 16 (8) ◽  
pp. 1579-1585 ◽  
Author(s):  
Z.F. Ying ◽  
D. Yu ◽  
H. Ling ◽  
N. Xu ◽  
Y.F. Lu ◽  
...  

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