Fabrication of Diamond and Diamond-Like Carbon by Low Pressure Inductively Coupled Plasma CVD

1994 ◽  
Vol 363 ◽  
Author(s):  
Katsuyuki Okada ◽  
Shojiro Komatsu ◽  
Takamasa Ishigaki ◽  
Seiichiro Matsumoto
Keyword(s):  
Electron Diffraction ◽  
Inductively Coupled Plasma ◽  
High Energy ◽  
Diamond Like Carbon ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Plasma Cvd ◽  
Inductively Coupled ◽  
Transmission Electron ◽  
Faraday Shield

AbstractA 13.56 MHz inductively coupled plasma(ICP) system has been applied to fabricate diamond and diamond-like carbon from a CH4/H2/Ar plasma. The characterizations of the obtained deposits by transmission electron diffraction, reflection high energy electron diffraction, and Raman scattering revealed that the deposits are diamond crystallites, with crystal sizes ∼1μm, and that they partially include disordered microcrystalline graphite. Although contamination due to etching of the quartz tube exists, this was drastically suppressed by the electrostatic shield(Faraday shield).

Preparation of microcrystalline diamond in a low pressure inductively coupled plasma

1999 ◽  
Vol 14 (2) ◽  
pp. 578-583 ◽  
Author(s):  
Katsuyuki Okada ◽  
Shojiro Komatsu ◽  
Seiichiro Matsumoto
Keyword(s):  
Electron Diffraction ◽  
Inductively Coupled Plasma ◽  
Low Pressure ◽  
Growth Conditions ◽  
High Energy ◽  
Diamond Growth ◽  
Inductively Coupled ◽  
Transmission Electron ◽  
Effective Role ◽  
Electrostatic Coupling

A 13.56 MHz low pressure inductively coupled plasma (ICP) has been applied to prepare diamond films. The Faraday shield drastically suppressed the electrostatic coupling, which frequently causes contamination due to the etching of the quartz tube. The characterizations of the obtained deposits by scanning electron microscopy (SEM), transmission electron diffraction (TED), and reflection high energy electron diffraction (RHEED) revealed that the deposits are composed of microcrystalline diamond and disordered microcrystalline graphite. The CO additive to a CH4/H2 plasma brought about the morphological change from a scale-like deposit to a particle one. Besides, the number of encountered particles was increased with an increase of CO additive. The TED and RHEED observations showed that non-diamond carbon was effectively removed with an increase of CO additive. These results indicate that oxygen-contained radicals produced by the addition of CO play an effective role in the removal of non-diamond carbon in the diamond growth conditions and that the CO additive makes the supersaturation degree of carbon large.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

scholarly journals Mechanochemical Synthesis of Nanocrystalline Hydroxyapatite Coating

2010 ◽  
Vol 12 (2) ◽  
pp. 79 ◽  
Author(s):  
Ahmed E. Hannora ◽  
Alexander S. Mukasyan ◽  
Zulkhair A. Mansurov
Keyword(s):  
Heat Treatment ◽  
Phase Transformation ◽  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
High Energy ◽  
Transformation Process ◽  
Paramagnetic Resonance ◽  
Inductively Coupled ◽  
Novel Approach ◽  
Transmission Electron

A novel approach for depositing of hydroxyapatite (HA) films on titanium substrates by using high energy ball milling (HEBM) has been developed. It was demonstrated that a heat treatment of the mechanically coated HA at 800 °C for one hour leads to partial transformation of HA phase to -TCP. It appears that the grain boundary and interface defects formed during MCS reduce this characteristic transformation temperature. Also, it was shown that Ti incorporation into the HA structure causes the lattice shrinkage and reduction of its grain size as compared to pure HA, but also promote the phase transformation of HA to TCP at high temperature. It is important that doping HA by silicon, while also significantly decrease crystallinity of deposited HA layer, results in hindering of the phase transformation process. The Si-doped HA does not show phase transition or decomposition after heat treatment even at<br />900 °C. The samples were investigated by X-ray diffraction, scanning electron microscope, Energy dispersive spectroscopy, Atomic force microscopy, Transmission electron microscopy, inductively coupled plasma (ICP) optical emission spectrometer, Vickers microhardness, Electron paramagnetic resonance.

A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
P. D. Brown ◽  
D. M. Tricker ◽  
Y. Xin ◽  
T. S. Chengt ◽  
C. T. Foxont ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Energy ◽  
High Energy Electron ◽  
Conventional Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Spectral Distributions ◽  
Scanning Electron

AbstractEpitaxial GaN grown by MBE has been characterised using the combined techniques of scanning electron microscopy / cathodoluminescence, reflection high energy electron diffraction (RHEED), and conventional transmission electron microscopy. Variations in spatial and spectral distributions of luminescence can arise due to embedded cubic inclusions within the hexagonal GaN matrix. The strong effect of doping on the crystallinity of the GaN deposit is illustrated, as determined by RHEED in a TEM.

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