Interface Structure of Epitaxial Nb Films on Sapphire: Grazing Incidence X-Ray Diffraction and X-Ray Reflectivity Studies

1990 ◽  
Vol 209 ◽  
Author(s):  
C. H. Lee ◽  
K. S. Liang ◽  
F. S. Shieu ◽  
S.L. Sass ◽  
C. P. Flynn
Keyword(s):  
Grazing Incidence ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Buried Interfaces ◽  
Diffraction Effects

ABSTRACTThe interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence x-ray diffraction and x-ray reflectivity measurements. Specifically, the use of these x-ray techniques in probing the buried interfaces was demonstrated. Diffraction effects were observed which are consistent with the presence of misfit dislocations in the interface.

Reconstructed Structure of SiO2/Si(111) Interface

1990 ◽  
Vol 208 ◽  
Author(s):  
Ichiro Hirosawa ◽  
Jun'ichiro Nizuki ◽  
Toru Tatsumi ◽  
Koichi Akimoto ◽  
Junji Matsui
Keyword(s):  
Molecular Beam ◽  
Structural Model ◽  
Oxidation Process ◽  
Grazing Incidence ◽  
Interface Structure ◽  
X Ray Diffraction ◽  
Initial Oxidation ◽  
X Ray ◽  
Diffraction Geometry ◽  
Symmetry Structure

ABSTRACTIn order to investigate the initial oxidation process Qf the Si (111) surface, we have studied the molecular beam deposited Si0 2/Si(111)-7×7 interface structure using grazing incidence X-ray diffraction geometry. We suggest a three-fold symmetry structural model composed of stacking fault layer, dimer layer and additional ordered atoms. The three-fold symmetry structure comes from the preference for oxidation in the faulted half of the 7×7 structure.

X-RAY DIFFRACTION FOR SURFACES AND BURIED INTERFACES

2000 ◽  
Vol 07 (04) ◽  
pp. 437-446 ◽  
Author(s):  
G. RENAUD
Keyword(s):  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Buried Interfaces ◽  
Surfaces And Interfaces ◽  
Coherent Interfaces

The application of X-rays to the structural characterization of surfaces and interfaces, in situ and in UHV, is discussed on selected examples. Grazing incidence X-ray diffraction is not only a very powerful technique for quantitatively investigating the atomic structure of surfaces and interfaces, but is also very useful for providing information on the interfacial registry for coherent interfaces or on the strain deformation, island and grain sizes for incoherent epilayers.

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

1990 ◽  
Vol 202 ◽  
Author(s):  
H. H. Hung ◽  
K. S. Liang ◽  
C. H. Lee ◽  
T.-M. Lu
Keyword(s):  
Annealed Film ◽  
Grazing Incidence ◽  
Misfit Strain ◽  
Interfacial Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Incommensurate Structure ◽  
Before And After ◽  
Beam Deposition

ABSTRACTWe report the results of our x-ray diffraction studies on epitaxial Al(111)/Si(111) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

1990 ◽  
Vol 208 ◽  
Author(s):  
H. H. Hung ◽  
K. S. Liang ◽  
C. H. Lee ◽  
T.-M. Lu
Keyword(s):  
Annealed Film ◽  
Grazing Incidence ◽  
Misfit Strain ◽  
Interfacial Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Incommensurate Structure ◽  
Before And After ◽  
Beam Deposition

ABSTRACTWe report the results of our x-ray diffraction studies on epitaxial Al(lll)/Si(lll) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

scholarly journals X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 868-873 ◽  
Author(s):  
Peter Zaumseil ◽  
Grzegorz Kozlowski ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder
Keyword(s):  
Tensile Strain ◽  
Chemical Vapour ◽  
Grazing Incidence ◽  
Silicon On Insulator ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Soi Substrates ◽  
Nanostructured Si

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

Direct observation of the interface structure of thin YBa2Cu3Oxfilm (<500 Å) deposited on SrTiO3(001) utilizing grazing incidence x‐ray diffraction

1994 ◽  
Vol 65 (13) ◽  
pp. 1720-1722 ◽  
Author(s):  
Tsai‐Sheng Gau ◽  
Shih‐Lin Chang ◽  
Hsueh‐Hsing Hung ◽  
Chih‐Hao Lee ◽  
Tung‐Wuu Huang ◽  
...  
Keyword(s):  
Direct Observation ◽  
Grazing Incidence ◽  
Interface Structure ◽  
X Ray Diffraction ◽  
X Ray

Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
Chang-Soo Kim ◽  
Ji-Hyun Moon ◽  
Sang-Jun Lee ◽  
Sam-Kyu Noh ◽  
Je Won Kim ◽  
...  
Keyword(s):  
Incidence Angle ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterned Substrate ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

AbstractThe structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.

Surface and interface structure of Nd1.2Ba1.8Cu3Oy epitaxial films studied by grazing incidence X-ray diffraction

2005 ◽  
Vol 486 (1-2) ◽  
pp. 178-181 ◽  
Author(s):  
M. Salluzzo ◽  
A. Fragneto ◽  
G.M. de Luca ◽  
U. Scotti di Uccio ◽  
X. Torrelles
Keyword(s):  
Grazing Incidence ◽  
Interface Structure ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface

Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001]

1995 ◽  
Vol 379 ◽  
Author(s):  
Dirk Rose ◽  
Ullrich Pietsch
Keyword(s):  
Angular Position ◽  
Grazing Incidence ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction ◽  
Gaas Barrier ◽  
Out Of Plane ◽  
Orientational Distribution ◽  
Average Size

ABSTRACTThe depth profile of the defect structure in strained and partially relaxed Ga0.8In0.2As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm.The strength of the method is demonstrated on a sample series with similar thickness of the Ga0.8In0.2As sublayers, ta, but with varying thickness of the GaAs barrier, tb.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing ta the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements.

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