Tem Investigation of Hydrogen Implanted and Laser Annealed Silicon

1994 ◽  
Vol 373 ◽  
Author(s):  
P. Zheng ◽  
R.G. Saint-Jacques ◽  
B. Terreault ◽  
G. Veilleux
Keyword(s):  
Structural Damage ◽  
Laser Annealing ◽  
Bubble Formation ◽  
Laser Pulses ◽  
Hydrogen Gas ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Means Of Transmission

AbstractIn order to explain the relatively easy laser-induced desorption of hydrogen implanted in silicon, and particularly the lower temperature needed for desorption at higher implantation energy, the microstructural modifications produced by laser pulses were studied by means of transmission electron microscopy. The structural damage, such as defect clusters and hydrogen gas bubbles was observed. In the case of low dose implantation (H/Si ≤ 15&), most of the bubbles were produced during laser annealing rather than during implantation. This bubble formation in the course of desorption explains the higher temperature needed. When blisters are already present on the as-implanted surface, desorption starts at a lower temperature.

Effect of Aging Treatment on Damping Capacity in Mncunife Alloy

2012 ◽  
Vol 246-247 ◽  
pp. 1158-1162
Author(s):  
Xu Fu ◽  
Ning Li ◽  
Yu Hua Wen ◽  
Jing Teng ◽  
Ying Zhang
Keyword(s):  
Electron Microscope ◽  
Aging Treatment ◽  
Damping Capacity ◽  
Torsion Pendulum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Lower Temperature ◽  
The Relationship

M2052 alloys with various aging treatments are obtained in order to investigate the relationship between aging treatment and damping capacity by the torsion pendulum, X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) methods. The results show that M2052 can obtain high damping capacity (δ>0.2) when aged at a range from 400°C to 450°C, and the damping capacity after aged at a lower temperature is higher than that aged at a higher temperature for the maximum values. TEM and XRD results show that fcc-fct transformation occurs after aging treatment. The volumes of fct structures are one of reason to affect the damping capacity in M2052 alloy. The better understanding aging treatment could promote the applications of M2052 alloy.

Effect of Annealing Temperature on Microstructure and Properties of Ultra Purified Ferritic Stainless Steel Containing Copper

2018 ◽  
Vol 913 ◽  
pp. 270-276
Author(s):  
Hong Xiang Yin ◽  
Yi Wu ◽  
Ai Min Zhao ◽  
Zheng Zhi Zhao ◽  
Qiu Qin Fu
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Annealing Temperature ◽  
Texture Evolution ◽  
Fiber Texture ◽  
Transmission Electron ◽  
Back Scattering ◽  
Higher Temperature ◽  
Means Of Transmission ◽  
The Relationship

The effects of annealing temperature on microstructure, mechanical properties, formability, and texture evolution were analyzed in the article. The microstructure of the steel obtained through different annealing processes were investigated by means of transmission electron microscopy; The micro texture of steel was measured by using electron back scattering diffraction analysis; The relationship between Cu precipitates and matrix was analyzed by using the selected area diffraction technology. The results show that when annealing temperature was 700 ~ 850 °C, the yield strength and tensile strength first decreased slightly and then increased, while the elongation accordingly first increased then decreased slightly. The best mechanical property and formability were obtained at 800 °C. Cu precipitates reduced with the increase of annealing temperature and it accorded with K - S relationship with matrix. The grains near the {111} < 112 > orientation grew up selectively. The higher the temperature, the more the γ fiber texture content. But at higher temperature (850 °C), γ texture was damaged and the content was reduced.

4H-SiC MOSFET Source and Body Laser Annealing Process

2020 ◽  
Vol 1004 ◽  
pp. 705-711
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Surface Roughening ◽  
Dopant Activation ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Recovery Technique ◽  
Lattice Damage

This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime. Characterization was carried out through micro-Raman spectroscopy, Photoluminescence (PL), Transmission Electron Microscopy (TEM) and outcomes were than compared with 1h thermally annealed at 1650-1770-1750 °C P implanted samples (source implant) and P and Al implanted samples for 30 minutes at 1650 °C (source and body implants). Experimental results demonstrate that laser annealing enables crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Unlike the results obtained with thermal annealing where stress up to 172 Mpa and high carbon vacancies (Vc) concentration is recorded, laser annealing provides almost stress free samples and much less defective crystal avoiding intra-bandgap carrier recombination. Implant was almost preserved except for step-bouncing and surface oxidation phenomena leading to surface roughening. However, the results of this work gives way to laser annealing process practicability for lattice damage recovery and dopant activation.

scholarly journals A Study of the Optimum Quenching Temperature of Steels with Various Hot Rolling Microstructures after Cold Rolling, Quenching and Partitioning Treatment

Metals ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 579 ◽  
Author(s):  
Bin Chen ◽  
Juhua Liang ◽  
Tao Kang ◽  
Ronghua Cao ◽  
Cheng Li ◽  
...  
Keyword(s):  
Electron Backscatter Diffraction ◽  
High Strength ◽  
Quenching Temperature ◽  
Austenite Grain Size ◽  
Quenching And Partitioning ◽  
Transmission Electron ◽  
Cold Rolled ◽  
Lower Temperature ◽  
Means Of Transmission ◽  
Hot Rolled

Quenching and partitioning (Q&P) processes were applied to a cold-rolled high strength steel (0.19C-1.26Si-2.82Mn-0.92Ni, wt %). The effects of the prior hot-rolled microstructure on the optimum quenching temperature of the studied steels were systematically investigated. The microstructure was analyzed by means of transmission electron microscope (TEM), electron backscatter diffraction (EBSD) and X-ray diffraction (XRD). Compared with the ferrite pearlite mixture matrix, the lower martensite start (Ms) temperature and smaller prior austenite grain size in the cold-rolled martensite matrix are the main reasons for the optimum quenching temperature shifting to a lower temperature in the Q&P steels. We found that an empirical formula that only considers the influence of the alloy composition in the calculation of the Ms temperature will cause a certain interference to the pre-determined optimum quenching temperature of the Q&P steel.

