A Characterization of New Cleaning Method Using Electrolytic Ionized Water for Poly Si Cmp Process

2001 ◽  
Vol 671 ◽  
Author(s):  
N. Miyashita ◽  
Shin-ichiro Uekusa ◽  
S. Seta ◽  
T. Nishioka
Keyword(s):  
Surface Roughness ◽  
High Speed ◽  
Crystal Defects ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Force Microscopy ◽  
Cleaning Method ◽  
Atomic Force ◽  
Chemical Impurities ◽  
Large Numbers

ABSTRACTA Trench isolation technology has been developed and applied to high-speed bipolar LSI production. In general, the wafer surface after a conventional ploy-Si Chemical-Mechanical-Polishing (CMP) is contaminated with silica particles and chemical impurities. These contaminations produce some unexpected patterns and crystal defects in the wafer surface layer after oxidation. It is difficult to remove them by the conventional cleaning techniques. Therefore, we have established the new post CMP cleaning method, using the electrolytic ionized water containing chemical additive of a small quantity. The anode water has the cleaning effect for the metallic and organic contaminations, and the cathode water has the removing effect for the particles and the etching effect for the poly-Si surface. For this new cleaning process, it is important to avoid the chemical mechanical damages on the surface and to control the surface roughness. Our experimental work has been focused on the large numbers of the remaining particle and the surface roughness using a particle counter and an atomic force microscopy (AFM). We herein report the properties of the electrolytic ionized water and the examined results of poly-Si surface after CMP process. It was found that the electrolytic ionized water is effective for surface control, and the new cleaning process is useful for CMP process.

Novel Cleaning Method of SiC Wafer with Transition Metal Complex

2012 ◽  
Vol 717-720 ◽  
pp. 877-880
Author(s):  
Maiko Kubo ◽  
Makoto Hidaka ◽  
Motohiro Kageyama ◽  
Tomomichi Okano ◽  
Hisayoshi Kobayashi
Keyword(s):  
Transition Metal ◽  
Metal Complex ◽  
Transition Metal Complex ◽  
Pure Water ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Cleaning Method ◽  
Wafer Cleaning ◽  
Atomic Force ◽  
Sic Wafer

In this article, we report a new cleaning method for silicon carbide (SiC) wafers. We found that the dipping treatment in hydrogen fluoride (HF) solution damages the SiC in the “RCA cleaning process”, so we have designed a new cleaning method that does not use HF and reduced the cleaning process to three steps. The characteristic factor of this new method is using a transition metal complex. Generally, no metals have been used for wafer cleaning, but we deliberately used metal and found it could clean the wafer surface very well. After cleaning, the atomic force microscope (AFM) and “Candela” images showed that the particles on most parts of the SiC surface had been removed and the contact angle for ultra-pure water became very low.

Evolution of TiN Coating Surface Roughness during Physical Vapor Deposition on High Speed Steel Substrate

2014 ◽  
Vol 604 ◽  
pp. 67-70
Author(s):  
Leonid Kupchenko ◽  
Rauno Tali ◽  
Eron Adoberg ◽  
Valdek Mikli ◽  
Vitali Podgursky
Keyword(s):  
Surface Roughness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Speed ◽  
Steel Substrate ◽  
High Speed Steel ◽  
Growth Exponent ◽  
Force Microscopy ◽  
Tin Coatings ◽  
Atomic Force

TiN coatings with different thickness were prepared by arc ion plating (AIP) physical vapor deposition (PVD) on high speed steel (HSS) substrates. TiN coatings surface roughness was investigated by atomic force microscopy (AFM) and 3D optical profilometry and growth kinetics was described using scaling exponents β and α. The growth exponent β is 0.91-1.0 and the roughness exponent α is 0.77-0.81. Due to relatively high value of the exponent α, the surface diffusion is likely predominant smoothening mechanism of TiN growth.

Etching Performance Improvement On Semiconductor Silicon Wafers With Redesigned Etching Drum

2011 ◽  
Author(s):  
Rozzeta Dolah ◽  
Hamidon Musa ◽  
Astuty Amrin
Keyword(s):  
Surface Roughness ◽  
Performance Improvement ◽  
Silicon Wafer ◽  
Etching Process ◽  
Wafer Surface ◽  
Roughness Parameters ◽  
Force Microscopy ◽  
Atomic Force ◽  
Empty Slot ◽  
Empty Area

