Variations of Interfacial Roughness with Epilayer Thickness and Scaling Behavior in Si1−x,Gex, Grown on Si(100) Substrates

1994 ◽  
Vol 367 ◽  
Author(s):  
Z. H. Ming ◽  
S. Huang ◽  
Y. L. Soo ◽  
Y. H. Kao ◽  
T. Carns ◽  
...  
Keyword(s):  
Scaling Law ◽  
Grazing Incidence ◽  
Sample Surface ◽  
Thin Layers ◽  
Roughness Parameters ◽  
X Ray Diffraction ◽  
Interfacial Roughness ◽  
X Ray ◽  
Buried Interfaces ◽  
X Ray Scattering

AbstractRoughness parameters of sample surface and buried interfaces in a series of thin layers of Si0.4 GeO.6 grown on Si(100) by molecular beam epitaxy (MBE) were measured by using the technique of grazing-incidence x-ray scattering (GIXS). The strain in the layer and the critical thickness of the film were determined from x-ray diffraction of the Si(004) peak. The roughness parameters can be described by a scaling-law with an exponent β = 0.71 for both the surface and interfacial roughness. Establishment of a scaling law thus allows a possibility of predicting the interfacial roughness as a function of the epilayer thickness.

New Structure of CTAB Templated Silica Films as revealed by GISAXS coupled to HRTEM

2000 ◽  
Vol 628 ◽  
Author(s):  
Sophie Besson ◽  
Catherine Jacquiod ◽  
Thierry Gacoin ◽  
André Naudon ◽  
Christian Ricolleau ◽  
...  
Keyword(s):  
Cetyltrimethylammonium Bromide ◽  
Grazing Incidence ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Electronic Microscopy ◽  
Silica Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Hexagonal Arrangement ◽  
Spherical Micelles

ABSTRACTA microstructural study on surfactant templated silica films is performed by coupling traditional X-Ray Diffraction (XRD) and Transmission Electronic Microscopy (TEM) to Grazing Incidence Small Angle X-Ray Scattering (GISAXS). By this method it is shown that spin-coating of silicate solutions with cationic surfactant cetyltrimethylammonium bromide (CTAB) as a templating agent provides 3D hexagonal structure (space group P63/mmc) that is no longer compatible with the often described hexagonal arrangement of tubular micelles but rather with an hexagonal arrangement of spherical micelles. The extent of the hexagonal ordering and the texture can be optimized in films by varying the composition of the solution.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

Corrections for surface X-ray diffraction measurements using theZ-axis geometry: finite size effects in direct and reciprocal space

2000 ◽  
Vol 33 (4) ◽  
pp. 1006-1018 ◽  
Author(s):  
O. Robach ◽  
Y. Garreau ◽  
K. Aïd ◽  
M. B. Véron-Jolliot
Keyword(s):  
Correction Factor ◽  
Finite Size ◽  
Grazing Incidence ◽  
Sample Surface ◽  
Finite Width ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Shape ◽  
Sample Approximation ◽  
Effective Part

X-ray diffraction data have to be corrected by geometrical correction factors prior to any quantitative analysis. Here the case of grazing incidence X-ray diffraction measurements is considered, including the case of high exit angles. First, an approach taking into account the evolution of the diffracting area during an ω scan is presented. From the calculation of the effective part of the sample surface that participates in the diffraction phenomena at each step of the scan, a more accurate correction factor than those commonly used is derived and the evolution of the line shape along a zero-width rod is explained. Secondly, the case of finite-width rods, under the point-like sample approximation, is considered: the influence of the partial integration, as a result of the detector in-plane acceptance, of a rod with an anisotropic in-plane shape, is studied and leads to an analytical expression for the corresponding correction factor. Finally, a full numerical simulation is presented, which provides an alternative method for correcting the experimental intensities and shows in which conditions the previous formulae are no longer valid.

