A transmission electron microscopy and reflection high‐energy electron diffraction study of the initial stages of the heteroepitaxial growth of InSb on GaAs (001) by molecular beam epitaxy

1990 ◽  
Vol 67 (2) ◽  
pp. 800-806 ◽  
Author(s):  
X. Zhang ◽  
A. E. Staton‐Bevan ◽  
D. W. Pashley ◽  
S. D. Parker ◽  
R. Droopad ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
Transmission Electron

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

MBE-Grown Epitaxial Co/Cr Superlattices

1991 ◽  
Vol 231 ◽  
Author(s):  
W. Vavra ◽  
S. Elagoz ◽  
Roy Clarke ◽  
C. Uher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Squid Magnetometry ◽  
High Energy Electron ◽  
Deposition Rates ◽  
Saturation Field ◽  
Transmission Electron ◽  
Hall Effect Measurements

AbstractA series of epitaxial Co/Cr superlattices has been grown by molecular beam epitaxy. The Cr is in a metastable hcp phase as confirmed by transmission electron microscopy, selected area diffraction, and reflection high energy electron diffraction. The Cr layers are 10Å thick in all samples while the Co layers are varied from 12Å to 40Å. The diffusion between Co and Cr is studied by SQUID magnetometry and indicates step-like interfaces in the best samples. Interfacial sharpness has also been found to be unusually sensitive to Co deposition rates, and in contrast with other superlattice systems, we find that sharper interfaces enhance parallel anisotropy. Hall effect measurements of the saturation field are within 10% of SQUID values. Magnetoresistance at 4.2K is only 1/3% which we believe is a consequence of the high density of states at the Fermi level of hcp Cr.

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