Characterization of Si MBE Layers Doped in Situ by As Ion Beams

1987 ◽  
Vol 102 ◽  
Author(s):  
Max L. Swanson ◽  
N.R. Parikh ◽  
T.E. Jackman ◽  
D.C. Houghton ◽  
M.W. Denhoff
Keyword(s):  
Structural Damage ◽  
Electrical Activation ◽  
Dislocation Loops ◽  
Electrical Measurements ◽  
Implantation Energy ◽  
Mbe Growth ◽  
Transmission Electron ◽  
High Concentrations

ABSTRACTTo achieve high concentrations and electrical activation of As in Si without subsequent annealing, 500-3000 eV As + ions were implanted during MBE growth of Si at 450-840°C. The epitaxial layers were characterized by Rutherford backscattering/channeling, transmission electron microscopy, secondary ion mald spectroscopy, and electrical measurements. Samples containing 1.2×1020 As cm-3 grown at 700°C showed little damage, high As substitutionality and high electrical activation. However, similarly doped layers grown at 460°C showed lower As activation and varying amounts of structural damage. In one case, a band of damage near the Si substrate was observed which persisted even after rapid thermal annealing at 1120°C (10 s); the damage was characterized by a dechanneling step, non-substitutional As atoms and dislocation loops. A sample grown at 460°C with a high implantation energy (3 keV) was highly defected.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

scholarly journals Direct Characterization of the Relation between the Mechanical Response and Microstructure Evolution in Aluminum by Transmission Electron Microscopy In Situ Straining

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1431
Author(s):  
Seiichiro Ii ◽  
Takero Enami ◽  
Takahito Ohmura ◽  
Sadahiro Tsurekawa
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Elastic Behavior ◽  
Annealed Specimen ◽  
Displacement Curve ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Stress Drops

Transmission electron microscopy in situ straining experiments of Al single crystals with different initial lattice defect densities have been performed. The as-focused ion beam (FIB)-processed pillar sample contained a high density of prismatic dislocation loops with the <111> Burgers vector, while the post-annealed specimen had an almost defect-free microstructure. In both specimens, plastic deformation occurred with repetitive stress drops (∆σ). The stress drops were accompanied by certain dislocation motions, suggesting the dislocation avalanche phenomenon. ∆σ for the as-FIB Al pillar sample was smaller than that for the post-annealed Al sample. This can be considered to be because of the interaction of gliding dislocations with immobile prismatic dislocation loops introduced by the FIB. The reloading process after stress reduction was dominated by elastic behavior because the slope of the load–displacement curve for reloading was close to the Young’s modulus of Al. Microplasticity was observed during the load-recovery process, suggesting that microyielding and a dislocation avalanche repeatedly occurred, leading to intermittent plasticity as an elementary step of macroplastic deformation.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

scholarly journals Preparation and Characterization of Epoxidised and Acrylated Styrene/Isoprene/Styrene (SIS) Triblock Block Copolymer Based Nanocomposites

2013 ◽  
Vol 28 ◽  
pp. 84-88 ◽  
Author(s):  
Santosh Khanal ◽  
Alina Shakya ◽  
Goerg H. Michler ◽  
Boulos Youssef ◽  
Jean M. Saiter ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Chemical Society ◽  
Performic Acid ◽  
Casting Method ◽  
Immiscible Polymers ◽  
Transmission Electron ◽  
Boehmite Nanoparticles ◽  
Solution Casting Method

In this work, a commercially available Styrene-Isoprene-Styrene (SIS)triblock copolymer was modified into epoxidised version (ESIS)using performic acid generated in situ from hydrogen peroxide and formic acid. The epoxidised sample was further acrylated to prepare acrylated version (ASIS). The nanocomposites of each sample (SIS, ESIS and ASIS) were prepared using boehmite nanoparticles as filler by solution casting method. The polymers were characterized by Fourier Transform Infrared (FTIR) spectroscopy and transmission electron microscopy (TEM). TEM investigations revealed that that the epoxidation of the diene block enhanced the dispersion of the nanofiller in the polymer matrix while the segregation of the nanoparticles towards the interface of the immiscible polymers was observed in the acrylated block copolymer based nanocomposite. DOI: http://dx.doi.org/10.3126/jncs.v28i0.8112 Journal of Nepal Chemical Society Vol. 28, 2011 Page: 84-88 Uploaded Date: May 24, 2013

Fabrication and In Situ Transmission Electron Microscope Characterization of Free-Standing Graphene Nanoribbon Devices

ACS Nano ◽  
2016 ◽  
Vol 10 (1) ◽  
pp. 1475-1480 ◽  
Author(s):  
Qing Wang ◽  
Ryo Kitaura ◽  
Shoji Suzuki ◽  
Yuhei Miyauchi ◽  
Kazunari Matsuda ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Graphene Nanoribbon ◽  
Free Standing ◽  
Transmission Electron

scholarly journals Hydrogenative Cyclization of Levulinic Acid to γ-Valerolactone with Methanol and Ni-Fe Bimetallic Catalysts

Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1096
Author(s):  
Ligang Luo ◽  
Xiao Han ◽  
Qin Zeng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Levulinic Acid ◽  
Hydrogen Donor ◽  
Effect Of Temperature ◽  
X Ray ◽  
Transmission Electron ◽  
Ft Ir ◽  
Temperature Programmed

A series of Ni-Fe/SBA-15 catalysts was prepared and tested for the catalytic hydrogenation of levulinic acid to γ-valerolactone, adopting methanol as the only hydrogen donor, and investigating the synergism between Fe and Ni, both supported on SBA-15, towards this reaction. The characterization of the synthesized catalysts was carried out by XRD (X-ray powder diffraction), TEM (transmission electron microscopy), H2-TPD (hydrogen temperature-programmed desorption), XPS (X-ray photoelectron spectroscopy), and in situ FT-IR (Fourier transform–infrared spectroscopy) techniques. H2-TPD and XPS results have shown that electron transfer occurs from Fe to Ni, which is helpful both for the activation of the C=O bond and for the dissociative activation of H2 molecules, also in agreement with the results of the in situ FT-IR spectroscopy. The effect of temperature and reaction time on γ-valerolactone production was also investigated, identifying the best reaction conditions at 200 °C and 180 min, allowing for the complete conversion of levulinic acid and the complete selectivity to γ-valerolactone. Moreover, methanol was identified as an efficient hydrogen donor, if used in combination with the Ni-Fe/SBA-15 catalyst. The obtained results are promising, especially if compared with those obtained with the traditional and more expensive molecular hydrogen and noble-based catalysts.

Photoreflectance Characterization of the Semi-Insulating InP Substrate Interface with InGaAs and InAlAs Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
Weimin Zhou ◽  
H. Shen ◽  
J. Pamulapati ◽  
M. Dutta ◽  
B. R. Bennett ◽  
...  
Keyword(s):  
Electron Transition ◽  
In Situ Monitoring ◽  
Signal Phase ◽  
Mbe Growth ◽  
Substrate Interface ◽  
Inp Substrate ◽  
Excitonic Transition ◽  
Inp Substrates

ABSTRACTPhotoreflectance (PR) has been performed on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. From investigations of the temperature dependence, time constant dependence and an additional cw light beam intensity dependence, three substrate peaks are identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation (KFO), and a transition from the spin-orbit split-off valence band. The results are indicative of a redistribution of charge near the substrate interface in the process of MBE growth; the associated PR signal (phase) could be used for in-situ monitoring of epilayer growth on SI-InP wafers.

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