Computational Study of Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Film

2008 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Processing Conditions ◽  
Wide Range

In this study, a comprehensive transport model is developed for Halide Chemical Vapor Deposition (HCVD) system which includes gas dynamics, heat and mass transfer, gas-phase and surface chemistry, and radio-frequency induction heating. This model addresses transport of multiple chemical species in high temperature environment with large temperature difference and complex chemical reactions in gas-phase and on the deposition surface. Numerical modeling of the deposition process in a horizontal hot-wall reactor using SiCl4/C3H8/H2 as precursors has been performed over a wide range of operational parameters to quantify the effects of processing parameters on the film growth. The simulations of the deposition process provide detailed information on the gas-phase composition as well as the distributions of gas velocity and temperature in the reactor. The deposition rate on the substrate surface is also predicted. The results illustrate that deposition temperature and the flow rate of carrier gas play an important role in determining the processing conditions and deposition rate. A high concentration of HCl exists in the growth chamber and the etching of the SiC films by HCl has significant effect on the deposition rate. The modeling approach can be further used to improve reactor design and optimization of processing conditions.

Theoretical Studies of Gravitational Effects in Chemical Vapor Deposition

1986 ◽  
Vol 87 ◽  
Author(s):  
Charter D. Stinespring ◽  
Charles E. Kolb ◽  
Kurt D. Annen
Keyword(s):  
Chemical Vapor Deposition ◽  
Mass Transport ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Fluid Properties ◽  
Convective Fluid ◽  
Phase Chemistry

AbstractChemical Vapor Deposition (CVD) processes are generally carried out under large temperature gradients. These gradients, temperature dependent fluid properties, and the earth's gravitational field give rise to buoyancy-driven free convective fluid flow which augments heat and mass transport in the CVD reactor. Under certain conditions, this free convective flow may alter the gas phase chemistry associated with the deposition process. In order to understand these free convective effects and their implications for the deposition process, a computational model describing the combined effects of fluid mechanics and chemistry has been developed. This model uses a coupled chemical equilibrium/mass transport code in conjunction with a 2-D elliptic fluid dynamics code to describe gas phase species profiles and deposition rates. This paper briefly describes the development of the model, its use, and the results of typical calculations.

Improved Copper Chemical Vapor Deposition Process by Applying Substrate Bias

1996 ◽  
Vol 427 ◽  
Author(s):  
Won-Jun Lee ◽  
Sa-Kyun Rha ◽  
Seung-Yun Lee ◽  
Dong-Won Kim ◽  
Soung-Soon Chun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Copper Film ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Substrate Bias ◽  
Value Analysis ◽  
Poling Direction ◽  
Negative Substrate Bias

AbstractThe substrate bias was applied during the chemical vapor deposition (CVD) process of copper in an effort to change the adsorption behaviors of the reactant. Copper films were deposited on TiN and SiO2 from Cu(hfac)(tmvs) with the substrate bias and without one. The surface morphology, the thickness, the sheet resistance and the purity of the films were investigated. When the negative substrate bias of -30 V was applied to the substrate, the deposition rate of copper increased both on TiN and SiO2. No change was observed in the chemical composition of the copper film deposited with substrate bias in comparison with that of the copper film deposited with no bias. It was calculated that Cu(hfac) has the dipole moment whose direction is from copper to hfac. Under the d. c.electric field, dipole tends to align along the poling direction. Resulting from the overlapping population (OP) value analysis, the improvement of deposition rate under negative substrate bias was explained due to the adsorption of copper atom in Cu(hfac) species directly onto the substrate by the electric field applied between the substrate and the gas showerhead.

Investigation of Boron Nitride Prepared by Low Pressure Chemical Vapor Deposition at 650~1200 °C

2013 ◽  
Vol 537 ◽  
pp. 58-62 ◽  
Author(s):  
Fang Ye ◽  
Li Tong Zhang ◽  
Yong Sheng Liu ◽  
Meng Su ◽  
Lai Fei Cheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Reaction System ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Large Temperature ◽  
Pressure Chemical ◽  
Crystallization Degree

Boron nitride (BN) coatings were deposited on carbon substrates by low pressure chemical vapor deposition (LPCVD) in a large temperature range of 650~1200 °C, employing BCl3-NH3-H2 reaction system. The effects of depositing temperature on the yield, control step of deposition progress (deposition mechanism), microstructure, and crystallization degree of BN coating were investigated. Results show that BN deposition rate first increases and then decreases as the rising temperature and the maximum deposition rate occurs at 900~1000 °C. By the determination of the Arrenius relationship, there are three temperature regions with different active energies and controlled by different deposition mechanisms, i.e. chemical reaction, mass transport and depletion of reactants. Through the surface morphology observation by scanning electron microscopy (SEM), chemical composition analyses by energy dispersion spectroscopy (EDS) and crystallization degree and grain size comparison by Raman spectroscopy, it can be drawn that interphase-used BN is suitable to be deposited at 1000 °C.

