scholarly journals Microstructure and Optical Characterization of Mid-Wave HgCdTe grown by MBE under Different Conditions

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 296
Author(s):  
Xiao-fang Qiu ◽  
Sheng-xi Zhang ◽  
Jian Zhang ◽  
Yi-cheng Zhu ◽  
Cheng Dou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Temperature ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Different Temperatures ◽  
Higher Temperature ◽  
Lower Temperature

The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman and photoluminescence. The effects of growth temperature on the crystal quality of HgCdTe/CdTe have been studied in detail. The HgCdTe film grown at the lower temperature of 151 °C has high crystal quality, the interface is flat and there are no micro twins. While the crystal quality of the HgCdTe grown at higher temperature of 155 °C is poor, and there are defects and micro twins at the HgCdTe/CdTe interface. The research results demonstrate that the growth temperature significantly affects the crystal quality and optical properties of HgCdTe films.

Effect of Aging Treatment on Damping Capacity in Mncunife Alloy

2012 ◽  
Vol 246-247 ◽  
pp. 1158-1162
Author(s):  
Xu Fu ◽  
Ning Li ◽  
Yu Hua Wen ◽  
Jing Teng ◽  
Ying Zhang
Keyword(s):  
Electron Microscope ◽  
Aging Treatment ◽  
Damping Capacity ◽  
Torsion Pendulum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Lower Temperature ◽  
The Relationship

M2052 alloys with various aging treatments are obtained in order to investigate the relationship between aging treatment and damping capacity by the torsion pendulum, X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) methods. The results show that M2052 can obtain high damping capacity (δ>0.2) when aged at a range from 400°C to 450°C, and the damping capacity after aged at a lower temperature is higher than that aged at a higher temperature for the maximum values. TEM and XRD results show that fcc-fct transformation occurs after aging treatment. The volumes of fct structures are one of reason to affect the damping capacity in M2052 alloy. The better understanding aging treatment could promote the applications of M2052 alloy.

Effect of Calcination Temperature on the Morphological and Phase Structure of Hydrothermally Synthesized Copper Ion Doped TiO2 Nanotubes

2014 ◽  
Vol 1024 ◽  
pp. 7-10 ◽  
Author(s):  
Mohd Hasmizam Razali ◽  
M.N. Ahmad-Fauzi ◽  
Abdul Rahman Mohamed ◽  
Srimala Sreekantan
Keyword(s):  
Calcination Temperature ◽  
Morphological Evolution ◽  
Copper Ion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Scanning Electronmicroscopy ◽  
Higher Temperature ◽  
Uniform Diameter

Morphological evolution and phase transformations of copper ion doped TiO2nanotubes after being calcined at different temperatures were studied by field emission scanning electronmicroscopy, transmission electron microscopy, and X-ray diffraction. After calcination at 300°C, the nanotubes with uniform diameter and length wereobtained. At 400°C, the nanotube structures were maintained. Nevertheless the inner tube diameter became narrower, and in same instances disappeared due to aggregation of nanotubes. The copper ion doped TiO2nanotubes then transformed to nanorodsat 500°C and the length of the nanorodsshortens after calcination at 600 °C. When the calcination temperature was further increased to 700°C, the nanorodsdisintegrate to form nanoparticles. On the other hand the phase structures of copper ion doped TiO2nanotubes calcined at 300 and 400 °C were TiO2hexagonal. After calcined at higher temperature (600 and 700°C) they transformed to anatase TiO2(tetragonal).

scholarly journals Transformation mechanism of magnetite nanoparticles

2015 ◽  
Vol 33 (2) ◽  
pp. 278-285 ◽  
Author(s):  
Umar Saeed Khan ◽  
Abdul Manan ◽  
Nasrullah Khan ◽  
Amir Mahmood ◽  
Abdur Rahim ◽  
...  
Keyword(s):  
Magnetite Nanoparticles ◽  
Bet Surface Area ◽  
X Ray Diffraction ◽  
Transformation Mechanism ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Magnetite Particles ◽  
Size And Morphology ◽  
Lower Temperature

AbstractA simple oxidation synthesis route was developed for producing magnetite nanoparticles with controlled size and morphology. Investigation of oxidation process of the produced magnetite nanoparticles (NP) was performed after synthesis under different temperatures. The phase transformation of synthetic magnetite nanoparticles into maghemite and, henceforth, to hematite nanoparticles at different temperatures under dry oxidation has been studied. The natural magnetite particles were directly transformed to hematite particles at comparatively lower temperature, thus, maghemite phase was bypassed. The phase structures, morphologies and particle sizes of the produced magnetic nanoparticles have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDX) and BET surface area analysis.

Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction

2012 ◽  
Vol 725 ◽  
pp. 251-254
Author(s):  
Yuki Mizukami ◽  
D. Kosemura ◽  
M. Takei ◽  
Y. Numasawa ◽  
Y. Ohshita ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Optical Properties ◽  
Quantum Confinement ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Transmission Electron

Raman spectroscopy and photoluminescence were performed in order to understand the optical properties of nanocrystal Si in relation to quantum confinement effects. The nanocrystal Si (nc-Si) dots in the SiO2 layer were fabricated by the H2 plasma treatment and chemical vapour deposition followed by the oxidation of the nc-Si dots surface. The post-annealing was also performed to improve the crystalline quality of nc-Si at 1050 °C for 5 and 10 min. There is a good correlation of the quantum confinement effects between the results of Raman spectroscopy and photoluminescence. The Raman spectra from nc-Si were analysed using the model of Richter et al. As a result, the sizes of the nc-Si dots were consistent with those obtained by transmission electron microscopy and X-ray diffraction. Moreover, the compressive stress in the nc-Si dots were evaluated which was induced by the SiO2 surroundings.

Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Vila ◽  
A. Cornet ◽  
J.R. Morante ◽  
D.I. Westwood
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Temperature Influence ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTA Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

2019 ◽  
Vol 963 ◽  
pp. 346-349 ◽  
Author(s):  
Eric G. Barbagiovanni ◽  
Alessandra Alberti ◽  
Corrado Bongiorno ◽  
Emanuele Smecca ◽  
Massimo Zimbone ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Resolution ◽  
Photo Luminescence ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Cubic Silicon Carbide ◽  
Koh Etching ◽  
Microscopy Images

The effect of varying growth rate on the formation of defects in homo-epitaxially grown cubic silicon carbide (3C-SiC) is studied. Three growth rates are considered (30, 60 and 90 μm/hr) demonstrating that as the growth rate increases the density of point defects, as demonstrated by photo- luminescence, and stacking faults (SFs), as measured by a KOH etching procedure, increase. Scanning transmission electron microscopy images demonstrate generation, annihilation and closure of SFs as a function film thickness. High resolution X-ray diffraction is used to uncover the higher quality of homo-epitaxial with respect hetero-epitaxial films through the examination of the sample mosaicity and SF density.

MODULATION OF PTCDA NANOSTRUCTURE AND OPTICAL PROPERTY: DEPENDENCE ON GROWTH TEMPERATURE

NANO ◽  
2014 ◽  
Vol 09 (06) ◽  
pp. 1450068
Author(s):  
PANPAN GUO ◽  
YUYAN HAN ◽  
WENHUA ZHANG ◽  
LINGYUN LIU ◽  
KAI WANG ◽  
...  
Keyword(s):  
Optical Properties ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Potential Applications ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic ◽  
Tetracarboxylic Dianhydride

3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) nanostructures with different morphologies are prepared on glass substrates at different substrate temperature (Ts) in a molecular beam epitaxy (MBE) system. Scanning/transmission/scanning transmission electron microscopy (SEM/TEM/STEM), X-ray diffraction (XRD), selected area electron diffraction (SAED) and nanobeam diffraction (NBD) techniques are employed in the systematical characterizations of the nanostructures. It is found that the PTCDA nanosheets (NSs), nanowires and nanorods are facile to produce at Ts = 350° C , 330°C and 240°C, respectively; the continuous films are obtained at 180°C and 50°C. XRD studies indicate that only the α-phase polymorph is formed regardless of the Ts. SAED and NBD results show that the nanowire and NS are single crystalline. The optical properties of the prepared PTCDA nanostructures are also found to be influenced by Ts and are correlated with the crystal quality and size. PTCDA nanowires and NSs exhibit an obvious redshift and broadening in the adsorption spectra, and enhanced emission intensity. The improved optical properties facilitate potential applications of these nanostructures in organic optoelectronic devices.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

scholarly journals Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 698
Author(s):  
Wenwang Wei ◽  
Yi Peng ◽  
Jiabin Wang ◽  
Muhammad Farooq Saleem ◽  
Wen Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Compressive Stress ◽  
Sapphire Substrate ◽  
Light Transmission ◽  
Chemical Vapor ◽  
Biaxial Stress ◽  
X Ray Diffraction ◽  
Patterned Sapphire Substrate ◽  
Transmission Electron ◽  
Nano Patterning

AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80–300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (Eg) and optical constants (n, k) with temperature are discussed in detail. Nano-patterning leads to poor light transmission due to light scattering, coupling, and trapping in nano-holes.

scholarly journals Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

2016 ◽  
Vol 7 ◽  
pp. 1492-1500 ◽  
Author(s):  
Ionel Stavarache ◽  
Valentin Adrian Maraloiu ◽  
Petronela Prepelita ◽  
Gheorghe Iordache
Keyword(s):  
Optical Properties ◽  
Response Time ◽  
Spectral Width ◽  
Fast Response ◽  
Superior Performance ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Preparation Conditions ◽  
Photoelectric Properties ◽  
Transmission Electron

Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge–Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW−1), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.

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