Role of misfit dislocations on pseudomorphic high electron mobility transistors

1995 ◽  
Vol 66 (6) ◽  
pp. 748-750 ◽  
Author(s):  
M. Meshkinpour ◽  
M. S. Goorsky ◽  
G. Chu ◽  
D. C. Streit ◽  
T. R. Block ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

2011 ◽  
Vol 99 (22) ◽  
pp. 223506 ◽  
Author(s):  
Feng Gao ◽  
Bin Lu ◽  
Libing Li ◽  
Stephen Kaun ◽  
James S. Speck ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

HIGH MAGNETIC FIELD IN THz PLASMA WAVE DETECTION BY HIGH ELECTRON MOBILITY TRANSISTORS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 3029-3034 ◽  
Author(s):  
M. SAKOWICZ ◽  
J. ŁUSAKOWSKI ◽  
K. KARPIERZ ◽  
M. GRYNBERG ◽  
G. VALUSIS
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Plasma ◽  
High Electron ◽  
Resonance Transition ◽  
Transistor Channel ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Shubnikov De Haas Oscillations

The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs / AlGaAs and GaN / AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative d S/ d UGS. Shubnikov - de-Haas oscillations (SdHO) of both S and d S/ d UGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and d S/ d UGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs / GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors

2013 ◽  
Vol 10 (5) ◽  
pp. 794-798 ◽  
Author(s):  
Shubhajit Mukherjee ◽  
Yevgeny Puzyrev ◽  
John Hinckley ◽  
Ronald D. Schrimpf ◽  
Daniel M. Fleetwood ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Hot Carrier ◽  
Electron Mobility Transistors ◽  
Hot Carrier Degradation
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