μτ Products of 10−6 cm2V−1 Deduced from Eleverse-Bias Dependence of Carrier-Collection Measurements in High Drift Mobility a-Si:H

1995 ◽  
Vol 377 ◽  
Author(s):  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Valence Band ◽  
Room Temperature ◽  
Reverse Bias ◽  
Film Growth ◽  
Schottky Diodes ◽  
Drift Mobility ◽  
Band Tail ◽  
Measured Voltage ◽  
Voltage Dependent ◽  
Carrier Collection

ABSTRACTThe room temperature hole drift mobility measured by the ‘time-of-flight’ technique can be increased to 0.5 cm2/Vs with a valence band tail width of 25meV by optimizing the ion impingement energy during film growth using a triode configured PECVD reactor. The reverse bias dependence of the carrier collection in Au Schottky diodes formed on these specimens show significantly improved carrier collection which can be approximately quantified using the C-V measured voltage dependent depletion widths to yield μτ≈10−6cm2V−1.

Control of the Electron and Hole Drift mobilities in Plasma Deposited a-Si:H

1994 ◽  
Vol 336 ◽  
Author(s):  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Room Temperature ◽  
Film Growth ◽  
Drift Mobility ◽  
Growth Surface ◽  
Band Tail ◽  
Capacitively Coupled ◽  
Deposition Parameters ◽  
Optimum Energy ◽  
Temperature Dependences ◽  
Stimulation Of

ABSTRACTThe ‘time-of-flight’ technique measured electron and hole drift mobilities are shown to be independent of deposition parameters in capacitively coupled, diode type RF-PECVD a-Si:H. However, the carrier mobilities can be varied by orders of magnitude by changing the bias applied to the mesh type controlling electrode in a triode type reactor. The room temperature hole drift mobility increases to 10−1cm2/Vs when an appropriate bias is applied to the mesh providing optimum energy ion stimulation of the film growth surface during deposition. Analysis of the field and temperature dependences of the drift mobilities shows that in the best specimens the conduction (valence) band tail density of states are approximately exponential with a reciprocal slope of lOMeV (25MeV).

Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tail

1988 ◽  
Vol 57 (3) ◽  
pp. 387-397 ◽  
Author(s):  
J. M. Marshall ◽  
R. A. Street ◽  
M. J. Thompson ◽  
W. B. Jackson
Keyword(s):  
Valence Band ◽  
Drift Mobility ◽  
Band Tail

Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C°

1987 ◽  
Vol 95 ◽  
Author(s):  
D. S. Shen ◽  
S. Aljishi ◽  
Z E. Smith ◽  
J. P. Conde ◽  
V. Chu ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Room Temperature ◽  
Time Of Flight ◽  
High Sensitivity ◽  
Drift Mobility ◽  
Hole Transport ◽  
Dispersive Transport ◽  
Band Tail ◽  
Flight Measurements

AbstractThe drift mobility μd and the mobility-lifetime product μτ in undoped a-Si:H have been studied up to 130°C. The electron μde is temperature-activated with Eae = 0.13 to 0.16 eV. The electron (μτ)e increases with temperature T. For hole transport, we observe the transition from dispersive to non-dispersive transport with increasing T. The hole μdh is ∼ 1/100 of μde, and is activated with Eah = 0.34 to 0.48eV. The hole (μτ)h does not change much with T. A computer simulation demonstrates the high sensitivity of μd to the band tail width.

Time-of-Flight Measurement on a-Ge:H and a-SiGe:H Alloys

1992 ◽  
Vol 258 ◽  
Author(s):  
E.Z. Liu ◽  
D. Pang ◽  
W. Paul ◽  
J.H. Chen
Keyword(s):  
Room Temperature ◽  
Transport Model ◽  
Drift Mobility ◽  
Band Tail ◽  
High Quality ◽  
Hopping Transport ◽  
Flight Measurement ◽  
Order Of Magnitude ◽  
Temperature Ranges ◽  
Electron Drift Mobility

