Use of A New High Speed Acrylate Deposition Process to Make Novel Multilayer Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
David G. Shaw ◽  
Marc G. Langlois
Keyword(s):  
Vapor Deposition ◽  
High Speed ◽  
Vacuum Chamber ◽  
Inorganic Material ◽  
Deposition Process ◽  
Multilayer Structures ◽  
Layer Structures ◽  
Wide Range ◽  
New Process ◽  
Deposition Processes

ABSTRACTA new process has been developed to deposit acrylate thin films at speeds of 1500 ft/minute or higher. These films range in thickness from a few hundred Angstroms to a fewmicrons and are uniform in thickness to within 5%. They can vary in refractive index from 1.35 to 1.60 and have mechanical properties from very hard and abrasion resistantto very soft and flexible.The acrylate deposition process was originally developed for multilayer acrylate/aluminum capacitors where over 10,000 layer structures were produced[l]. The process is compatible with other vapor deposition processes such as sputtering, evaporation, and CVD. Both processes can take place at the same time in the same vacuum chamber toproduce various multilayer structures.This paper will discuss some of the features of this process and the associated equipment. It will present examples of the wide range of acrylate/acrylate, acrylate/metal, and acrylate/inorganic material structures that can be made. It will discuss various applications for these structures.

scholarly journals Nanotopographical control of surfaces using chemical vapor deposition processes

2017 ◽  
Vol 8 ◽  
pp. 1250-1256 ◽  
Author(s):  
Meike Koenig ◽  
Joerg Lahann
Keyword(s):  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Polymer Coatings ◽  
Oblique Angle ◽  
Concise Review ◽  
Deposition Processes ◽  
Deposition Techniques ◽  
Post Deposition

In recent years much work has been conducted in order to create patterned and structured polymer coatings using vapor deposition techniques – not only via post-deposition treatment, but also directly during the deposition process. Two-dimensional and three-dimensional structures can be achieved via various vapor deposition strategies, for instance, using masks, exploiting surface properties that lead to spatially selective deposition, via the use of additional porogens or by employing oblique angle polymerization deposition. Here, we provide a concise review of these studies.

Thermal Contact Conductance of Metallic Coated BiCaSrCuO Superconductor/Copper Interfaces at Cryogenic Temperatures

1992 ◽  
Vol 114 (1) ◽  
pp. 21-29 ◽  
Author(s):  
J. M. Ochterbeck ◽  
G. P. Peterson ◽  
L. S. Fletcher
Keyword(s):  
Vapor Deposition ◽  
Thermal Contact ◽  
Deposition Process ◽  
Thermal Contact Conductance ◽  
Experimental Program ◽  
Contact Conductance ◽  
Nickel Substrates ◽  
Deposition Processes ◽  
Cold Pressed ◽  
And Control

The effects of vapor deposited coatings on the thermal contact conductance of cold pressed, normal state BiCaSrCuO superconductor/oxygen-free copper interfaces were experimentally investigated over a pressure range of 200 to 2000 kPa. Using traditional vapor deposition processes, thin coatings of indium or lead were applied to the superconductor material to determine the effect on the heat transfer occurring at the interface. The test data indicate that the contact conductance can be enhanced using these coatings, with indium providing the greater enhancement. The experimental program revealed the need for a better understanding and control of the vapor deposition process when using soft metallic coatings. Also, the temperature-dependent microhardness of copper was experimentally determined and found to increase by approximately 35 percent as the temperature decreased from 300 to 85 K. An empirical model was developed to predict the effect of soft coatings on the thermal contact conductance of the superconductor/copper interfaces. When applied, the model agreed well with the data obtained in this investigation at low coating thicknesses but overpredicted the data as the thickness increased. In addition, the model agreed very well with data obtained in a previous investigation for silver-coated nickel substrates at all coating thicknesses.

scholarly journals Deposition Methods for Microstructured and Nanostructured Coatings on Metallic Bone Implants: A Review

