Spatial Concentrations of Silicon Atoms in RF Discharges of Silane

1984 ◽  
Vol 38 ◽  
Author(s):  
R. M. Roth ◽  
K. G. Spears ◽  
G. Wong
Keyword(s):  
Plasma Chemistry ◽  
Chamber Pressure ◽  
Capacitively Coupled ◽  
Sheath Region ◽  
Rf Discharges ◽  
Sheath Formation ◽  
Rf Glow Discharge ◽  
Dc Bias ◽  
Anode Sheath ◽  
State Concentration

AbstractA capacitively coupled rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laserinduced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. The dc bias voltage, silane mole fractions, flow rates, and chamber pressure were all varied to establish the sensitivity of the silane profiles. The existing theory of sheath formation is used to qualitatively understand the existence of sharp spatial boundaries and the sensitivity of the anode sheath region to plasma chemistry.

Spatial Resolution of Small Particles in Silane Discharge

1984 ◽  
Vol 38 ◽  
Author(s):  
K. G. Spears ◽  
R. M. Roth
Keyword(s):  
Laser Light ◽  
Plasma Chemistry ◽  
Spatial Location ◽  
Film Deposition ◽  
Size Distributions ◽  
Small Particles ◽  
Capacitively Coupled ◽  
Multi Wavelength ◽  
Rf Glow Discharge ◽  
Deposition Processes

AbstractA capacitively coupled, rf glow discharge of silane in argon was studied with laser light scattering to determine the spatial concentration of small particles. Multi-wavelength scattering profiles have been obtained and are being analyzed to obtain size distributions as a function of spatial location. Very sharply defined particle zones can be found under some plasma conditions that are spatially related to the silicon atom profiles. We will report our results and attempt to qualitatively describe how these zones relate to plasma chemistry and film deposition processes.

Estimation of Ion Impact Energies and Electrode Self-Bias Voltage in Capacitive RF Discharges

1987 ◽  
Vol 98 ◽  
Author(s):  
S. E. Savas
Keyword(s):  
Bias Voltage ◽  
Capacitively Coupled ◽  
Ion Flow ◽  
Rf Discharges ◽  
Self Bias ◽  
Ion Energies ◽  
Bias Ratio ◽  
Ionization Model ◽  
Ion Impact ◽  
Impact Energies

ABSTRACTThe dependences of the electrode self-bias voltage and the ratio of ion energies on electrode area ratio are calculated for a model of capacitively coupled rf discharges. It is assumed that concentric spherical elecrodes with fluid-like radial ion flow adequately models the ion motion, that sheath impedances are dominant, and that ionization processes in the glow are due to ohmically heated electrons. Results show that the ratio of ion energies impacting the smaller electrode to those on the larger depends on the ratio of electrode areas in a more complex manner than a power law.The reason for this is that sheath impedances are more resistive or capacitive at different times in the rf cycle. The self-bias ratio is found to depend relatively little on the ionization model or the pressure but differs substantially from the “power law” result. The agreement of measurements with the model is fairly good.

scholarly journals Analysis of Optical Emission Spectra during Nitrogen-Plasma Treatment to Control the Wettability of Polystyrene Surface

2021 ◽  
Vol 20 (3) ◽  
Author(s):  
Masruroh ◽  
Dionysius J. D. H. Santjojo ◽  
Ahmad Taufiq
Keyword(s):  
Plasma Treatment ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Nitrogen Plasma ◽  
Chamber Pressure ◽  
Treatment Results ◽  
Plasma Species ◽  
Dc Bias ◽  
Nitrogen Treatment

In this work, we apply optical emission spectroscopy to investigate active plasma species to study that plasma nitrogen treatment affects polystyrene surfaces. Data concerning these active plasma species are crucial for exploring the polystyrene layer's functionality deposited on quartz crystal microbalance (QCM) surface. Wettability function in biosensors development is essential aspects for biomolecule immobilization. The surface of the polystyrene layer was modified by plasma nitrogen treatment. The process parameters affecting plasma species and characteristic, and hence the treatment results studied in this work were chamber pressure, flow rate, and DC bias. The plasma analysis was conducted by optical emission spectroscopy. The spectroscopy was utilized to predict the active species of plasma, the electron temperature Te and the electron density Ne. The dominant reactive species was N2+ which go through different plasma interactions and on the polystyrene surface depending on the DC bias voltage, the nitrogen- gas flow rate, and the chamber pressure. The plasma treatment results suggest that the ion bombardment was the dominant mechanism that changes the polystyrene's surface. The plasma behavior and surface interactions were found complex with the variation of the process parameter. Keywords: Electron density, Electron temperature, OES, Nitrogen-plasma treatment, Wettability

Deposition of organosilicon coatings from trimethylsilyl acetate and oxygen gases in capacitively coupled RF glow discharge

2020 ◽  
Vol 149 ◽  
pp. 105927
Author(s):  
Štěpánka Kelarová ◽  
Vojtěch Homola ◽  
Monika Stupavká ◽  
Martin Čermák ◽  
Jiří Vohánka ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Capacitively Coupled ◽  
Rf Glow Discharge

The Formation and Behavior of Particles in Silane Discharges

1999 ◽  
Vol 557 ◽  
Author(s):  
Alan Gallagher
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Particle Density ◽  
Plasma Chemistry ◽  
Particle Growth ◽  
Rf Plasma ◽  
Electrode Gap ◽  
Plasma Parameters ◽  
Rf Discharges ◽  
And Behavior

AbstractParticle growth in silane RF discharges, and the incorporation of particles into hydrogenated-amorphous-silicon (a-Si:H) devices is described. These particles have a structure similar to a-Si:H, but their incorporation into the device is believed to yield harmful voids and interfaces. Measurements of particle density and growth in a silane RF plasma, for particle diameters of 8-50 nm, are described. This particle growth rate is very rapid, and decreases in density during the growth indicate a major flux of these size particles to the substrate. Particle densities are a very strong function of pressure, film growth rate and electrode gap, increasing orders of magnitude for small increases in each parameter. A full plasma- chemistry model for particle growth from SiHm radicals and ions has been developed, and is outlined. It yields particle densities and growth rates, as a function of plasma parameters, which are in qualitative agreement with the data. It also indicates that, in addition to the diameter >2 nm particles that have been observed in films, a very large flux of SixH,, molecular radicals with × >1 also incorporate into the film. It appears that these large radicals yield more than 1% of the film for typical device-deposition conditions, so this may have a serious effect on device properties.

Modeling and Optimization of Process Parameters of a DF-CCP Etcher Chamber

2013 ◽  
Vol 572 ◽  
pp. 213-216 ◽  
Author(s):  
Xia Xu ◽  
Juan Feng ◽  
Ling Tian
Keyword(s):  
Process Parameters ◽  
Process Model ◽  
Orthogonal Design ◽  
Low Frequency ◽  
High Plasma ◽  
Chamber Pressure ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Optimization Of Process Parameters ◽  
Center Edge

Dual-frequency capacitively coupled plasma (DF-CCP) etcher has become the mainstream in dielectric etcher. By building a 2D axisymmetric model of 300mm DF-CCP etcher in CFD-ACE+ software, plasma simulation experiments are carried out by orthogonal design. Then a process model based on simulation results is proposed to analysis influence of key process parameters including high frequency voltage, low frequency voltage, and chamber pressure and center/edge flow ratio on chamber plasma characteristics. Finally, to get high plasma uniformity and plasma density, process optimizations are carried out.

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