Photoelastic Waveguides Using Strain-Compensated InAsP/InGaP Multi-Quantum-Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
Q. Z. Liu ◽  
X. B. Mei ◽  
L. S. Yu ◽  
C. W. Tu ◽  
S. S. Lau
Keyword(s):  
Quantum Wells ◽  
Optical Waveguides ◽  
Intensity Ratio ◽  
Semiconductor Heterostructures ◽  
Anisotropic Property ◽  
Light Confinement ◽  
Te Mode

ABSTRACTPhotoelastic optical waveguides using strain-compensated InAsP/InGaP multiplequantum-well (MQW) have been fabricated. Lateral light confinement for waveguiding is achieved by introducing stress into semiconductor heterostructures with stable WNi surface stressor stripes. The waveguides have been characterized at both 1.52 μm and 1.32 μm wavelength in term of TE/TM intensity ratio. At 1.52 μm, the waveguides favor the propagation of TE mode, and the TE/TM intensity ratio can be as large as 15 dB. At 1.32 μm, the TE and TM intensity can be comparable. Anisotropy of waveguides fabricated along [110] or [110] directions has also been observed in term of TE/TM intensity ratio, which suggests the presence of anisotropic property of the strain-compensated MQW.

scholarly journals ANALYSIS OF OPTICAL WAVEGUIDES WITH ARBITRARY INDEX PROFILE USING AN IMMERSED INTERFACE METHOD

2011 ◽  
Vol 22 (07) ◽  
pp. 687-710 ◽  
Author(s):  
THEODOROS P. HORIKIS
Keyword(s):  
Optical Waveguides ◽  
Eigenvalue Problems ◽  
Numerical Technique ◽  
Interface Problems ◽  
Index Profile ◽  
Immersed Interface Method ◽  
Immersed Interface ◽  
Light Confinement ◽  
Bragg Fibers ◽  
Matrix Eigenvalue Problems

A numerical technique is described that can efficiently compute solutions of interface problems. These are problems with data, such as the coefficients of differential equations, discontinuous or even singular across one or more interfaces. A prime example of these problems are optical waveguides, and as such the scheme is applied to Maxwell's equations as they are formulated to describe light confinement in Bragg fibers. It is based on standard finite differences appropriately modified to take into account all possible discontinuities across the waveguide's interfaces due to the change of the refractive index. Second- and fourth-order schemes are described with additional adaptations to handle matrix eigenvalue problems, demanding geometries and defects.

THE PAULI PRINCIPLE AND QUANTUM TRANSPORT

1994 ◽  
Vol 08 (21n22) ◽  
pp. 1377-1385 ◽  
Author(s):  
S.A. GURVITZ ◽  
H.J. LIPKIN ◽  
Ya. S. PRAGER
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Fock Space ◽  
Pauli Principle ◽  
Semiconductor Heterostructures ◽  
Rate Equations ◽  
Semiconductor Quantum Wells ◽  
Occupation Numbers ◽  
The One ◽  
Space Wave

A new method using Fock space wave functions is proposed for studying resonant tunneling in semiconductor quantum wells. The use of binary occupation numbers as dynamical variables, rather than properties of individual electrons, manifestly takes account of electron statistics, which enables investigation of the influence of the Pauli principle on resonant tunneling in the presence of inelastic scattering. Applied to the evaluation of the resonant current in semiconductor heterostructures, our approach predicts considerable deviations from the one-electron and rate equations pictures.

Dynamics of excitonic polaritons in semiconductor heterostructures with quantum wells

2017 ◽  
Author(s):  
A. V. Trifonov ◽  
Yu. P. Efimov ◽  
S. A. Eliseev ◽  
V. A. Lovtcius ◽  
P. Yu. Shapochkin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Semiconductor Heterostructures

DYNAMICS OF SPATIALLY INDIRECT EXCITONS IN SEMICONDUCTOR HETEROSTRUCTURES IN MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1574-1578
Author(s):  
KAZUHITO UCHIDA ◽  
NOBORU MIURA ◽  
YASUHIRO SHIRAKI
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Excitation Power ◽  
Semiconductor Heterostructures ◽  
Type Ii ◽  
Power Dependence ◽  
Indirect Excitons ◽  
Peak Energy ◽  
Excitation Laser ◽  
The Magnetic Field

