Summary Abstract: Thin films of hydrogenated amorphous carbon prepared by rf plasma decomposition of methane

1985 ◽  
Vol 3 (3) ◽  
pp. 694-695 ◽  
Author(s):  
E. T. Prince ◽  
M. M. Romach
2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


2014 ◽  
Vol 258 ◽  
pp. 219-224 ◽  
Author(s):  
S.M.M. Dufrène ◽  
F. Cemin ◽  
M.R.F. Soares ◽  
C. Aguzzoli ◽  
M.E.H. Maia da Costa ◽  
...  

2000 ◽  
Vol 9 (3-6) ◽  
pp. 781-785 ◽  
Author(s):  
M. Collins ◽  
R.C. Barklie ◽  
J.V. Anguita ◽  
J.D. Carey ◽  
S.R.P. Silva

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