Microhardness, Structure, and Composition Study of Amorphous Hydrogenated Boron Carbide

1995 ◽  
Vol 383 ◽  
Author(s):  
Shu-Han Lin ◽  
Dong Li ◽  
Bernard J. Feldman
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Optical Absorption ◽  
Boron Carbide ◽  
Infrared Absorption ◽  
Rf Plasma ◽  
Plasma Decomposition ◽  
Optical Bandgaps ◽  
Composition Study ◽  
Amorphous Hydrogenated Boron Carbide

ABSTRACTWe have grown amorphous hydrogenated boron carbide thin films by rf plasma decomposition of diborane and methane. The chemical composition, infrared absorption, optical absorption, and microhardness of these thin films were measured. As a function of increasing diborane concentration in the feedstock, we observe increasing boron and hydrogen concentrations, increasing infrared absorption at 1330 cm−1 due to boron icosahedra, increasing optical bandgaps, and an unchanging microhardness in the grown films. The microhardness should have decreased due to the increasing hydrogen concentration; this expected decrease may have been balanced by an increased microhardness due to the boron icosahedra.

Microhardness Study Of Cathode-Mounted Amorphous Hydrogenated Boron Carbide

1996 ◽  
Vol 436 ◽  
Author(s):  
Shu-Han Lin ◽  
Dong Li ◽  
Bernard J. Feldman
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Boron Carbide ◽  
Infrared Absorption ◽  
Band Gaps ◽  
Rf Plasma ◽  
Microhardness Study ◽  
Optical Band Gaps ◽  
Plasma Decomposition ◽  
Amorphous Hydrogenated Boron Carbide

AbstractWe have grown cathode-mounted amorphous hydrogenated boron carbide thin films by rf plasma decomposition of diborane and methane. The chemical composition, infrared absorption, optical absorption, microhardness and adhesion of these thin films were measured. As a function of increasing diborane concentration in the feedstock, we observe increasing boron and decreasing hydrogen concentrations, increasing infrared absorption at 1300 cm-1 due to boron icosahedra, increasing optical band gaps, dramatically increased microhardness, and increased adhesion to the underlying substrates of these thin films. These results provide evidence that the presence of boron icosahedra increases microhardness, adhesion, and optical band gaps.

Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films

2018 ◽  
Vol 173 (11-12) ◽  
pp. 1075-1082 ◽  
Author(s):  
Gennady Remnev ◽  
Jindrich Musil ◽  
Vladislav Tarbokov ◽  
Sergey Pavlov ◽  
Fedor Konusov ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Boron Carbide ◽  
Ion Irradiation ◽  
Intense Electron

The Influence of Deposition Conditions on the Properties of a-Sic:H Thin Films

1990 ◽  
Vol 192 ◽  
Author(s):  
L. Magafas ◽  
D. Girginoudi ◽  
N. Georgoulas ◽  
A. Thanailakis
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Optical Absorption ◽  
Flow Rate ◽  
Growth Conditions ◽  
Optical Absorption Coefficient ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow ◽  
Composition Structure ◽  
Deposition Conditions

ABSTRACTThe dependence of chemical composition, structure and optoelectronic properties of sputtered a-SiC:H thin films on substrate temperature, Ts, and hydrogen flow rate has been studied. The films are amorphous for the growth conditions used in this work. The chemical composition of the alloys is very little influenced by the Ts, whereas the hydrogen content and the optical absorption coefficient depends strongly on Ts and hydrogen flow rate.

The 1280 Cm−1 Absorption Line in Amorphous Hydrogenated Boron Carbide

1998 ◽  
Vol 517 ◽  
Author(s):  
Shu-Han Lin ◽  
Bernard J. Feldman
Keyword(s):  
Boron Carbide ◽  
Infrared Absorption ◽  
Carbon Concentration ◽  
Boron Concentration ◽  
Peak Position ◽  
Intense Line ◽  
Integrated Intensity ◽  
Amorphous Hydrogenated Boron Carbide ◽  
Carbon Concentrations ◽  
Absorption Measurements

AbstractWe report infrared absorption measurements that provide evidence for the presence of boron carbide icosahedra in amorphous hydrogenated boron carbide thin films. The infrared absorption spectra is dominated by an intense line at 1280 cm-1 with a FWHM of ≃320 cm-1. Similar lines have been previously reported in polycrystalline boron carbide, where boron carbide icosahedra make up the unit cell. In both systems, the linewidth narrows and the peak position shifts to higher energy with increasing carbon concentrations. From annealing studies of amorphous hydrogenated boron carbide, hydrogen plays a very small role in the 1280 cm-1 line. Finally, the integrated intensity of the 1280 cm-1 line is a sublinear function of the boron concentration, providing further evidence that the carbon concentration in these icosahedra increases as the carbon concentration of the film increases.

Study of Different Phases in a-C:H:N Thin Films Deposited by Plasma- Enhanced Chemical Vapour Deposition: A comparision Between Theoretical and Experimental Data

2001 ◽  
Vol 672 ◽  
Author(s):  
F. Antoniella ◽  
L. Valentini ◽  
A. Continenza ◽  
L. Lozzi ◽  
S. Santucci
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Rf Plasma ◽  
Weighted Density ◽  
X Ray ◽  
Plasma Decomposition ◽  
Amorphous Carbon Nitride ◽  
The Mean

ABSTRACTThe electronic structure of amorphous carbon nitride (a-C:H:N) thin films prepared by radiofrequency (rf) plasma decomposition of CH4/N2 mixture was determined by soft x-ray photoe1ectron spectroscopy by the mean of synchrotron radiation source. On increasing N2 fraction, the valence band shows profound changes. The new features are identified by a comparison of the experimental spectra with theoretically weighted density of the states of graphite and C3N4 structures.

Chemical composition effects in the thin films of the colossal magnetoresistive perovskite manganates grown by MOCVD

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-659-Pr8-666 ◽  
Author(s):  
O. Yu. Gorbenko ◽  
I. E. Graboy ◽  
A. A. Bosak ◽  
V. A. Amelichev ◽  
A. Yu. Ganin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Colossal Magnetoresistive ◽  
Composition Effects

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters
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