Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

1995 ◽  
Vol 378 ◽  
Author(s):  
M Benamara ◽  
A Rocher ◽  
A Laporte ◽  
G Sarrabayrouse ◽  
L Lescouzères ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Silicon Oxide ◽  
General Structure ◽  
Interface Plane ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Direct Wafer Bonding ◽  
Preferential Nucleation ◽  
Microscopy Techniques

AbstractThe so-called Direct Wafer Bonding (DWB) technique opens new possibilities for the electronic industry but still suffers from the poor knowledge we have of the microstructure of these interfaces and hence of their electrical activity. In this work, we have extensively used Transmission Electron Microscopy techniques in plan-view and cross-section to identify the structure of the interfaces found between two bonded silicon wafers. The general structure of these interfaces is that of a perfect grain boundary and evidently depends on the misorientation between the two bonded wafers. A twist component in the range 0>θ>13˚ creates a square network of pure screw dislocation whereas an unavoidable tilt component (<0.5˚) is compensated by a periodic array of 60˚ dislocation lines perpendicular to the tilt direction. Therefore, the regularity of these networks can be disrupted by the presence of steps (of up to several nanometers) in the interface plane. Silicon oxide precipitates are seen heterogeneously distributed on the interface with preferential nucleation sites on the dislocations.

Silicon Surface Morphology and the Reaction of Silicon with Oxygen

1992 ◽  
Vol 259 ◽  
Author(s):  
Frances M. Ross ◽  
J. Murray Gibson
Keyword(s):  
Silicon Surface ◽  
Silicon Oxide ◽  
Silicon Surfaces ◽  
Interface Morphology ◽  
Oxidation Reactions ◽  
Oxide Interface ◽  
Plan View ◽  
Buried Interfaces ◽  
Transmission Electron ◽  
Microscopy Techniques

ABSTRACTWe discuss the measurement of the morphology of exposed surfaces and buried interfaces using plan view transmission electron microscopy techniques. We have observed the evolution of the silicon/oxide interface during both oxidation and oxygen etching of the Si (111) surface. We describe the interface morphology, the mechanisms of these oxidation reactions and the implications of these results for the processing of silicon surfaces.

scholarly journals Transmission Electron Microscopy Studies of Electrical Active GaAs/GaN Interface Obtained by Wafer Bonding

2002 ◽  
Vol 722 ◽  
Author(s):  
J. Jasinski ◽  
Z. Liliental-Weber ◽  
S. Estrada ◽  
E. Hu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Wafer Bonding ◽  
Native Oxide ◽  
Interface Area ◽  
Plan View ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Direct Wafer Bonding ◽  
Expansion Coefficients

AbstractTransmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) studies of GaAs/GaN interfaces, obtained by direct wafer bonding, are presented. TEM observations show that most of the interface area was well bonded. A thin oxide layer, confirmed by EDX, was present at the interface in the well-bonded regions. Plan-view TEM studies showed the presence of two dislocation networks in such regions. They formed to accommodate: (1) tilt between bonded crystals and (2) strain, which appeared during sample cooling due to mismatch in thermal expansion coefficients. Asymmetrical, often elongated, cavities, formed on the GaAs side, were present at the interface between the well-bonded regions. It was shown by EDX that the walls of these cavities are covered with native oxide.

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory

2011 ◽  
Vol 178-179 ◽  
pp. 489-494
Author(s):  
Nikolay Cherkashin ◽  
Oleg Kononchuk ◽  
Martin Hÿtch
Keyword(s):  
Wafer Bonding ◽  
Geometric Phase ◽  
Lattice Theory ◽  
Covalent Bonding ◽  
High Angle ◽  
Experimental Identification ◽  
Transmission Electron ◽  
Direct Wafer Bonding ◽  
Geometric Phase Analysis ◽  
High Resolution Tem

High angle close to 90° tilt Si boundary created by direct wafer bonding (DWB) using SmartCut® technology is studied in this work. Experimental identification of defects and morphologies at the interface is realized using conventional transmission electron microscopy (TEM) and geometric phase analysis (GPA) of high-resolution TEM images. Atom reconstruction of the interface along the direction is carried out within the frame of the O-lattice theory. We demonstrate that to preserve covalent bonding across the interface it should consist of facets intersected by a maximum of six planes with three 90° Shockley dislocations per facet. For a long enough interface the formation of Frank dislocations is predicted with a period equal 6 times that of Shockley dislocations. Long range undulations of the interface are shown to be related directly to a deviation from exact 90° tilt of the layer with respect to the substrate.