Characterization of Si MBE Layers Doped in Situ by As Ion Beams

1987 ◽  
Vol 102 ◽  
Author(s):  
Max L. Swanson ◽  
N.R. Parikh ◽  
T.E. Jackman ◽  
D.C. Houghton ◽  
M.W. Denhoff
Keyword(s):  
Structural Damage ◽  
Electrical Activation ◽  
Dislocation Loops ◽  
Electrical Measurements ◽  
Implantation Energy ◽  
Mbe Growth ◽  
Transmission Electron ◽  
High Concentrations

ABSTRACTTo achieve high concentrations and electrical activation of As in Si without subsequent annealing, 500-3000 eV As + ions were implanted during MBE growth of Si at 450-840°C. The epitaxial layers were characterized by Rutherford backscattering/channeling, transmission electron microscopy, secondary ion mald spectroscopy, and electrical measurements. Samples containing 1.2×1020 As cm-3 grown at 700°C showed little damage, high As substitutionality and high electrical activation. However, similarly doped layers grown at 460°C showed lower As activation and varying amounts of structural damage. In one case, a band of damage near the Si substrate was observed which persisted even after rapid thermal annealing at 1120°C (10 s); the damage was characterized by a dechanneling step, non-substitutional As atoms and dislocation loops. A sample grown at 460°C with a high implantation energy (3 keV) was highly defected.

scholarly journals Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3362 ◽  
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Epitaxial Layers ◽  
Extended Defects ◽  
Experimental Activity ◽  
Transmission Electron ◽  
Testing Chamber ◽  
Process Viability

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 1 h as well as P and Al implanted samples annealed at 1650 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.

scholarly journals Microstructure and Optical Characterization of Mid-Wave HgCdTe grown by MBE under Different Conditions

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 296
Author(s):  
Xiao-fang Qiu ◽  
Sheng-xi Zhang ◽  
Jian Zhang ◽  
Yi-cheng Zhu ◽  
Cheng Dou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Temperature ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Different Temperatures ◽  
Higher Temperature ◽  
Lower Temperature

The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman and photoluminescence. The effects of growth temperature on the crystal quality of HgCdTe/CdTe have been studied in detail. The HgCdTe film grown at the lower temperature of 151 °C has high crystal quality, the interface is flat and there are no micro twins. While the crystal quality of the HgCdTe grown at higher temperature of 155 °C is poor, and there are defects and micro twins at the HgCdTe/CdTe interface. The research results demonstrate that the growth temperature significantly affects the crystal quality and optical properties of HgCdTe films.

Oxygen Bubble Formation and Transformation During High-Dose Oxygen Implantation and Annealing of Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
S. J. Krause ◽  
S. Seraphin ◽  
B. L. Chen ◽  
B. Cordts ◽  
P. Roitman
Keyword(s):  
Bubble Formation ◽  
Oxide Particle ◽  
Beam Current ◽  
Wafer Surface ◽  
High Dose ◽  
Subsequent Transformation ◽  
Transmission Electron ◽  
Oxygen Bubble ◽  
Lower Temperature ◽  
Increasing Temperature

AbstractThe formation of bubbles during high dose implantation of oxygen into silicon, and the subsequent transformation of the bubbles during annealing, were studied with transmission electron microscopy (TEM). There was a threshold for bubble formation at a minimum dose of 0.3 × 1018 oxygen/cm2 and a lower temperature of 550°C. As dose increased the bubbles grew larger and the bubble trails lengthened. However, increasing beam current by a factor of 10 or increasing temperature to 700°C did not affect bubble formation. Bubble evolution during intermediate temperature annealing was also studied using TEM techniques. For 2 hour anneals between 1000 and 1100°C the oxygen bubbles transform into SiO2 particles by first forming a “shell” of SiO2, which then facets, grows inward, and finally completely transforms the bubble into an oxide particle. At temperatures greater than 1100°C the oxide particles dissolve by outdiffusion of the oxygen to the wafer surface.

Ultrastructural Analysis of the Salivary Glands of Gromphadorhina Portentosa (Schaum)

1977 ◽  
Vol 35 ◽  
pp. 638-639
Author(s):  
P.J. Dailey
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Salivary Glands ◽  
Secretory Vesicles ◽  
The Past ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
Gromphadorhina Portentosa ◽  
Scanning Electron ◽  
Topographical Relief

The structure of insect salivary glands has been extensively investigated during the past decade; however, none have attempted scanning electron microscopy (SEM) in ultrastructural examinations of these secretory organs. This study correlates fine structure by means of SEM cryofractography with that of thin-sectioned epoxy embedded material observed by means of transmission electron microscopy (TEM).Salivary glands of Gromphadorhina portentosa were excised and immediately submerged in cold (4°C) paraformaldehyde-glutaraldehyde fixative1 for 2 hr, washed and post-fixed in 1 per cent 0s04 in phosphosphate buffer (4°C for 2 hr). After ethanolic dehydration half of the samples were embedded in Epon 812 for TEM and half cryofractured and subsequently critical point dried for SEM. Dried specimens were mounted on aluminum stubs and coated with approximately 150 Å of gold in a cold sputtering apparatus.Figure 1 shows a cryofractured plane through a salivary acinus revealing topographical relief of secretory vesicles.

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

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