Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering

2013 ◽  
Vol 31 (5) ◽  
pp. 051201 ◽  
Author(s):  
Josephine J. Sheng ◽  
Darin Leonhardt ◽  
Sang M. Han ◽  
Steven W. Johnston ◽  
Jeffrey G. Cederberg ◽  
...  
Keyword(s):  
Density Profile ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Empirical Correlation ◽  
Interfacial Engineering

The Heteroepitaxy and Characterization of Inp and GaInP on Silicon for Solar Cell Applications

1990 ◽  
Vol 198 ◽  
Author(s):  
M.M. Al-Jassim ◽  
R.K. Ahrenkiel ◽  
M.W. Wanlass ◽  
J.M. Olson ◽  
S.M. Vernon
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Threading Dislocation Density ◽  
Direct Growth

ABSTRACTInP and GaInP layers were heteroepitaxially grown on (100) Si substrates by atmospheric pressure MOCVD. TEM and photoluminescence (PL) were used to measure the defect density and the minority carrier lifetime in these structures. The direct growth of InP on Si resulted in either polycrystalline or heavily faulted single-crystal layers. The use of GaAs buffer layers in InP/Si structures gave rise to significantly improved morphology and reduced the threading dislocation density. The best InP/Si layers in this study were obtained by using GaAs-GaInAs graded buffers. Additionally, the growth of high quality GaInP on Si was demonstrated. The minority carrier lifetime of 7 ns in these layers is the highest of any III-V/Si semiconductor measured in our laboratory.

Mobility-Lifetime Products in a-Si:H and the Dangling Bond Recombination Model

1992 ◽  
Vol 258 ◽  
Author(s):  
E. Morgado
Keyword(s):  
Fermi Level ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Localized States ◽  
Correlated Electrons ◽  
Recombination Model ◽  
Model Equations ◽  
Determinant Factor

ABSTRACTFermi level and light intensity dependences of electron and hole lifetimes have been calculated using a recombination model which considers positively correlated dangling bonds as the only localized states in the gap. The model equations have been solved numerically taking into account the non-equilibrium statistics of correlated electrons and the Fermi level dependence of the defect density. The results are in agreement with the anticorrelated behavior of the majority' and minority carrier μτ products observed in a-Si:H. The majority carrier lifetime is found to be more sensitive to the photogeneration rate than the minority carrier lifetime. The position of the Fermi level with respect to the energies of the D° and D- centers in the gap is a determinant factor of the (°τ)e/(μτ)h ratio.

On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
J. Vanhellemont ◽  
A. Kaniava ◽  
M. Libezny ◽  
E. Simoen ◽  
G. Kissinger ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Excitation Level ◽  
Lattice Defects ◽  
Recombination Activity ◽  
Extended Defect ◽  
Oxygen Precipitation ◽  
Complementary Techniques

AbstractThe recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is observed between the amount of precipitated oxygen and the extended defect density on one hand and the minority carrier lifetime and PL activity on the other hand. The PL analyses show as dominant features in the spectra the Dl and D2 lines. The relative amplitude of the D-lines in the different samples is investigated as a function of the oxygen content, defect density and excitation level. The results are correlated with those of complementary techniques and are interrelated on the basis of Shockley-Read-Hall (SRH) theory.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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