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Bailey Moore ◽  
Ebrahim Asadi ◽  
Gladius Lewis
Keyword(s):  
Plasma Spray ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Aerosol Deposition ◽  
Deposition Process ◽  
Future Research ◽  
Bone Implants ◽  
Implant Surface ◽  
Deposition Processes

A review of current deposition processes is presented as they relate to osseointegration of metallic bone implants. The objective is to present a comprehensive review of different deposition processes used to apply microstructured and nanostructured osteoconductive coatings on metallic bone implants. Implant surface topography required for optimal osseointegration is presented. Five of the most widely used osteoconductive coating deposition processes are reviewed in terms of their microstructure and nanostructure, usable thickness, and cost, all of which are summarized in tables and charts. Plasma spray techniques offer cost-effective coatings but exhibit deficiencies with regard to osseointegration such as high-density, amorphous coatings. Electrodeposition and aerosol deposition techniques facilitate the development of a controlled-microstructure coating at a similar cost. Nanoscale physical vapor deposition and chemical vapor deposition offer an alternative approach by allowing the coating of a highly structured surface without significantly affecting the microstructure. Various biomedical studies on each deposition process are reviewed along with applicable results. Suggested directions for future research include further optimization of the process-microstructure relation, crystalline plasma spray coatings, and the deposition of discrete coatings by additive manufacturing.

Computational Study of Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Film

2008 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Processing Conditions ◽  
Wide Range

In this study, a comprehensive transport model is developed for Halide Chemical Vapor Deposition (HCVD) system which includes gas dynamics, heat and mass transfer, gas-phase and surface chemistry, and radio-frequency induction heating. This model addresses transport of multiple chemical species in high temperature environment with large temperature difference and complex chemical reactions in gas-phase and on the deposition surface. Numerical modeling of the deposition process in a horizontal hot-wall reactor using SiCl4/C3H8/H2 as precursors has been performed over a wide range of operational parameters to quantify the effects of processing parameters on the film growth. The simulations of the deposition process provide detailed information on the gas-phase composition as well as the distributions of gas velocity and temperature in the reactor. The deposition rate on the substrate surface is also predicted. The results illustrate that deposition temperature and the flow rate of carrier gas play an important role in determining the processing conditions and deposition rate. A high concentration of HCl exists in the growth chamber and the etching of the SiC films by HCl has significant effect on the deposition rate. The modeling approach can be further used to improve reactor design and optimization of processing conditions.

Laser Chemical Vapor Deposition of Thick Oxide Coatings

2006 ◽  
Vol 317-318 ◽  
pp. 495-500 ◽  
Author(s):  
Takashi Goto ◽  
Teiichi Kimura
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Oxide Coatings ◽  
Laser Chemical Vapor Deposition ◽  
Deposition Rates ◽  
Thin Film Coatings ◽  
Deposition Processes

Thick oxide coatings have wide-ranged applications typically thermal barrier coatings. Although high speed deposition processes, often plasma spray or electron-beam physical vapor deposition, have been employed for these applications, another route has been pursued to improve the performance of coatings. We have proposed laser chemical vapor deposition (LCVD) for high-speed and thick oxide coatings. Conventional CVD can fabricate coatings at deposition rates of several to several 10 μm/h, and conventional LCVD has been mainly focused on thin film coatings and low temperature deposition. In the present LCVD, high-speed deposition rates ranging from 300 to 3000 μm/h have been achieved for several oxide coatings such as yttria stabilized zirconia (YSZ), TiO2, Al2O3 and Y2O3. This paper describes the effect of deposition conditions on the morphology and deposition rates for the preparation of YSZ and TiO2 by LCVD.

scholarly journals Modeling and Simulation of a Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-25 ◽  
Author(s):  
J. Geiser ◽  
M. Arab
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Real Life ◽  
Chemical Vapor ◽  
Single Species ◽  
Deposition Process ◽  
Control Mechanisms ◽  
Metallic Bipolar Plates ◽  
Complicated Model ◽  
Deposition Processes

