Chemical composition effects in the thin films of the colossal magnetoresistive perovskite manganates grown by MOCVD

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-659-Pr8-666 ◽  
Author(s):  
O. Yu. Gorbenko ◽  
I. E. Graboy ◽  
A. A. Bosak ◽  
V. A. Amelichev ◽  
A. Yu. Ganin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Colossal Magnetoresistive ◽  
Composition Effects

Substrate and Composition Effects on BSCCO Thin Films Deposited by Aerosol MOCVD

2002 ◽  
Vol 230-232 ◽  
pp. 173-176
Author(s):  
Pedro B. Tavares ◽  
Vitor S. Amaral ◽  
João P. Araújo ◽  
Marta C. Oliveira ◽  
Joaquim M. Vieira
Keyword(s):  
Thin Films ◽  
Composition Effects

Chemical composition, crystallographic structure and impedance spectroscopy of titanium oxynitride TiNxOy thin films

2011 ◽  
Vol 192 (1) ◽  
pp. 693-698 ◽  
Author(s):  
M. Radecka ◽  
E. Pamula ◽  
A. Trenczek-Zajac ◽  
K. Zakrzewska ◽  
A. Brudnik ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Impedance Spectroscopy ◽  
Crystallographic Structure

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Synthesis and Properties of Sb Layered Te/Cd Stack Prepared by Elemental Stack Method

2012 ◽  
Vol 488-489 ◽  
pp. 76-81 ◽  
Author(s):  
Subramani Shanmugan ◽  
Mutharasu Devarajan ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Surface Morphology ◽  
Shape Analysis ◽  
Structural Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Studies ◽  
Sb Doping ◽  
Elemental Layer

Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the films was confirmed by the x-ray diffraction technique. The calculated structural parameters demonstrated the feasibility of Sb doping via SEL method. The topographical and electrical studies of the synthesized thin films depicted the influence of Sb on both surface morphology and conductivity. The values of conductivity of the annealed films were in between 2 x 10-3 and 175 x 10-2 Scm-2. A desired chemical composition of films was confirmed from spectrum shape analysis using energy dispersive x-ray.

Optical Properties of Thin Films of Haycockite

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2023-2033
Author(s):  
Barys Korzun ◽  
Marin Rusu ◽  
Thomas Dittrich ◽  
Anatoly Galyas ◽  
Andrey Gavrilenko
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Composition ◽  
Energy Band ◽  
Surface Photovoltage ◽  
Second Phase ◽  
Energy Band Gap ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ABSTRACTThin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

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