Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Activation Energy ◽  
Porous Silicon ◽  
Power Law ◽  
Current Density ◽  
Crystalline Silicon ◽  
Exponential Law ◽  
Current Voltage ◽  
Device Applications ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

Peculiarities of the current-voltage characteristics of oxidized porous silicon

2003 ◽  
Vol 29 (6) ◽  
pp. 459-460 ◽  
Author(s):  
M. S. Ablova ◽  
M. V. Zamoryanskaya ◽  
V. I. Sokolov ◽  
R. I. Khasanov
Keyword(s):  
Porous Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

Tunneling Conductivity in Thermally Oxidized Porous Silicon

2003 ◽  
Vol 770 ◽  
Author(s):  
Dmitrii G. Yarkin ◽  
Leonid A. Balagurov ◽  
Andrei F. Orlov ◽  
Igor P. Zvyagin
Keyword(s):  
Porous Silicon ◽  
Space Charge ◽  
Forward Bias ◽  
Exponential Dependence ◽  
Si Substrates ◽  
Current Voltage ◽  
Tunneling Conductivity ◽  
Type C ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

AbstractMetal/PS/c-Si structures with porous silicon (PS) layers of 55-75% porosity were fabricated on moderately doped p- and n-type c-Si substrates and were thermally oxidized at 400-960°C. The effect of oxidation on the photoluminescence and the transport of charge carriers in these structures were studied. We demonstrated that trap-filled space charge limited current (SCLC) is the dominant transport mechanism at large forward bias. The analysis of the current – voltage characteristics in the SCLC region allowed us to determine the oxidation dependence of the effective thickness of the trap-rich tissue isthmuses, in which space charge is mostly accumulated. The exponential dependence of the ohmic conductance on the thickness of SiOX tissue is explained by tunneling of carriers through potential barriers formed by the tissue surrounding silicon crystallites.

The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Low Frequency ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Solar Cell Application ◽  
Current Voltage ◽  
Frequency Plasma ◽  
Device Applications

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

scholarly journals Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

2020 ◽  
Vol 54 (3) ◽  
pp. 285
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  
Keyword(s):  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tunnel Diode ◽  
Tunnel Diodes ◽  
Tunnel Current ◽  
Type Layer ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

1997 ◽  
Vol 31 (12) ◽  
pp. 1221-1224 ◽  
Author(s):  
T. Ya. Gorbach ◽  
S. V. Svechnikov ◽  
P. S. Smertenko ◽  
P. G. Tul’chinskii ◽  
A. V. Bondarenko ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Current Voltage ◽  
Current Voltage Characteristics

ELECTRONIC STRUCTURE AND CONDUCTIVITY OF HYDROCARBON FILMS OBTAINED IN PLASMA DISCHARGES OF TOKAMAK T-10

1970 ◽  
Vol 61 (11) ◽  
Author(s):  
Galina A. Sokolina ◽  
Igor I. Arkhipov ◽  
Nikolay Yu. Svechnikov ◽  
Sergey A. Grashin
Keyword(s):  
Activation Energy ◽  
Electronic Structure ◽  
Temperature Dependence ◽  
Direct Current ◽  
Plasma Discharges ◽  
X Ray ◽  
Hydrocarbon Films ◽  
Direct Current Conductivity ◽  
Current Voltage ◽  
Current Voltage Characteristics

Amorphous hydrocarbon films on silicon substrates obtained in the chamber of tokamak T-10 with space-bounded deuterium plasma by carbon diaphragms were studied. Using the methods of spectrophotometry, ellipsometry, X-ray photoemission spectroscopy and X-ray excited Auger electron spectroscopy, it was established that the refraction and absorption coefficients of films, as well as the parameters of the electronic structure such as the magnitude of the band gap, the fraction of sp2-hybridized carbon and the chemical composition of impurities depend on the characteristics of the discharge in the tokamak. It is shown that the deposited films refer to high-resistance dielectrics, and they can be classified by optical properties as hard or soft amorphous hydrocarbon films, depending on the type of the plasma discharge (pulse working discharge or long-term low-energy cleaning discharge). Wherein, the conductivity of hard films is less than that of soft films, which corresponds to a smaller fraction of sp2-states of carbon in these films and to a higher value of the band gap. The current-voltage characteristics and the temperature dependence of the direct current conductivity of hard and soft films were measured. It was shown that in the temperature range of 293–550 K, the conductivity is determined by the hopping conductivity mechanism over localized states near the Fermi level and the boundaries of the allowed bands. The hopping conductivity mechanism is also indicated by the power law obtained at room temperature at alternating current with a value of a power exponent close to 0.8. The measurement of the current-voltage characteristics and the temperature dependence of the conductivity of hard and soft films showed a significant difference in the activation energy of conductivity and the conductivity at an elevated temperature. The established dependences of the direct current conductivity and the activation energy value of the films on the discharge parameters can be used as diagnostic benchmarks of different types of plasma discharges in a tokamak. Data on the electrical conductivity of the films are analyzed within the framework of the concept of the electronic structure of amorphous non-crystalline materials.  

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