We are motivated to model PE-CVD (plasma enhanced chemical vapor deposition) processes for metallic bipolar plates, and their optimization for depositing a heterogeneous layer on the metallic plate. Moreover a constraint to the deposition process is a very low pressure (nearly a vacuum) and a low temperature (about 400 K). The contribution of this paper is to derive a multiphysics system of multiple physics problems that includes some assumptions to simplify the complicate process and allows of deriving a computable mathematical model without neglecting the real-life processes. To model the gaseous transport in the apparatus we employ mobile gas phase streams, immobile and mobile phases in a chamber that is filled with porous medium (plasma layers). Numerical methods are discussed to solve such multi-scale and multi phase models and to obtain qualitative results for the delicate multiphysical processes in the chamber. We discuss a splitting analysis to couple such multiphysical problems. The verification of such a complicated model is done with real-life experiments for single species. Such numerical simulations help to economize on expensive physical experiments and obtain control mechanisms for the delicate deposition process.

Deposition Processes

MRS Bulletin ◽  
1988 ◽  
Vol 13 (12) ◽  
pp. 29-32
Author(s):  
Russell Messier
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Science And Technology ◽  
Chemical Vapor ◽  
Deposition Process ◽  
General Direction ◽  
Deposition Processes ◽  
Characterization Property ◽  
Micro Structures

My introduction in the November MRS BULLETIN to this two-part series on deposition processes discussed the extensive use of thin films in science and technology. That it takes two issues and nine articles to cover this topic — and by no means exhaustively — is testimony to the manifold ways thin films are prepared.If all deposition processes resulted in the same product, then such extensive coverage would be redundant and unnecessary. Thin films, however, cover a virtual infinity of free energy states — and related crystal structures, micro-structures, defects, defect densities, impurities, compositions, composition modulations, etc. — that are sensitive to the particular deposition process and its conditions. It is this richness of choice that makes thin film science and technology both exciting and, at times, frustrating.Along with the freedom to extensively vary thin film characteristics, resulting properties and applications comes the difficulty in understanding preparation-characterization-property relations in enough detail to control and reproduce deposition processes.The November articles covered molecular dynamics computer modeling of nucleation and growth processes, molecular beam epitaxy, organometallic vapor phase epitaxy, and chemical vapor deposition. This month's articles continue the sequence of ways to deposit films, the general direction being toward lower substrate temperatures. Plasmas, which offer both increased flexibility and complexity, are primarily considered. The last article covers thermal plasmas, not to control the vapor deposition but to melt powders which result in a multiple splat-quenched array of particles that form coatings important to industry.

Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition

2001 ◽  
Vol 16 (8) ◽  
pp. 2192-2195 ◽  
Author(s):  
Jaydeb Goswami ◽  
Chang-Gong Wang ◽  
Prashant Majhi ◽  
Yong-Wook Shin ◽  
Sandwip K. Dey
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Wide Range ◽  
Liquid Source ◽  
Metalorganic Chemical

Highly (111)-oriented and conformal iridium (Ir) films were deposited by a liquid source metalorganic-chemical-vapor-deposition process on various substrates. An oxygen-assisted pyrolysis of (methylcyclopentadienyl) (1,5-cyclooctadiene) Ir precursor at a wide range of substrate temperatures (Tsub) between 300 and 700 °C was used. At a low Tsub of 350 °C, the randomly oriented polycrystalline films exhibited an I111/I200 x-ray intensity ratio of 6. However, the films deposited at Tsub = 700 °C on native SiO2 and amorphous SiO2 surfaces were highly oriented with the I111/I200 ratios of 277 and 186, respectively. The transmission electron microscopy study revealed continuous, dense, and faceted microstructures of Ir films. Also, the step coverage of Ir on TiN (64%) was higher than that on amorphous SiO2 (50%) surfaces.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

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