Mechanism of Thermal Silicon Oxide Direct Wafer Bonding

2009 ◽  
Vol 12 (10) ◽  
pp. H373 ◽  
Author(s):  
C. Ventosa ◽  
C. Morales ◽  
L. Libralesso ◽  
F. Fournel ◽  
A. M. Papon ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Silicon Oxide ◽  
Direct Wafer Bonding

Direct Wafer Bonding of Preamorphized Silicon Wafers.

1995 ◽  
Vol 378 ◽  
Author(s):  
A. Laporte ◽  
G. Sarrabayrouse ◽  
M. Benamara ◽  
A. Claverie ◽  
A. Rocher ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
General Structure ◽  
Striking Difference ◽  
Interfacial Region ◽  
High Dose ◽  
Extended Defects ◽  
Electrical Characteristics ◽  
Surface Layers ◽  
Tem Analysis ◽  
Direct Wafer Bonding

AbstractThis paper presents the comparison of the structural and electrical characteristics of Si/Si bonded interfaces depending on whether the surface layers were rendered amorphous by high dose ion implantation prior to annealing or not. While the general structure of the interfaces is the same when the wafers are preamorphized more precipitates are seen in the interface along with a few extended defects propagating into the volume. The most striking difference between both procedures is that the Spreading Resistance profile is more complicated in shape and difficult to master in the case of preamorphized wafers. Careful TEM analysis shows that only in this case the interfacial region is stressed in contrast with the fully relaxed structure obtained by direct bonding of crystalline wafers.For these reasons, there is little chance that the preamorphization technique will benefit to the bonding procedure of direct Si wafers.

Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories

2004 ◽  
Vol 830 ◽  
Author(s):  
Rosaria A. Puglisi ◽  
Giuseppe Nicotra ◽  
Salvatore Lombardo ◽  
Barbara De Salvo ◽  
Cosimo Gerardi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Adatom Diffusion ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Oxide Substrates ◽  
Capture Mechanism ◽  
New Si

ABSTRACTA systematic study on the Si dot formation after chemical vapor deposition on silicon oxide substrates is presented. The process has been followed from the early stages of the dot formation up to 25% of coverages. Structural characterization has been performed by means of energy filtered transmission electron microscopy, which allowed us to observe dot sizes down to 0.5 nm in radius. The nanodots are shown to be surrounded by a depleted zone, where no new Si dots are observed to nucleate. This has been attributed to the adatoms capture mechanism by pre-existing dots, during the deposition. The dot radius and the capture size are shown to collapse onto the same curve, thus indicating the scaling behavior of the process. The adatom diffusion process is shown to restrict the number of nucleation sites, the final dot size and the dot position, thus driving the process toward partial self-order.

ATEM investigation of experimentally annealed sillimanite: new constraints for the SiO2–Al2O3 join

2000 ◽  
Vol 64 (2) ◽  
pp. 247-254 ◽  
Author(s):  
P. Raterron ◽  
M. Carpenter ◽  
J.-C. Doukhan
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Phase Diagram ◽  
Triple Junctions ◽  
Defect Model ◽  
Point Defect Model ◽  
Partial Melt ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Preferential Nucleation

