Control of the Electron and Hole Drift mobilities in Plasma Deposited a-Si:H

1994 ◽  
Vol 336 ◽  
Author(s):  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Room Temperature ◽  
Film Growth ◽  
Drift Mobility ◽  
Growth Surface ◽  
Band Tail ◽  
Capacitively Coupled ◽  
Deposition Parameters ◽  
Optimum Energy ◽  
Temperature Dependences ◽  
Stimulation Of

ABSTRACTThe ‘time-of-flight’ technique measured electron and hole drift mobilities are shown to be independent of deposition parameters in capacitively coupled, diode type RF-PECVD a-Si:H. However, the carrier mobilities can be varied by orders of magnitude by changing the bias applied to the mesh type controlling electrode in a triode type reactor. The room temperature hole drift mobility increases to 10−1cm2/Vs when an appropriate bias is applied to the mesh providing optimum energy ion stimulation of the film growth surface during deposition. Analysis of the field and temperature dependences of the drift mobilities shows that in the best specimens the conduction (valence) band tail density of states are approximately exponential with a reciprocal slope of lOMeV (25MeV).

μτ Products of 10−6 cm2V−1 Deduced from Eleverse-Bias Dependence of Carrier-Collection Measurements in High Drift Mobility a-Si:H

1995 ◽  
Vol 377 ◽  
Author(s):  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Valence Band ◽  
Room Temperature ◽  
Reverse Bias ◽  
Film Growth ◽  
Schottky Diodes ◽  
Drift Mobility ◽  
Band Tail ◽  
Measured Voltage ◽  
Voltage Dependent ◽  
Carrier Collection

ABSTRACTThe room temperature hole drift mobility measured by the ‘time-of-flight’ technique can be increased to 0.5 cm2/Vs with a valence band tail width of 25meV by optimizing the ion impingement energy during film growth using a triode configured PECVD reactor. The reverse bias dependence of the carrier collection in Au Schottky diodes formed on these specimens show significantly improved carrier collection which can be approximately quantified using the C-V measured voltage dependent depletion widths to yield μτ≈10−6cm2V−1.

Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C°

1987 ◽  
Vol 95 ◽  
Author(s):  
D. S. Shen ◽  
S. Aljishi ◽  
Z E. Smith ◽  
J. P. Conde ◽  
V. Chu ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Room Temperature ◽  
Time Of Flight ◽  
High Sensitivity ◽  
Drift Mobility ◽  
Hole Transport ◽  
Dispersive Transport ◽  
Band Tail ◽  
Flight Measurements

AbstractThe drift mobility μd and the mobility-lifetime product μτ in undoped a-Si:H have been studied up to 130°C. The electron μde is temperature-activated with Eae = 0.13 to 0.16 eV. The electron (μτ)e increases with temperature T. For hole transport, we observe the transition from dispersive to non-dispersive transport with increasing T. The hole μdh is ∼ 1/100 of μde, and is activated with Eah = 0.34 to 0.48eV. The hole (μτ)h does not change much with T. A computer simulation demonstrates the high sensitivity of μd to the band tail width.

Time-of-Flight Measurement on a-Ge:H and a-SiGe:H Alloys

1992 ◽  
Vol 258 ◽  
Author(s):  
E.Z. Liu ◽  
D. Pang ◽  
W. Paul ◽  
J.H. Chen
Keyword(s):  
Room Temperature ◽  
Transport Model ◽  
Drift Mobility ◽  
Band Tail ◽  
High Quality ◽  
Hopping Transport ◽  
Flight Measurement ◽  
Order Of Magnitude ◽  
Temperature Ranges ◽  
Electron Drift Mobility

ABSTRACTWe report TOF measurements on high quality intrinsic a-Ge:H and a-SiGe:H films of E04=1–4.eV in temperature ranges of 200 to 280 and 230 to 300K, respectively. Complete charge collection is achieved in all measurements. For a-Ge:H films, the (μτ)e product obtained from the Hecht plot is (5±3)×10-8 cm2/V above 240K and decreases at lower temperatures. The electron transit signal is dispersive at all temperatures. The a obtained from ttV-1/αis 0.23 at 200K and approaches 1.0 at 260K. The electron drift mobility μd shows activated behavior, with an energy of 0.37±0.05eV, and has an extrapolated room temperature value of 0.03 cm2/Vs. Compared to a-Ge:H, μd of a-SiGe:H alloy samples is lower by one order of magnitude but has a similar activation energy. These results are consistent with a band tail hopping transport model.