Gas-phase diffusion and surface reaction as limiting mechanisms in the aerosol-assisted chemical vapor deposition of TiO2 films from titanium diisopropoxide

2006 ◽  
Vol 21 (12) ◽  
pp. 3205-3209 ◽  
Author(s):  
A. Conde-Gallardo ◽  
M. Guerrero ◽  
R. Fragoso ◽  
N. Castillo
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Surface Reaction ◽  
Crystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Thermal Reaction ◽  
Phase Diffusion ◽  
Wide Range

Titanium dioxide thin films were deposited on crystalline silicon (100) substrates by delivering a liquid aerosol of titanium-diisopropoxide. The evidence of a metalorganic chemical vapor deposition process observed in the crystalline and morphological features of the films is strongly supported by the behavior of the growth rate rg as a function of the deposition temperature. The rg line shape indicates that in a wide range of temperatures (∼180–400 °C), the film formation is limited by both gas-phase diffusion of some molecular species toward the substrate surface and the thermal reaction of those species on that surface. The activation energy EA that characterizes the surface reaction depends somewhat on the precursor concentration; a fitting procedure to an equation that takes into account both limiting mechanisms (gas-phase diffusion + surface reaction) yields EA ≃ 27.6 kJ/mol.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using Radial Basis Function (RBF) for various functions which are related to the deposition rate and uniformity of the thin films are studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Computational Study of Surface Deposition and Gas Phase Powder Formation during Spinel Chemical Vapor Deposition Processes

2013 ◽  
Vol 52 (44) ◽  
pp. 15270-15280 ◽  
Author(s):  
Hangyao Wang ◽  
Heather A. G. Stern ◽  
Debashis Chakraborty ◽  
Hua Bai ◽  
Vincent DiFilippo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Surface Deposition ◽  
Powder Formation ◽  
Deposition Processes

Effects of Feed Gas Composition and Catalyst Thickness on Carbon Nanotube and Nanofiber Synthesis by Plasma Enhanced Chemical Vapor Deposition

2008 ◽  
Vol 8 (6) ◽  
pp. 3068-3076 ◽  
Author(s):  
R. K. Garg ◽  
S. S. Kim ◽  
D. B. Hash ◽  
J. P. Gore ◽  
T. S. Fisher
Keyword(s):  
Carbon Nanotubes ◽  
Phase Composition ◽  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Gas Composition ◽  
Hydrogen Mixture

Many engineering applications require carbon nanotubes with specific characteristics such as wall structure, chirality and alignment. However, precise control of nanotube properties grown to application specifications remains a significant challenge. Plasma-enhanced chemical vapor deposition (PECVD) offers a variety of advantages in the synthesis of carbon nanotubes in that several important synthesis parameters can be controlled independently. This paper reports an experimental study of the effects of reacting gas composition (percentage methane in hydrogen) and catalyst film thickness on carbon nanotube (CNT) growth and a computational study of gas-phase composition for the inlet conditions of experimentally observed carbon nanotube growth using different chemical reaction mechanisms. The simulations seek to explain the observed effects of reacting gas composition and to identify the precursors for CNT formation. The experimental results indicate that gas-phase composition significantly affects the synthesized material, which is shown to be randomly aligned nanotube and nanofiber mats for relatively methane-rich inlet gas mixtures and non-tubular carbon for methane-lean incoming mixtures. The simulation results suggest that inlet methane-hydrogen mixture coverts to an acetylene-methane-hydrogen mixture with minor amounts of ethylene, hydrogen atom, and methyl radical. Acetylene appears to be the indicator species for solid carbon formation. The simulations also show that inlet methane-hydrogen mixture does not produce enough gas-phase precursors needed to form quality CNTs below 5% CH4 concentrations in the inlet stream.

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