X-RAY DIFFRACTION FOR SURFACES AND BURIED INTERFACES

2000 ◽  
Vol 07 (04) ◽  
pp. 437-446 ◽  
Author(s):  
G. RENAUD
Keyword(s):  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Buried Interfaces ◽  
Surfaces And Interfaces ◽  
Coherent Interfaces

The application of X-rays to the structural characterization of surfaces and interfaces, in situ and in UHV, is discussed on selected examples. Grazing incidence X-ray diffraction is not only a very powerful technique for quantitatively investigating the atomic structure of surfaces and interfaces, but is also very useful for providing information on the interfacial registry for coherent interfaces or on the strain deformation, island and grain sizes for incoherent epilayers.

X-Ray Grazing Angle Scattering and Fluorescence Studies of Interfacial Microstructures in Si1-xGex/Si Multilayers

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. H. Ming ◽  
A. Krol ◽  
Y. L. Soo ◽  
Y. H. Kao ◽  
J. S. Park ◽  
...  
Keyword(s):  
Angular Dependence ◽  
Grazing Angle ◽  
Grazing Incidence ◽  
Fluorescence Yield ◽  
Interfacial Roughness ◽  
Density Profiles ◽  
X Ray ◽  
Fluorescence Studies ◽  
X Ray Scattering ◽  
Angle Scattering

ABSTRACTAngular dependence of grazing incidence x-ray scattering and Ge fluorescence yield were measured for the heterostructures of Si1-xGex/Si and the inverted bilayer Si/Si1-xGex as well as two 10-period superlattices. Interfacial roughness, correlation of height fluctuations between interfaces and Ge density profiles in the multilayers were investigated.

Interface Structure of Epitaxial Nb Films on Sapphire: Grazing Incidence X-Ray Diffraction and X-Ray Reflectivity Studies

1990 ◽  
Vol 209 ◽  
Author(s):  
C. H. Lee ◽  
K. S. Liang ◽  
F. S. Shieu ◽  
S.L. Sass ◽  
C. P. Flynn
Keyword(s):  
Grazing Incidence ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Buried Interfaces ◽  
Diffraction Effects

ABSTRACTThe interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence x-ray diffraction and x-ray reflectivity measurements. Specifically, the use of these x-ray techniques in probing the buried interfaces was demonstrated. Diffraction effects were observed which are consistent with the presence of misfit dislocations in the interface.

Thermal Stability and Internal Stress for Strongly (111) Oriented Cu Films

2003 ◽  
Vol 795 ◽  
Author(s):  
Sinji Takayama ◽  
Makato Oikawa ◽  
Tokuji Himuro
Keyword(s):  
Thermal Stability ◽  
Strain Distribution ◽  
Film Surface ◽  
Grazing Incidence ◽  
Internal Stresses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
X Ray Scattering ◽  
Thermal Stability Of

ABSTRACTInternal stresses and thermal stability of strongly (111) oriented Cu thin films, which are one of promising interconnect materials in advanced ULSI devices, have been studied comparing with those of non-oriented Cu films. Their internal stresses parallel to a film surface were measured by a conventional X-ray diffraction technique (d-spacing vs. sin2ψ method), while the strain distribution with depth by a grazing incidence X-ray scattering (GIXS) methods. Large stress relaxation in strongly (111) oriented Cu films takes place at 200°C without showing any significant grain growth and formation of thermal defects like hillocks. The residual internal stresses of highly oriented (111) Cu films increase almost linearly throughout the thickness up to the substrates. The feature of stress distribution in film depth does not change on annealing. The changes of the residual stresses at each depth are nearly the same as stresses parallel to film surface measured.

High-Resolution X-Ray Diffraction Measurements of SiGe/Si Structures

1994 ◽  
Vol 375 ◽  
Author(s):  
J. L. Jordan-Sweet ◽  
P. M. Mooney ◽  
G. B. Stephenson
Keyword(s):  
High Resolution ◽  
Alloy Composition ◽  
Strain Relaxation ◽  
Grazing Incidence ◽  
Diffraction Peak ◽  
Thin Layers ◽  
High Flux ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction

AbstractHigh-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables us to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows us to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. We demonstrate the power of these techniques with two examples.

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