Mechanism of Thermal Silicon Oxide Direct Wafer Bonding

2009 ◽  
Vol 12 (10) ◽  
pp. H373 ◽  
Author(s):  
C. Ventosa ◽  
C. Morales ◽  
L. Libralesso ◽  
F. Fournel ◽  
A. M. Papon ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Silicon Oxide ◽  
Direct Wafer Bonding

Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

1995 ◽  
Vol 378 ◽  
Author(s):  
M Benamara ◽  
A Rocher ◽  
A Laporte ◽  
G Sarrabayrouse ◽  
L Lescouzères ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Silicon Oxide ◽  
General Structure ◽  
Interface Plane ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Direct Wafer Bonding ◽  
Preferential Nucleation ◽  
Microscopy Techniques

AbstractThe so-called Direct Wafer Bonding (DWB) technique opens new possibilities for the electronic industry but still suffers from the poor knowledge we have of the microstructure of these interfaces and hence of their electrical activity. In this work, we have extensively used Transmission Electron Microscopy techniques in plan-view and cross-section to identify the structure of the interfaces found between two bonded silicon wafers. The general structure of these interfaces is that of a perfect grain boundary and evidently depends on the misorientation between the two bonded wafers. A twist component in the range 0>θ>13˚ creates a square network of pure screw dislocation whereas an unavoidable tilt component (<0.5˚) is compensated by a periodic array of 60˚ dislocation lines perpendicular to the tilt direction. Therefore, the regularity of these networks can be disrupted by the presence of steps (of up to several nanometers) in the interface plane. Silicon oxide precipitates are seen heterogeneously distributed on the interface with preferential nucleation sites on the dislocations.

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas

Point defects generated by direct-wafer bonding of silicon

2002 ◽  
Vol 31 (2) ◽  
pp. 113-118 ◽  
Author(s):  
L. Dózsa ◽  
B. Szentpáli ◽  
D. Pasquariello ◽  
K. Hjort
Keyword(s):  
Point Defects ◽  
Wafer Bonding ◽  
Direct Wafer Bonding

New Generation of Structures Obtained by Direct Wafer Bonding of Processed Wafers

2019 ◽  
Vol 3 (6) ◽  
pp. 79-90 ◽  
Author(s):  
Bernard Aspar ◽  
Chrystelle Lagahe-Blanchard ◽  
Nicolas Sousbie ◽  
Jacques Margail ◽  
H. Moriceau
Keyword(s):  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
New Generation

Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding

1998 ◽  
Vol 19 (1-4) ◽  
pp. 95-109 ◽  
Author(s):  
Marin Alexe ◽  
James F. Scott ◽  
Alain Pignolet ◽  
Dietrich Hesse ◽  
Ulrich Gösele
Keyword(s):  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Silicon Heterostructures

(Invited) Water Transport Along Si/Si Direct Wafer Bonding Interfaces

2018 ◽  
Vol 86 (5) ◽  
pp. 39-47
Author(s):  
François Rieutord ◽  
Samuel Tardif ◽  
Ivan Nikitskiy ◽  
Frank Fournel ◽  
Marwan Tedjini ◽  
...  
Keyword(s):  
Water Transport ◽  
Wafer Bonding ◽  
Direct Wafer Bonding
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