POLARIZATION EFFECTS IN NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

2000 ◽  
Vol 10 (01) ◽  
pp. 25-37 ◽  
Author(s):  
HADIS MORKOÇ ◽  
ROBERTO CINGOLANI ◽  
F. DELLA SALA ◽  
A. DICARLO ◽  
P. LUGLI ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Wide Bandgap ◽  
Semiconductor Heterostructures ◽  
Stable Form ◽  
Multiple Quantum ◽  
Nitride Semiconductors ◽  
Polarization Effects ◽  
Polarization Charge ◽  
Ionic Nature ◽  
High Level

Wide bandgap nitride semiconductors have recently attracted a high level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum and favorable transport properties, coupled with large dielectric strengths which pave the way for excellent emitters, detectors, and power amplifiers. Owing to the ionic nature of these semiconductors coupled with the lack of inversion symmetry in the wurtzitic form, which is the more stable form, spontaneous polarization charge at heterointerfaces and piezoelectric polarization charge due to strain are induced. In this paper, following a description of these effects, their impact on sample modulation-doped structures and multiple quantum wells are discussed.

scholarly journals Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

2001 ◽  
Vol 79 (26) ◽  
pp. 4375-4377 ◽  
Author(s):  
E. Kuokstis ◽  
J. Zhang ◽  
M.-Y. Ryu ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Polarization Effects

scholarly journals Material Properties of GaN in the Context of Electron Devices

1998 ◽  
Vol 537 ◽  
Author(s):  
H. Morkoç ◽  
R. Cingolani ◽  
W. Lambrecht ◽  
B. Gil ◽  
H.-X Jiang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Great Level ◽  
Material System ◽  
Nitride Semiconductors ◽  
Power Devices ◽  
Polarization Effects ◽  
Switching Power ◽  
Predicted Values

AbstractWide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.

scholarly journals Material Properties of GaN in the Context of Electron Devices

1999 ◽  
Vol 4 (S1) ◽  
pp. 18-26 ◽  
Author(s):  
H. Morkoç ◽  
R. Cingolani ◽  
W. Lambrecht ◽  
B. Gil ◽  
H.-X Jiang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Great Level ◽  
Material System ◽  
Nitride Semiconductors ◽  
Power Devices ◽  
Polarization Effects ◽  
Switching Power ◽  
Predicted Values

Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.

scholarly journals A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Science ◽  
2019 ◽  
Vol 365 (6460) ◽  
pp. 1454-1457 ◽  
Author(s):  
Reet Chaudhuri ◽  
Samuel James Bader ◽  
Zhen Chen ◽  
David A. Muller ◽  
Huili Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Quantum Wells ◽  
Electron Gas ◽  
Wide Bandgap ◽  
Two Dimensional ◽  
Cryogenic Temperatures ◽  
Nitride Semiconductors ◽  
Valence Band Structure ◽  
Bandgap Semiconductors ◽  
P Type

A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The observed results provide a probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces.

scholarly journals Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

2002 ◽  
Vol 81 (22) ◽  
pp. 4130-4132 ◽  
Author(s):  
E. Kuokstis ◽  
C. Q. Chen ◽  
M. E. Gaevski ◽  
W. H. Sun ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Polarization Effects
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