Mono-crystalline silicon strips grown by liquid phase epitaxy for photovoltaic applications

2010 ◽  
Author(s):  
Bo Li ◽  
Adrian H. Kitai
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystalline Silicon ◽  
Photovoltaic Applications

(Invited) Electrochemical Liquid Phase Epitaxy of Crystalline Silicon Films

2021 ◽  
Vol MA2021-01 (24) ◽  
pp. 930-930
Author(s):  
Stephen Maldonado ◽  
Nathanael Downes
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystalline Silicon ◽  
Silicon Films

Extremely Low Temperature Silicon Liquid Phase Epitaxy

1995 ◽  
Vol 386 ◽  
Author(s):  
M. Konuma ◽  
I. Silier ◽  
A. Gutjahr ◽  
E. Bauser ◽  
F. Banhart ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Hydrofluoric Acid ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Extended Defects ◽  
Glass Substrates ◽  
Nano Crystalline ◽  
Amorphous Glass ◽  
Substrate Surfaces

ABSTRACTBy liquid phase epitaxy (LPE) we have grown silicon layers on silicon and partially masked silicon at temperatures below 450 °C from Ga and Ga-In solutions. Oxidation of the cleaned silicon substrate surfaces before epitaxial growth has been prevented by a buffered hydrofluoric acid treatment. The epitaxial layers reached a thickness of 7 jim and were free of extended defects.Low growth temperatures make it possible to grow silicon layers also on pre-treated glass substrates. The amorphous glass is first coated with a thin nano-crystalline silicon layer which is deposited by plasma processes from a mixture of SiH4/H2 gas. The grains in the silicon layers grown from Ga solution on glass have reached sizes up to 100 μm.

High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L217-L219 ◽  
Author(s):  
Toru Ujihara ◽  
Kazuo Obara ◽  
Noritaka Usami ◽  
Kozo Fujiwara ◽  
Gen Sazaki ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
High Quality

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Indium phosphide and quaternary doping superlattices grown by liquid-phase epitaxy

1987 ◽  
Vol 23 (7) ◽  
pp. 324 ◽  
Author(s):  
P.D. Greene ◽  
A.D. Prins ◽  
D.J. Dunstan ◽  
A.R. Adams
Keyword(s):  
Liquid Phase ◽  
Indium Phosphide ◽  
Liquid Phase Epitaxy
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