AbstractFour samples of Fe-bearing prismatic sillimanite, containing ∼1 wt.% Fe2O3, were annealed experimentally at temperatures of 1465 and 1675°C, and pressures between 1 atm and 30 kbar. Transmission electron microscopy (TEM) and analytical TEM (ATEM) investigation of the samples reveal that the starting material partly transformed into mullite during the annealing, and that this process was assisted by partial melting. The exsolved partial melt (now a glass), observed at triple junctions and in the form of small precipitates (∼10–1000 nm in size) within the sillimanite matrix, contains >80 wt.% SiO2. It also contains ∼11 wt.% Al2O3, some FeO and detectable amounts of K2O and CaO. Dissociated c dislocations in sillimanite are preferential nucleation sites for SiO2-rich precipitates. The equilibrium compositions of residual sillimanite-mullite were measured with a 2 nm wide probe at the interface with the SiO2-rich glass in each sample after heat treatment. We used these equilibrium compositions to constrain the parameters of a point defect model for sillimanite mullitization proposed by Raterron et al. (1999). With the revised parameterization, it is now possible to calculate the position of the boundary between fields of mullite + melt and mullite in the SiO2–Al2O3 phase diagram, and to predict the effect of pressure on this boundary. However, to be used as a standard, this model still needs to be calibrated in the pure SiO2–Al2O3 system (without impurities such as iron).

Structural and Electrical Characterization of Hydrophobic Direct-Bonded Silicon Interfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
Gordon Tam ◽  
F. Secco d'Aragona ◽  
N. David Theodore
Keyword(s):  
Wafer Bonding ◽  
Electrical Characterization ◽  
Device Fabrication ◽  
High Resistivity ◽  
Electrical Behavior ◽  
Cross Sectional ◽  
Spreading Resistance ◽  
Bonded Interface ◽  
Transmission Electron ◽  
Direct Wafer Bonding

ABSTRACTDirect wafer bonding is a viable technique for fabricating high-voltage devices. An understanding of the microstructure and electrical behavior of the bonded interface is critical for device fabrication. In this paper, we investigated the microstructure of the silicon-to-silicon bonded interface using cross-sectional transmission electron microscopy and the corresponding electrical behavior using spreading resistance probing. Results indicate that oxide precipitates were present at the bonded interface when Czochralski silicon wafer were used in the process. Oxide precipitates were noticeably absent from the bonded interface when float zone wafers were bonded to each other. We find that oxide precipitates at the interface arise not due to the residual oxide at the surface prior to wafer bonding but due to gettering of oxygen from the Czochralski wafer. Spreading resistance measurements show occurrence of a high resistivity region at the bonding interface whether or not oxide precipitates are present.

scholarly journals Misfit Dislocations in Epitaxial Ni/Cu Bilayer and Cu/Ni/Cu Trilayer Thin Films

2001 ◽  
Vol 673 ◽  
Author(s):  
Tadashi Yamamoto ◽  
Amit Misra ◽  
Richard G. Hoagland ◽  
Mike Nastasi ◽  
Harriet Kung ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Thickness ◽  
Misfit Dislocation ◽  
Interface Plane ◽  
Misfit Dislocations ◽  
Strain Fields ◽  
Plan View ◽  
Transmission Electron ◽  
Dislocation Arrays ◽  
20 Nm

ABSTRACTMisfit dislocations at the interfaces of bilayer (Ni/Cu) and trilayer (Cu/Ni/Cu) thin films were examined by plan-view transmission electron microscopy (TEM). In the bilayers, the spacing of misfit dislocations was measured as a function of Ni layer thickness. The critical thickness, at which misfit dislocations start to appear with the loss of coherency, was found to be between 2 and 5 nm. The spacing of the misfit dislocations decreased with increasing Ni layer thickness and reached a plateau at the thickness of 30 nm. The minimum spacing is observed to be about 20 nm. A g·b analysis of the cross-grid of misfit dislocations revealed 90° Lomer dislocations of the <110>{001} type lying in the (001) interface plane at a relatively large thickness of the Ni layer, but 60° glide dislocations of the <110>{111} type at a relatively small thickness of the Ni layer. In the trilayers, misfit dislocations formed at both interfaces. The spacing of the misfit dislocation is in agreement with that of the bilayers with a similar Ni layer thickness. The misfit dislocation arrays at the two interfaces, having the same line directions, are 60° dislocations with edge components with opposite signs but are displaced with respect to each other in the two different interface planes. This suggests that interactions of the strain fields of the dislocations have a strong influence on their positions at the interface.

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