Post CMP Cleaning Using Ice Scrubber Cleaning

1995 ◽  
Vol 386 ◽  
Author(s):  
N. Takenaka ◽  
Y. Satoh ◽  
A. Ishihama ◽  
K. Sakiyama
Keyword(s):  
Mass Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
High Speed ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Mos Capacitors ◽  
Metal Impurities ◽  
Cleaning Technology ◽  
Si Wafer

ABSTRACTThe surface cleaning technology with the use of ice scrubber cleaning has been developed to remove the particles after Chemical Mechanical Polishing (CMP) process. The ice particles with a high speed nearly equal to the sound velocity bombarded the Si wafer surface, as a result, the residue from the slurry solution was reduced from ∼5/cm2 to ∼0.05/cm2 and the metal impurities are completely eliminated below the defect limitation for ICP mass spectroscopy. The charge build-up damage due to the high speed particles is not introduced into the the MOS capacitors. This technology is quite effective, compared with the conventional brush scrubber method and is applicable for the cleaning process below the quarter micron devices.

Resist Stripping and Surface Cleaning Technique Using High Speed Steam-Droplet Mixture

2007 ◽  
Author(s):  
T. Sanada ◽  
M. Shirota ◽  
M. Watanabe ◽  
Y. Morita ◽  
M. Yamase
Keyword(s):  
High Speed ◽  
Video Camera ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
High Speed Video Camera ◽  
Digital Microscope ◽  
Phase Doppler Anemometer ◽  
Free Environment ◽  
Droplet Mixture ◽  
Si Wafer

A novel resist stripping and surface cleaning technique is proposed. We have improved wet vapor resist stripping technique (Ojima & Ohmi) using high-speed steam and purified water droplets mixture. Relatively low pressure steam (0.1MPa∼0.2MPa) is mixed with purified water in front of the nozzle, and sprayed to Si wafer with resist. Using this new technique, we are able to strip resist without chemicals very quickly and also to clean a wafer surface, i.e., to eliminate some particles. This technique has an advantage not only in reducing some processes of semiconductor manufacturing but also in maintaining chemical-free environment. Both droplet velocity and diameter distributions were measured by Phase Doppler Anemometer (PDA). Resist stripping was observed with a high-speed video camera and the fringes of the removed resist region were observed with a digital microscope. Mechanism of this resist stripping process is discussed.

Si wafer surface cleaning using laser-induced shock wave: a new dry cleaning methodology

2003 ◽  
Vol 169-170 ◽  
pp. 178-180 ◽  
Author(s):  
S.H. Lee ◽  
J.G. Park ◽  
J.M. Lee ◽  
S.H. Cho ◽  
H.K. Cho
Keyword(s):  
Shock Wave ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Dry Cleaning ◽  
Si Wafer

A Characterization of New Cleaning Method Using Electrolytic Ionized Water for Poly Si Cmp Process

2001 ◽  
Vol 671 ◽  
Author(s):  
N. Miyashita ◽  
Shin-ichiro Uekusa ◽  
S. Seta ◽  
T. Nishioka
Keyword(s):  
Surface Roughness ◽  
High Speed ◽  
Crystal Defects ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Force Microscopy ◽  
Cleaning Method ◽  
Atomic Force ◽  
Chemical Impurities ◽  
Large Numbers

ABSTRACTA Trench isolation technology has been developed and applied to high-speed bipolar LSI production. In general, the wafer surface after a conventional ploy-Si Chemical-Mechanical-Polishing (CMP) is contaminated with silica particles and chemical impurities. These contaminations produce some unexpected patterns and crystal defects in the wafer surface layer after oxidation. It is difficult to remove them by the conventional cleaning techniques. Therefore, we have established the new post CMP cleaning method, using the electrolytic ionized water containing chemical additive of a small quantity. The anode water has the cleaning effect for the metallic and organic contaminations, and the cathode water has the removing effect for the particles and the etching effect for the poly-Si surface. For this new cleaning process, it is important to avoid the chemical mechanical damages on the surface and to control the surface roughness. Our experimental work has been focused on the large numbers of the remaining particle and the surface roughness using a particle counter and an atomic force microscopy (AFM). We herein report the properties of the electrolytic ionized water and the examined results of poly-Si surface after CMP process. It was found that the electrolytic ionized water is effective for surface control, and the new cleaning process is useful for CMP process.