ABSTRACTWe report TOF measurements on high quality intrinsic a-Ge:H and a-SiGe:H films of E04=1–4.eV in temperature ranges of 200 to 280 and 230 to 300K, respectively. Complete charge collection is achieved in all measurements. For a-Ge:H films, the (μτ)e product obtained from the Hecht plot is (5±3)×10-8 cm2/V above 240K and decreases at lower temperatures. The electron transit signal is dispersive at all temperatures. The a obtained from ttV-1/αis 0.23 at 200K and approaches 1.0 at 260K. The electron drift mobility μd shows activated behavior, with an energy of 0.37±0.05eV, and has an extrapolated room temperature value of 0.03 cm2/Vs. Compared to a-Ge:H, μd of a-SiGe:H alloy samples is lower by one order of magnitude but has a similar activation energy. These results are consistent with a band tail hopping transport model.

scholarly journals Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
S. Dinca ◽  
G. Ganguly ◽  
Z. Lu ◽  
E. A. Schiff ◽  
V. Vlahos ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Valence Band ◽  
Displacement Field ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Drift Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Insight Into

AbstractWe present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10-9 cm2/V), hole mobilities reach values as large as 0.01 cm2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

2001 ◽  
Vol 78 (12) ◽  
pp. 1685-1687 ◽  
Author(s):  
J. W. P. Hsu ◽  
M. J. Manfra ◽  
D. V. Lang ◽  
S. Richter ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Reverse Bias ◽  
Schottky Diodes

Sensitization of the Holes Lifetime by the Addition of Dangling Bonds in a-Si:H

2001 ◽  
Vol 664 ◽  
Author(s):  
L.F. Fonseca ◽  
S. Z. Weisz ◽  
I. Balberg
Keyword(s):  
Valence Band ◽  
Important Implication ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Defect States ◽  
Band Tail ◽  
Present Understanding

ABSTRACTThis paper is concerned with the phenomenon of the increase of the holes lifetime with the increase of the dangling bond concentration in a-Si:H. This rather surprising phenomenon that was observed, but not discussed, previously is shown to be a non-trivial effect which is based on the charged nature of the dangling bonds and a special scenario of the concentrations of the various defect states in the material. The most important implication of our study is that the charged dangling bonds can sensitize the valence band tail states, in contrast with the accepted roles of these types of states. The present understanding suggests that many new interesting phototransport phenomena can be found in a-Si:H.

Thickness and substrate effects on AlN thin film growth at room temperature

2008 ◽  
Vol 43 (3) ◽  
pp. 309-313 ◽  
Author(s):  
B. Abdallah ◽  
C. Duquenne ◽  
M. P. Besland ◽  
E. Gautron ◽  
P. Y. Jouan ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Film Growth ◽  
Thin Film Growth ◽  
Substrate Effects

scholarly journals The Study of Pineapple Peel (Ananas comosus L.) Waste Based-Electrolyte Medium: A Simple Experiment Design for the Students

2019 ◽  
Vol 2 (2) ◽  
pp. 89
Author(s):  
Irvan Maulana Firdaus ◽  
Rosiana Dewi Silvia ◽  
Ahmad Faqih Amin ◽  
Rajwa Vourza Tsaqifa ◽  
Ira Purnama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electrode Materials ◽  
Oxidation Process ◽  
Operating Time ◽  
Normal Pressure ◽  
Ananas Comosus ◽  
Simple Experiment ◽  
Measured Voltage ◽  
Turn On ◽  
Pineapple Peel

<p>To promote the student curiosity and understanding in the electrolyte medium was carried out using home-made Volta cell. The electrode materials were iron and carbon for anode (-) and cathode (+), respectively. The experiment was designed by two models that were single-chamber (SC) and three series-packed chambers (3-SCs), respectively. Electrolyte properties could be investigated in pineapple peel (<em>Ananas comosus </em>L.)-based electrolyte medium during the operating time of 8 hours, respectively. The measured-voltage of 2.63 and 2.60 of the 3-SCs system could turn on the LED lamp. However, in this study, the decrease of voltage and current were due to the oxidation process of the pineapple peel-based medium under air, room temperature, and normal pressure during the long-operating time of the experiment. Finally, this research expected to provide additional valuable experience and knowledge as same as to facilitate in information delivering to the students in understanding the electrolyte medium from the waste or natural sources.</p>

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