Comparison of Vapor Phase and Liquid Phase Epitaxy for Deposition of Crystalline Si on Glass

1996 ◽  
Vol 426 ◽  
Author(s):  
J. Kühnle ◽  
R. B. Bergmann ◽  
J. Krinke ◽  
J. H. Werner
Keyword(s):  
Liquid Phase ◽  
Vapor Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Glass Substrates ◽  
Chemical Vapor Deposited ◽  
Si Films ◽  
Surface Morphologies ◽  
Growth Rate Anisotropy

AbstractWe compare the suitability of vapor phase and liquid phase epitaxy in a two step deposition process for the formation of thin crystalline Si films on glass substrates. In a first deposition step, we form polycrystalline Si seeding layers on glass. In a second step, we increase the thickness either by vapor phase or liquid phase epitaxy. Liquid phase epitaxy leads to growth of faceted grains of more than 100 μm in diameter but the films are not continuous. In contrast, chemical vapor deposition results in continuous, smooth films with grain sizes up to 7 μm. This difference of morphology originates from the influence of supersaturation and growth rate anisotropy. Chemical vapor deposited films exhibit surface morphologies and electrical properties that are promising for the preparation of crystalline thin film Si solar cells.

Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44

1983 ◽  
Vol 54 (8) ◽  
pp. 4543-4552 ◽  
Author(s):  
K.‐H. Goetz ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
J. Selders ◽  
A. V. Solomonov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Liquid Phase ◽  
Vapor Phase ◽  
Liquid Phase Epitaxy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Impurity Incorporation ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Correlation of Surface Morphologies with Mn Compositions of Ga1-xMnxAs Epilayers Grown by Liquid Phase Epitaxy

2002 ◽  
Vol 719 ◽  
Author(s):  
Hwa-Mok Kim ◽  
Jae-Hyeon Leem ◽  
Sung Woo Choi ◽  
Deuk Young Kim ◽  
Tae-Won Kang
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Mixed Solvent ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Energy Dispersive ◽  
Surface Layers ◽  
X Ray ◽  
Diluted Magnetic ◽  
Surface Morphologies

AbstractIn this letter, we investigated the correlation between as-grown surface morphologies and Mn compositions of Ga1-xMnxAs epilayers - a III-V diluted magnetic semiconductor - grown by liquid phase epitaxy (LPE). Ga1-xMnxAs epilayers were grown at 595 °C from 50 % Ga + 50 % Bi mixed solvent. The grown layers were characterized by energy dispersive x-ray analysis (EDS) and atomic forced microscopy (AFM). The Mn composition measured by EDS after growth process was varied from 1 to 7 %. As increasing Mn composition surface morphologies of as-grown Ga1-xMnxAs epilayers were varied. At higher Mn compositions, the morphology of the surface layers degrades strongly, preventing removal of the solution-melt from it. Key words: LPE, as-grown, surface morphology, Mn composition, Ga1-xMnxAs, energy-dispersive x-ray analysis (EDS), atomic forced microscopy (AFM).

Deposition of Amorphous and Microcrystalline Si,C Alloy Thin Films by a Remote Plasma-Enhanced Chemical-Vapor Deposition Process

1991 ◽  
Vol 219 ◽  
Author(s):  
C. Wang ◽  
G. Lucovsky ◽  
R. J. Nemanich
Keyword(s):  
Raman Spectra ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Degree Of Crystallinity ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Silicon Carbon ◽  
Infrared Measurements ◽  
Si Films ◽  
The Degree Of Crystallinity

ABSTRACTWe have extended the remote PECVD process to the deposition of intrinsic and doped, amorphous and microcrystalline silicon, carbon alloy films, a-Si,C:H and μc-Si,C, respectively. The electrical and optical properties of a-Si,C:H deposited by remote PECVD are comparable to those of films deposited by the glow discharge or GD process. The degree of crystallinity in the μc-Si,C alloys, as determined from the relative intensities of crystalline and amorphous features in the Raman spectra, is lower than that of μc-Si films deposited under comparable deposition conditions. The Raman spectra indicate that the crystallites in the μc-Si,C alloys are Si, while the infrared measurements establish that the intervening amorphous component is an a-Si,C:H alloy.

¼c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process

1990 ◽  
Vol 192 ◽  
Author(s):  
C. Wang ◽  
G. N. Parsons ◽  
S. S. Kim ◽  
E. C. Buehler ◽  
R. J. Nemanich ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Substrate Material ◽  
Degree Of Crystallinity ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Type C ◽  
Si Films ◽  
P Type

ABSTRACTIn an earlier study, we deposited ¼c-Si thin films by reactive magnetron sputtering (RMS). Here we extend our studies to the deposition of both undoped and high conductivity N-type and P-type ¼c-Si thin films by a remote PECVD. We show that ¼c-Si films can be deposited by bringing hydrogen, H2, into the source gas mixtures. The H2 could introduced by either upstream in a He/H2 mixture and directly plasma excited, or downstream, and be remotely excited along with the silane, SiH4, feed gas. The degree of crystallinity is shown to depend on the hydrogen dilution, the substrate temperature and the substrate material.

scholarly journals One-step vapor-phase synthesis of transparent high refractive index sulfur-containing polymers

2020 ◽  
Vol 6 (28) ◽  
pp. eabb5320 ◽  
Author(s):  
Do Heung Kim ◽  
Wontae Jang ◽  
Keonwoo Choi ◽  
Ji Sung Choi ◽  
Jeffrey Pyun ◽  
...  
Keyword(s):  
Refractive Index ◽  
Vapor Phase ◽  
Elemental Sulfur ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Refractive Index ◽  
Visible Range ◽  
Wide Range ◽  
One Step ◽  
Vapor Phase Synthesis

High refractive index polymers (HRIPs) have recently emerged as an important class of materials for use in a variety of optoelectronic devices including image sensors, lithography, and light-emitting diodes. However, achieving polymers having refractive index exceeding 1.8 while maintaining full transparency in the visible range still remains formidably challenging. Here, we present a unique one-step vapor-phase process, termed sulfur chemical vapor deposition, to generate highly stable, ultrahigh refractive index (n > 1.9) polymers directly from elemental sulfur. The deposition process involved vapor-phase radical polymerization between elemental sulfur and vinyl monomers to provide polymer films with controlled thickness and sulfur content, along with the refractive index as high as 1.91. Notably, the HRIP thin film showed unprecedented optical transparency throughout the visible range, attributed to the absence of long polysulfide segments within the polymer, which will serve as a key component in a wide range of optical devices.

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