Surface Condition in the Plasma-CVD of a-Si:H,F from SiF4 and H2

1988 ◽  
Vol 131 ◽  
Author(s):  
A. Maruyama ◽  
D. S. Shen ◽  
V. Chu ◽  
J. Z. Liu ◽  
J. Jaroker ◽  
...  
Keyword(s):  
Surface State ◽  
Growth Temperature ◽  
Urbach Energy ◽  
Film Growth ◽  
Surface Condition ◽  
Surface States ◽  
State Density ◽  
Growth Surface ◽  
Plasma Cvd ◽  
Band Tail

ABSTRACTWe present a detailed study of the growth of a-Si:H,F from SiF4 and H4. The growth surface appears to have a high density of surface states. These surface states can be thermally relaxed by keeping the films at growth temperature after the termination of growth, suggesting that the states were created during film growth. When frozen in, the surface state density is found to depend on the conditions during film growth. The density is related to the sharpness of the valence band tail as measured by the Urbach Energy. We believe that a reaction on the growth surface resulting in fluorine elimination creates these surface states and also affects the formation of the Si-network.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Effect of titanium alloys elasticity modulus on warping of stamped blanks during cooling

2021 ◽  
pp. 221-227
Author(s):  
M.O. Smirnov ◽  
A.M. Zolotov ◽  
A.M. Tyukhtyaev
Keyword(s):  
Mathematical Modeling ◽  
Titanium Alloys ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Elasticity Modulus ◽  
Preliminary Deformation ◽  
Wide Spread ◽  
Temperature Dependences ◽  
Cumulative Deformation ◽  
The Difference

Wide spread in the values of the elasticity modulus of the titanium VT6 alloy and its analogs Ti—6Al—4V, Ti—6Al—4V ELI at room temperature and at elevated temperatures is revealed аs result of the literature sources analysis. The data are ambiguous, the available temperature dependences of the elasticity modulus have very different values starting from the temperature T l 500 °C. Mathematical modeling of the warping process is carried out on the example of figurine-shaped stamped blank of turbine blade using various dependences of the elasticity modulus on temperature. Cases of warping during cooling of stamped blank after cooling-down in stamp with and without cumulative deformation are considered. The difference in the course of thermal deformations during the cooling of the workpiece is obtained using different temperature dependences of the elasticity modulus. The presence of preliminary deformation increases the warping of the workpieces.

Change in the Properties of a Lead-acid Battery Depending on the Cycling Speed and the Ambient Temperature

2021 ◽  
Vol 105 (1) ◽  
pp. 119-134
Author(s):  
Jana Zimáková ◽  
Petr Baca ◽  
Martin Langer ◽  
Tomáš Binar
Keyword(s):  
Ambient Temperature ◽  
High Temperatures ◽  
Room Temperature ◽  
Lead Acid Battery ◽  
Ambient Temperatures ◽  
Lead Acid Batteries ◽  
Temperature Dependences ◽  
Cycling Speed ◽  
Lead Acid

This work deals with lead-acid batteries, their properties and individual types that are available on the market. The temperature dependences of the battery parameters at different ambient temperatures and at different discharging and charging modes are measured. 6 batteries are tested at different charging currents, which provides information about their behavior both during discharge and at the time of charging. During the experiments, testing is not only performed at room temperature, but the batteries are also exposed to high temperatures up to 75 °C.

Thickness and substrate effects on AlN thin film growth at room temperature

2008 ◽  
Vol 43 (3) ◽  
pp. 309-313 ◽  
Author(s):  
B. Abdallah ◽  
C. Duquenne ◽  
M. P. Besland ◽  
E. Gautron ◽  
P. Y. Jouan ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Film Growth ◽  
Thin Film Growth ◽  
Substrate Effects

MEASUREMENT OF ANISOTROPIC THERMOPOWER IN SINGLE CRYSTALS Bi2Sr2CaCu2Oy

1989 ◽  
Vol 03 (04) ◽  
pp. 295-299 ◽  
Author(s):  
G.H. CHEN ◽  
J.H. WANG ◽  
D.N. ZHENG ◽  
Y.F. YAN ◽  
S.L. JIA ◽  
...  
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Temperature Dependences

The thermopower in single crystals of the high T c superconductor Bi 2 Sr 2 CaCu 2 O y has been measured in both a-b plane (S ab ) and along c axis (Sc) respectively. The temperature dependences are distinctly anisotropic. S c increases monotonously with temperature and is positive from T c to room temperature, while S ab increases rapidly near T c and then decreases with temperature. The maximum of S ab is at 115 K and S ab changes its sign at 250 K.

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