Electrolyzed Water as an Alternative for Environmentally Benign Semiconductor Cleaning

2002 ◽  
Vol 17 (6) ◽  
pp. 1298-1304 ◽  
Author(s):  
Kunkul Ryoo ◽  
Byeongdoo Kang ◽  
Osao Sumita
Keyword(s):  
Inductively Coupled Plasma ◽  
Environmental Safety ◽  
Contact Angles ◽  
Wafer Surface ◽  
Particle Removal ◽  
Electrolyzed Water ◽  
Concentration Changes ◽  
Cleaning Technology ◽  
Wafer Surfaces ◽  
Si Wafer

The present semiconductor cleaning technology is based upon RCA cleaning [W. Kern and D.A. Puotinen, Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology (RCA Rev., 1970) pp. 187–206], a high-temperature process that consumes vast amounts of chemicals and ultrapure water (UPW) [T. Futatsuki, T. Imaoka, Y. Yamashita, and K. Mitsumori, J. Electrochem. Soc., 142, 966 (1995)]. Therefore, this technology gives rise to many environmental issues, and some alternatives such as electrolyzed water (EW) are being studied. In this work, intentionally contaminated Si wafers were cleaned using electrolyzed water. The electrolyzed water was generated by an electrolysis system that consists of anode, cathode, and middle chambers. Oxidative water and reductive water were obtained in the anode and cathode chambers, respectively. When a NH4Cl electrolyte was supplied in the middle chamber, the oxidation–reduction potential and pH for anode water (AW) and cathode water (CW) were +1050 mV and 4.8, and −750 mV and 10.0, respectively. AW and CW deterioriated after electrolysis but maintained their characteristics for more than 40 min, which was sufficient for cleaning. Their deterioration was correlated with CO2 concentration changes dissolved from air. Contact angles of UPW, AW, and CW on DHF-treated Si wafer surfaces were 65.9°, 66.5°, and 56.8°, respectively, which characterizes clearly the electrolyzed water. To analyze the amount of metallic impurities on Si wafer surface, inductively coupled plasma, mass spectroscopy was introduced. AW was effective for Cu removal, while CW was more effective for Fe removal. To analyze the number of particles on Si wafer surfaces, we used the particle measurement Tencor 6220. The particle distributions after various particle removal processes maintained the same pattern. Overflow of EW during cleaning particles resulted in the same cleanness as that obtained with the RCA cleaning process. The roughness of patterned wafer surfaces after EW cleaning was similar to that of as-received wafers. Regardless of process sequence in this work, RCA consumed about 9 l of chemicals, while EW consumed only 400 ml HCl electrolyte or 600 ml NH4Cl electrolyte to clean 8-in. wafers. It was thus concluded that EW cleaning technology would be very effective for releasing environmental safety, and health issues in the next generation of semiconductor manufacturing.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Measuring Surface Uniformity in Chemical Mechanical Polishing

2009 ◽  
Vol 76-78 ◽  
pp. 459-464
Author(s):  
Jae Won Baik ◽  
Chang Wook Kang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Geometric Mean ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Semiconductor Wafer ◽  
Statistical Process ◽  
Significant Step ◽  
The Difference ◽  
Thickness Variations ◽  
The Stability

Chemical mechanical polishing (CMP) is a technique used in semiconductor fabrication for planarizing the top surface of an in-process semiconductor wafer. Especially, Post-CMP thickness variations are known to have a severe impact on the stability of downstream processes and ultimately on device yield. Hence understanding how to quantify and characterize this non-uniformity is significant step towards statistical process control to achieve higher quality and enhanced productivity. The main reason is that the non-uniformed interface between the wafer and the machine-pad adversely affects the polishing performance and ultimate surface uniformity. The purpose of this paper is to suggest a new measure that estimates the uniformity of wafer surface considering the difference of the amount of abrasion between the center and the edge. This new measure which is called the Coefficient of Uniformity is defined as the following ratio: Geometric Mean (GM) / Arithmetic Mean (AM). This metric can be evaluated regionally to quantify the non-uniformity on the wafer surface from the center to the edge. Further simulations show that this new measure is insensitive to shift of the wafer center and sensitive to shift of the wafer edge. This trend indicates that this new measure is a very useful to test the non-uniformity of wafer after CMP polishing.

New Measurement Concept of Nanometer-Level Defects on Si Wafer Surface by Using Micro Contact Sensor

2012 ◽  
Vol 497 ◽  
pp. 137-141 ◽  
Author(s):  
Wen Jian Lu ◽  
Yuki Shimizu ◽  
Wei Gao
Keyword(s):  
Temperature Rise ◽  
Electric Circuit ◽  
Frictional Heat ◽  
Wafer Surface ◽  
Fem Model ◽  
Element Simulation ◽  
Type Contact ◽  
Contact Sensor ◽  
Measurement Concept ◽  
Si Wafer

A thermal-type contact sensor was proposed to detect small defects, the heights of which are less than 16 nm, on the wafer surface. The feasibility of the contact sensor, which detects frictional heat generated at the contact, was theoretically investigated focusing on the temperature rise of the sensor element. Simulation results with both the simple model of heat transfer and the FEM model showed that the expected temperature rise of the contact sensor is enough to be detected by the conventional electric circuit.

Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling
Keyword(s):  
Optical Fiber ◽  
Measurement Technique ◽  
Thermal Processing ◽  
High Speed ◽  
Rapid Thermal Processing ◽  
Wafer Surface ◽  
Speed Measurement ◽  
Temperature Method ◽  
Emissivity Measurement ◽  
Emissivity Measurements

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

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