Hall Mobility in Strained SiGe p-Mosfets

1995 ◽  
Vol 379 ◽  
Author(s):  
L. Garchery ◽  
I. Sagnes ◽  
Y. Campidelli ◽  
M. Berenguer ◽  
P.A. Badoz ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Hall Mobility ◽  
Hole Mobility ◽  
Sige Layer ◽  
Cmos Integrated Circuits ◽  
Surface Scattering ◽  
Limiting Factors ◽  
Mos Transistors ◽  
Strained Sige

One of the limiting factors in the performance of future CMOS integrated circuits is the low hole mobility which causes the transconductance of p-channel transistors to be inferior to those of n-channel devices. One promising way of enhancing hole mobility is to introduce a buried SiGe layer under the gate of p-MOS transistors. The mobility improvement thus results from, i) reduction in surface scattering (by moving carriers away from scattering sites at the Si/SiO2 interface), and ii) higher in-plane hole mobility in biaxally strained SiGe layers.

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers

2010 ◽  
Vol 54 (4) ◽  
pp. 420-426 ◽  
Author(s):  
Philippe Gaubert ◽  
Akinobu Teramoto ◽  
Tadahiro Ohmi
Keyword(s):  
Hole Mobility ◽  
Silicon Wafers ◽  
Mos Transistors

High speed and highly efficient Si optical modulator with strained SiGe layer

2015 ◽  
Author(s):  
Junichi Fujikata ◽  
Masataka Noguchi ◽  
Younghyun Kim ◽  
Shigeki Takahashi ◽  
Takahiro Nakamura ◽  
...  
Keyword(s):  
High Speed ◽  
Sige Layer ◽  
Optical Modulator ◽  
Highly Efficient ◽  
Strained Sige

Hole mobility enhancement in uniaxially strained SiGe FINFETs: Analysis and prospects

2011 ◽  
Author(s):  
R. Bijesh ◽  
I. Ok ◽  
M. Baykan ◽  
C. Hobbs ◽  
P. Majhi ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Strained Sige

Si Optical Modulator with Strained SiGe Layer and Ge Photodetector with Lateral PIN Junction for 56 Gbaud Optical Transceiver

2019 ◽  
Author(s):  
J. Fujikata ◽  
J. Han ◽  
S. Takahashi ◽  
K. Kawashita ◽  
H. Ono ◽  
...  
Keyword(s):  
Sige Layer ◽  
Optical Modulator ◽  
Strained Sige

High-temperature leakage current suppression in CMOS integrated circuits

1989 ◽  
Vol 25 (17) ◽  
pp. 1133 ◽  
Author(s):  
S.E. Nordquist ◽  
J.W. Haslett ◽  
F.N. Trofimenkoff
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Leakage Current ◽  
Cmos Integrated Circuits

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

scholarly journals Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 50 ◽  
Author(s):  
Minoru Fujishima
Keyword(s):  
Integrated Circuits ◽  
Silicon Germanium ◽  
Cmos Integrated Circuits ◽  
Future Research ◽  
Wireless Transceivers ◽  
Terahertz Band ◽  
Silicon Integrated Circuits ◽  
Terahertz Communication ◽  
Bicmos Integrated Circuits ◽  
Silicon Cmos

In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future.

Sign in / Sign up

Export Citation Format

Share Document