Magnetophotoluminescence from spatially separated excitons in type-II semiconductor heterostructures, GaP/AlP neighboring confinement structures (NCSs) have been investigated. The sample studied consists of adjacent GaP and AlP quantum wells sandwiched between AlGaP barriers. The excitation power dependence and the well thickness dependence of the exciton PL are studied in magnetic fields applied perpendicular to the heterointerfaces. Compared to the thinner NCS, the magneto-PL of the wider NCS is strongly modified by the excitation power; the magnetic field dependence of the PL peak energy clearly changes from the anomalous red-shifts into the diamagnetic shifts with increasing excitation laser power.

scholarly journals Fabrication of Sub-Micron Polymer Waveguides through Two-Photon Polymerization in Polydimethylsiloxane

Polymers ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2485 ◽  
Author(s):  
Giulia Panusa ◽  
Ye Pu ◽  
Jieping Wang ◽  
Christophe Moser ◽  
Demetri Psaltis
Keyword(s):  
Optical Waveguides ◽  
Transmission Loss ◽  
Vital Role ◽  
Core Size ◽  
Low Loss ◽  
Two Photon ◽  
Light Confinement ◽  
Index Contrast ◽  
Controllable Fabrication ◽  
Two Photon Polymerization

Flexible ultra-compact low-loss optical waveguides play a vital role in the development of soft photonics. The search for suitable materials and innovative fabrication techniques to achieve low loss long polymer optical waveguides and interconnects has proven to be challenging. In this paper, we demonstrate the fabrication of submicron optical waveguides in polydimethylsiloxane (PDMS) using divinylbenzene (DVB) as the photopolymerizable monomer through two-photon polymerization (2PP). We show that the commercial oxime ester photoinitiator Irgacure OXE02 is suitable for triggering the DVB photopolymerization, resulting in a stable and controllable fabrication process for the fabrication of defect-free, 5-cm long waveguides. We further explore a multi-track fabrication strategy to enlarge the waveguide core size up to ~3 μm for better light confinement and reduced cross-talk. In these waveguides, we measured a refractive index contrast on the order of 0.005 and a transmission loss of 0.1 dB/cm at 710 nm wavelength.

POLARIZATION EFFECTS IN NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

2000 ◽  
Vol 10 (01) ◽  
pp. 25-37 ◽  
Author(s):  
HADIS MORKOÇ ◽  
ROBERTO CINGOLANI ◽  
F. DELLA SALA ◽  
A. DICARLO ◽  
P. LUGLI ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Wide Bandgap ◽  
Semiconductor Heterostructures ◽  
Stable Form ◽  
Multiple Quantum ◽  
Nitride Semiconductors ◽  
Polarization Effects ◽  
Polarization Charge ◽  
Ionic Nature ◽  
High Level

Wide bandgap nitride semiconductors have recently attracted a high level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum and favorable transport properties, coupled with large dielectric strengths which pave the way for excellent emitters, detectors, and power amplifiers. Owing to the ionic nature of these semiconductors coupled with the lack of inversion symmetry in the wurtzitic form, which is the more stable form, spontaneous polarization charge at heterointerfaces and piezoelectric polarization charge due to strain are induced. In this paper, following a description of these effects, their impact on sample modulation-doped structures and multiple quantum wells are discussed.

Optical Waveguides in GaAs/AlGaAs MQW Structures Formed by Silicon Induced Quantum Well Mixing

1989 ◽  
Vol 152 ◽  
Author(s):  
A. C. Wismayer ◽  
B. L. Weiss ◽  
J. S. Roberts
Keyword(s):  
Quantum Well ◽  
Annealing Time ◽  
Optical Waveguides ◽  
Propagation Loss ◽  
Mode Propagation ◽  
Furnace Annealing ◽  
Te Mode ◽  
Multiquantum Well

ABSTRACTSi implantation followed by furnace annealing has been used to produce the mixing of GaAs/AlGaAs multiquantum well (MQW) structures grown by MOVPE. Masked implants have been used to fabricate stripe optical waveguides. Results are presented here for the effect of the ion dose and the annealing time and it is shown that complete mixing occurs for a 1015 cm−2 dose of 500 keV Si+ after annealing at 750 °C for two hours. Waveguides fabricated using this process showed a minimum TE mode propagation loss of 33 dB cm−1 at a wavelength of 1.15 μm.

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