Proses etching atau punaran melibatkan pelbagai tindak balas kimia dan sangat penting dalam menentukan kualiti wafer silikon. Projek ini menyelesaikan masalah utama wafer ketika proses punaran, iaitu keserakan data pembuangan sisa wafer di sepanjang dram punaran. Cecair punaran yang digunakan dalam projek ini terdiri daripada komposisi asid HNO3, HF, and CH3COOH. Dram punaran telah diubahsuai untuk menyelesaikan masalah pembuangan sisa wafer yang rendah di setiap wafer pertama dan terakhir dalam sesuatu kompatmen dram. Tujuan utamanya adalah untuk mengurangkan jurang perbezaan variasi dalam pembuangan sisa wafer, di mana nilai pembuangan silicon adalah rendah berbanding pembuangan silicon wafer di tengah kompatmen. Antara cadangan tersebut adalah menambahkan "kepingan wafer PVC tahan asid" di sebelah wafer pertama dan terakhir dalam setiap kompatmen. Selepas memperoleh keputusan yang memberangsangkan, kepingan PVC tersebut dikekalkan dalam rekabentuk dram yang baru. Sifat wafer pertama dan terakhir dinilaikan untuk memastikan tiada kualiti yang terjejas berbanding wafer-wafer di tengah kompatmen. Morfologi permukaan dan kekasaran wafer (purata kekasaran;Ra dan kekasaran "skewness";Rms) menggunakan mikroskop tujahan atom (AFM) dianalisis untuk dibandingkan dengan dram lama. Keseragaman pembuangan wafer tanpa masalah pembuangan rendah di hujung kompatmen telah diperhatikan. Kata kunci: Proses punaran, permukaan "Micromachining", wafer silicon, pembuangan silicon wafer, kekasaran permukaan wafer silikon Etching process involves various chemical reactions and reflects significantly on the silicon wafer quality. The paper addresses the major problem on wafers during etching that is wafer removal distribution throughout etching drum compartment. The etchant used in this study were the composition of HNO3, HF, and CH3COOH. The etching drum has been redesigned to overcome the lower removal problem at the end of each compartment and to reduce the big disparity in wafer removal distribution. The proposed idea is to install a piece of "circumferential acid resistant PVC wafer" for the remaining empty slot (empty area without wafers) at each end of a compartment. The permanent PVC piece with certain gap at each end is then fabricated for the new drum design. The characteristics of the end wafers are compared with other wafers in the compartment to study the etching difference that leads to this problem. Surface morphology and surface roughness parameters (arithmetic roughness mean; Ra and surface skewness [roughness root mean square]; Rms) using atomic force microscopy (AFM) comparison between old drum design (big wafer gap) and new drum design (smaller gap with additional PVC chip) had been analyzed. The uniformity without lower removal problem at the end compartment is observed in removal distribution graph. Key words: Etching process; surface micromachining; silicon wafer; etching removal; silicon wafer surface roughness

Surface roughness measurements of vanadium-contaminated fluidized cracking catalysts by atomic force microscopy

1996 ◽  
Vol 54 ◽  
pp. 866-867
Author(s):  
H. Kinney ◽  
M.L. Occelli ◽  
S.A.C. Gould
Keyword(s):  
Surface Roughness ◽  
Zeolite Y ◽  
Atomic Level ◽  
Microporous Structure ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Roughness Measurements ◽  
Cracking Catalysts

For this study we have used a contact mode atomic force microscope (AFM) to study to topography of fluidized cracking catalysts (FCC), before and after contamination with 5% vanadium. We selected the AFM because of its ability to well characterize the surface roughness of materials down to the atomic level. It is believed that the cracking in the FCCs occurs mainly on the catalysts top 10-15 μm suggesting that the surface corrugation could play a key role in the FCCs microactivity properties. To test this hypothesis, we chose vanadium as a contaminate because this metal is capable of irreversibly destroying the FCC crystallinity as well as it microporous structure. In addition, we wanted to examine the extent to which steaming affects the vanadium contaminated FCC. Using the AFM, we measured the surface roughness of FCCs, before and after contamination and after steaming.We obtained our FCC (GRZ-1) from Davison. The FCC is generated so that it contains and estimated 35% rare earth exchaged zeolite Y, 50% kaolin and 15% binder.

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

Brittle Behaviour in Aspirin Crystals: Evidence of Spalling Fracture

2020 ◽  
Author(s):  
Benjamin P. A. Gabriele ◽  
Craig J. Williams ◽  
Douglas Stauffer ◽  
Brian Derby ◽  
Aurora J. Cruz-Cabeza
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Spalling Fracture ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Imaging

<div> <div> <div> <p>Single crystals of aspirin form I were cleaved and indented on their dominant face. Upon inspection, it was possible to observe strongly anisotropic shallow lateral cracks due to the extreme low surface roughness after cleavage. Atomic Force Microscopy (AFM) imaging showed spalling fractures nucleating from the indent corners, forming terraces with a height of one or two interplanar spacings d100. The formation of such spalling fractures in aspirin was rationalised using basic calculations of attachment energies, showing how (100) layers are poorly bonded when compared to their relatively higher intralayer bonding. An attempt at explaining the preferential propagation of these fractures along the [010] direction is discussed. </p> </div> </div> </div>

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