Epitaxial growth of magnetoresistive (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on (001)Si substrates

1999 ◽  
Vol 74 (12) ◽  
pp. 1743-1745 ◽  
Author(s):  
J. Fontcuberta ◽  
M. Bibes ◽  
B. Martínez ◽  
V. Trtik ◽  
C. Ferrater ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Si Substrates

Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer

2004 ◽  
Vol 264 (1-3) ◽  
pp. 463-467 ◽  
Author(s):  
D. Akai ◽  
K. Hirabayashi ◽  
M. Yokawa ◽  
K. Sawada ◽  
M. Ishida
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrates

Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer

2002 ◽  
Vol 415 (1-2) ◽  
pp. 272-275 ◽  
Author(s):  
J Tashiro ◽  
A Sasaki ◽  
S Akiba ◽  
S Satoh ◽  
T Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Si Substrates

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

2005 ◽  
Vol 280 (3-4) ◽  
pp. 455-461 ◽  
Author(s):  
Jie Zhao ◽  
Lizhong Hu ◽  
Zhaoyang Wang ◽  
Zhijun Wang ◽  
Heqiu Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Zno Thin Films ◽  
Si Substrates

Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films

1994 ◽  
Vol 357 ◽  
Author(s):  
Jinshan Li ◽  
Robert Sinclair ◽  
Stephen S. Rosenblum ◽  
Hidetaka Hayashi
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Transition Layer ◽  
Barium Ferrite ◽  
Lattice Mismatch ◽  
Interface Reaction ◽  
Magnetic Thin Films ◽  
Point Of View ◽  
Si Substrates ◽  
Out Of Plane

AbstractUsing facing target sputtering, crystalline magnetoplumbite-type barium ferrite (BaFe12O19 or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as ZnFe2O4, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth.

Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg 2 SiO 4 Thin Films on Si Substrates

2007 ◽  
Vol 24 (12) ◽  
pp. 3528-3531 ◽  
Author(s):  
Kang Lin ◽  
Gao Ju ◽  
Xu Hua-Rong ◽  
Zhao Shao-Qi ◽  
Chen Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Si Substrates

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Sign in / Sign up

Export Citation Format

Share Document