Atomic Motion of Dopant During Interfacial Silicide Formation

1982 ◽  
Vol 18 ◽  
Author(s):  
M. Wittmer ◽  
C.-Y. Ting ◽  
K. N. Tu
Keyword(s):  
Noble Metal ◽  
Silicide Formation ◽  
Electrical Measurements ◽  
Ion Channeling ◽  
Metal Silicides ◽  
Junction Device ◽  
Dopant Atoms ◽  
Dopant Redistribution ◽  
Silicon Interface ◽  
Kinetics Of

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.

Comparison of Kinetics of TiSi2 Formation on Si(100) and Si(111)

1986 ◽  
Vol 71 ◽  
Author(s):  
C. A. Pico ◽  
N. C. Tran ◽  
J. R. Jacobs ◽  
M. G. Lagally
Keyword(s):  
Refractory Metal ◽  
Eutectic Temperature ◽  
Vacuum System ◽  
Silicide Formation ◽  
Substrate Orientation ◽  
Si Substrates ◽  
Metal Silicides ◽  
Kinetics Of Formation ◽  
P Type ◽  
Kinetics Of

AbstractRefractory-metal silicides are currently receiving widespread attention because of their usefulness as interconnects in VLSI devices. Potentially the most important of these silicides is TiSi2. TiSi2 offers a sharp stable interface, a high process-compatible eutectic temperature, and the lowest resistivity of all refractory-metal silicides. Much of the previous work on TiSi2 [1-8] has been directed towards the understanding of the kinetics of silicide formation in order to optimize these electrical and interfacial properties. One parameter that may affect the silicide formation is substrate orientation [9]. We have compared the kinetics of formation of TiSi2 for Ti deposited onto p-type 10Ω-cm Si(100) and Si(111). All process parameters except substrate orientation were identical. 2800Å of Ti was electron-beam evaporated at a rate of 20Å/s and a background pressure of 9×10−8 torr onto chemically cleaned (HNO3, HF, rinse) Si substrates and subsequently annealed at temperatures between 470°C and 700°C in evacuated sealed quartz tubes. A turbopumped vacuum system was used to evacuate the quartz tube before sealing. A Ti getter was independently heated to remove remaining background contaminants prior to annealing.

Redistribution and Influence of Arsenic in Chromium Silicide Formation

1984 ◽  
Vol 37 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Reaction Rate ◽  
Physical State ◽  
Metal Films ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Ion Channeling ◽  
Retarding Effect ◽  
Chromium Silicide ◽  
Dopant Atoms

AbstractThe redistribution of arsenic during CrSi2 formation and its influence on the growth rate of the silicide have been investigated with Rutherford backscattering and ion channeling spectroscopy and electron microscopy. Arsenic was introduced by implantation in the metal films or in the silicon substrates. When arsenic was initially in chromium, it was incorporated in CrSi2 during silicide formation and significantly reduced the reaction rate; when arsenic was initially in silicon, it accumulated at the silicon/silicide interface with a less pronounced retarding effect than that if arsenic was present in chromium. The redistribution of dopant atoms is attributed to the fact that silicon is the dominant moving species in CrSi2 formation. The influence of dopant atoms is related to their chemical and physical state.

Metal Silicides Formed by Direct Ion Beam Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
R. A. Zuhr ◽  
S. J. Pennycook ◽  
T. E. Haynes ◽  
O. W. Holland
Keyword(s):  
Low Temperatures ◽  
Metal Ion ◽  
Ion Beam ◽  
Good Control ◽  
Metallic Ions ◽  
Silicide Formation ◽  
Electrical Measurements ◽  
Ion Beam Deposition ◽  
Metal Silicides ◽  
Beam Deposition

ABSTRACTThin films of transition metal silicides have been produced at low temperatures on Si substrates by direct ion beam deposition (IBD) of the metal ion. Using a mass-analyzed beam of metallic ions rastered over the target at energies on the order of 100 eV and at substrate temperatures near 500°C, stoichiometric silicide films of varying thicknesses up to 300 nm have been formed on both n- and p-type Si. The advantages of this technique over other methods for silicide formation include good control of thickness by current integration, high purity due to the mass analysis, and control of incident ion energy which permits formation of the disilicide phase at low temperatures, thereby minimizing the thermal budget and the associated dopant diffusion in the underlying substrate. Films were characterized by Rutherford backscattering, transmission electron microscopy, and electrical measurements. Co, Fe, Ni, Ti, and W silicides have been formed by this direct deposition process. The effectiveness of the technique has been found to be dependent upon the diffusion characteristics of the particular metal/Si couple involved, with systems in which Si is the dominant diffuser, such as Ti/Si, giving the best results. Stoichiometric TiSi2 films produced at 550°C by this process show low bulk-like resistivity (15 μΩ-cm) without subsequent high-temperature annealing. All of these characteristics make silicide formation by IBD attractive for integrated circuit fabrication and shallow junction technology.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

scholarly journals Study of the Molecule Adsorption Process during the Molecular Doping

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1899
Author(s):  
Mattia Pizzone ◽  
Maria Grazia Grimaldi ◽  
Antonino La La Magna ◽  
Neda Rahmani ◽  
Silvia Scalese ◽  
...  
Keyword(s):  
Density Functional ◽  
Electrical Characterization ◽  
Molecular Surface ◽  
Doping Profile ◽  
Electrical Measurements ◽  
Self Assembled Monolayer ◽  
Depth Study ◽  
Molecular Doping ◽  
Dopant Atoms ◽  
Molecular Layers

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules–substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

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