Visualization of Atmospheric Pressure Chemical Vapor Deposition and Powder Spray Pyrolysis by Laser Light Scattering

1994 ◽  
Vol 363 ◽  
Author(s):  
Limin Mao ◽  
Ogie Stewart ◽  
Gene P. Reck ◽  
James W. Proscia
Keyword(s):  
Chemical Vapor Deposition ◽  
Light Scattering ◽  
Spray Pyrolysis ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Laser Light ◽  
Chemical Vapor ◽  
Ambient Air ◽  
Laser Light Scattering ◽  
Pressure Chemical

AbstractAtmospheric Pressure Chemical Vapor Deposition (APCVD) and powder spray pyrolysis are both pyrolytic thin film deposition techniques that are used to coat glass with thin films at atmospheric pressure. In the present study, the fluid dynamics of each process was investigated by laser light scattering. For each system, a 193 nm ArF excimer laser pulsed at 7 Hz was used for the analysis. In the case of the APCVD reactor, the difference in Rayleigh scattering between helium injected in the reactor and ambient air was used to characterize the process. For the powder spray process, laser scattering off the sprayed powder was used. The effect of various parameters is discussed.

The Utility of Laser Light Scattering in Assessing the Mixability of Reagents for Chemical Vapor Deposition

1993 ◽  
Vol 324 ◽  
Author(s):  
Bin Ni ◽  
Gene P. Reck ◽  
James W. Proscia
Keyword(s):  
Chemical Vapor Deposition ◽  
Light Scattering ◽  
Titanium Nitride ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Laser Light ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Laser Light Scattering ◽  
Tin Oxide Films

AbstractThe premixability of reagents used in chemical vapor deposition reactors is important to insure that gas feed lines and nozzles do not become clogged with particulates during operation. Even if reactants are to be kept separate until introduced into a reaction chamber, it is desirable to limit the number of particles formed. A reactor which utilizes laser light scattering to monitor particulate formation when gaseous reagents are mixed is described. The reaction of tin (IV) chloride with water is commonly used to produce tin oxide films by chemical vapor deposition. It was found by the light scattering experiment that at temperatures above about 110°C the number of particulates formed is greatly reduced. Therefore, it would be most desirable that these reagents be mixed above this temperature when depositing tin oxide from this reaction. The reaction of titanium tetrachloride with various amine was also investigated by this method. This reaction has been demonstrated to produce titanium nitride above 450°C. For each case, it was observed that there was a temperature above which the number of particulates was significantly reduced. This temperature was always below the optimal temperature for producing titanium nitride films.

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

Sign in / Sign up

Export Citation Format

Share Document