Extremely Low Temperature Silicon Liquid Phase Epitaxy

1995 ◽  
Vol 386 ◽  
Author(s):  
M. Konuma ◽  
I. Silier ◽  
A. Gutjahr ◽  
E. Bauser ◽  
F. Banhart ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Hydrofluoric Acid ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Extended Defects ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Amorphous Glass ◽  
Substrate Surfaces

ABSTRACTBy liquid phase epitaxy (LPE) we have grown silicon layers on silicon and partially masked silicon at temperatures below 450 °C from Ga and Ga-In solutions. Oxidation of the cleaned silicon substrate surfaces before epitaxial growth has been prevented by a buffered hydrofluoric acid treatment. The epitaxial layers reached a thickness of 7 jim and were free of extended defects.Low growth temperatures make it possible to grow silicon layers also on pre-treated glass substrates. The amorphous glass is first coated with a thin nano-crystalline silicon layer which is deposited by plasma processes from a mixture of SiH4/H2 gas. The grains in the silicon layers grown from Ga solution on glass have reached sizes up to 100 μm.

High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L217-L219 ◽  
Author(s):  
Toru Ujihara ◽  
Kazuo Obara ◽  
Noritaka Usami ◽  
Kozo Fujiwara ◽  
Gen Sazaki ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
High Quality

(Invited) Electrochemical Liquid Phase Epitaxy of Crystalline Silicon Films

2021 ◽  
Vol MA2021-01 (24) ◽  
pp. 930-930
Author(s):  
Stephen Maldonado ◽  
Nathanael Downes
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystalline Silicon ◽  
Silicon Films

Optical properties and Limits of a Large-Area Periodic Nanophotonic Light Trapping Design for Polycrystalline Silicon Thin Film Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 59-64 ◽  
Author(s):  
Daniel Lockau ◽  
Tobias Sontheimer ◽  
Veit Preidel ◽  
Christiane Becker ◽  
Florian Ruske ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Solid Phase ◽  
Light Trapping ◽  
Optical Design ◽  
Silicon Layer ◽  
Electron Beam Evaporation ◽  
Large Area ◽  
Silicon Thin Film ◽  
Material Loss ◽  
Glass Substrates

ABSTRACTRigorous finite element optical simulations have been used to examine the absorption of light in various crystalline silicon based, nanostructured solar cell architectures. The compared structures can all be produced on glass substrates using a periodically structured dielectric coating and a combination of electron-beam evaporation of silicon and subsequent solid phase crystallization. A required post-treatment by selective etching of non-compact silicon regions results in an absorber material loss. We show that by adequately tailoring the optical design around the processed silicon layer, the absorptance loss due to material removal can be completely overcome. The resulting silicon structure, which is an array of holes with non-vertical sidewalls, shows promising light path enhancement and features an even higher absorptance than the initial nanodome structure of the unetched absorber.

High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

2011 ◽  
Vol 22 (37) ◽  
pp. 375204 ◽  
Author(s):  
S Darbari ◽  
M Shahmohammadi ◽  
M Mortazavi ◽  
S Mohajerzadeh ◽  
Y Abdi ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Silicon Silicon

Supporting plasma processes for fabrication of n-doped nano-crystalline silicon thin film on low-cost glass substrates

Vacuum ◽  
2021 ◽  
pp. 110622
Author(s):  
Tung Thanh Bui ◽  
Tien Minh Huynh ◽  
Diep Ngoc LE ◽  
Phuoc Van Tran ◽  
Chien Mau Dang
Keyword(s):  
Thin Film ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Silicon Thin Film ◽  
Glass Substrates ◽  
Nano Crystalline

Oxidation Reduction in Nanocrystalline Silicon Grown by Hydrogen-Profiling Technique

2016 ◽  
Vol 41 ◽  
pp. 9-17 ◽  
Author(s):  
Christopher J. Arendse ◽  
Theophillus F.G. Muller ◽  
Franscious R. Cummings ◽  
Clive J. Oliphant
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Concentration ◽  
Film Growth ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Substrate Interface ◽  
Nano Crystalline

The deposition of a compact amorphous silicon/nano-crystalline silicon material is demonstrated by hot-wire chemical vapour deposition using a sequential hydrogen profiling technique at low hydrogen dilutions. Nano-crystallite nucleation occurs at the substrate interface that develops into a uniform, porous crystalline structure as the growth progresses. A further reduction in the H-dilution results in the onset of a dense amorphous silicon layer. The average crystalline volume fraction and nano-crystallite size in the sample bulk amounts to 30% and 6 nm, respectively, as probed by Raman spectroscopy using the 647 nm excitation. The change in hydrogen dilution is accompanied by a graded hydrogen concentration depth-profile, where the hydrogen concentration decreases as the growth progresses. The level of post-deposition oxidation is considerably reduced, as inferred from infrared spectroscopy. The presence of oxygen is mainly confined to the substrate interface as a result of thermal oxidation during thin film growth.

Comparison of Vapor Phase and Liquid Phase Epitaxy for Deposition of Crystalline Si on Glass

1996 ◽  
Vol 426 ◽  
Author(s):  
J. Kühnle ◽  
R. B. Bergmann ◽  
J. Krinke ◽  
J. H. Werner
Keyword(s):  
Liquid Phase ◽  
Vapor Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Glass Substrates ◽  
Chemical Vapor Deposited ◽  
Si Films ◽  
Surface Morphologies ◽  
Growth Rate Anisotropy

AbstractWe compare the suitability of vapor phase and liquid phase epitaxy in a two step deposition process for the formation of thin crystalline Si films on glass substrates. In a first deposition step, we form polycrystalline Si seeding layers on glass. In a second step, we increase the thickness either by vapor phase or liquid phase epitaxy. Liquid phase epitaxy leads to growth of faceted grains of more than 100 μm in diameter but the films are not continuous. In contrast, chemical vapor deposition results in continuous, smooth films with grain sizes up to 7 μm. This difference of morphology originates from the influence of supersaturation and growth rate anisotropy. Chemical vapor deposited films exhibit surface morphologies and electrical properties that are promising for the preparation of crystalline thin film Si solar cells.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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