High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

1994 ◽  
Vol 354 ◽  
Author(s):  
A. F. Myers ◽  
J. Liu ◽  
W. B. Choi ◽  
G. J. Wojak ◽  
J. J. Hren
Keyword(s):  
High Resolution ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emitters ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Polycrystalline Diamond Film

AbstractDiamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

Development Of Diamond Based Power Microelectronics

1997 ◽  
Vol 483 ◽  
Author(s):  
J. L. Davidson ◽  
W. P. Kang ◽  
Y. Gurbuz ◽  
D. V. Kerns ◽  
L. Davis ◽  
...  
Keyword(s):  
Diamond Film ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
High Energy ◽  
High Energy Density ◽  
Field Emitters ◽  
Device Structures ◽  
Electron Emitters ◽  
Polycrystalline Diamond Film

AbstractDiamond based power device structures such as resistor, capacitor, Schottky diode, p-n diode, thyristor, and field emitters are being investigated. Diamond resistors similar to standard thick film components in form and dimension were fabricated of polycrystalline diamond film. Using PECVD (plasma-enhanced chemical vapor deposition) processing to achieve diamond dielectric layers, high power, high energy density capacitors have been built. Despite grain boundaries and defects of polycrystalline diamond film, electronic devices such as field-effecttransistors and Schottky diodes have been developed. We have fabricated micro-patterned microtip arrays with this versatile new diamond technology as electron emitters. This paper will review diamond technology and results of this work.

Piezoresistivity of Polycrystalline Diamond Films

1992 ◽  
Vol 283 ◽  
Author(s):  
Der-Rern Wur ◽  
Jim L. Davidson
Keyword(s):  
High Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Gauge Factor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped ◽  
Radiation Hard ◽  
Polycrystalline Diamond Film

ABSTRACTPolycrystalline diamond film (PDF) is known for its high power, high temperature, and radiation hard potential. The interest in piezoresistivity of PDF is that it is a candidate for high temperature sensing (e.g., pressure sensor).Piezoresistivity measurements were taken of boron-doped PDF grown by microwave-plasma chemical vapor deposition(CVD). Three substrates, silicon, aluminum nitride and tungsten were used. Films were detached from these substrates, then attached to a ceramic substrate. The piezoresistivity varies, dependent on the original host substrate. For example, at room temperature, the PDF film from tungsten has a greater gauge factor, around 75. The carrier activation energy of this film, determined from log R(l/T), was nominally 0.25eV.Combining thick film technology and CVD processes, patterned B-doped PDF has been achieved monolithically on A1N substrates. The characteristics of this configuration is being investigated and will be presented.

Nano-Crystalline Diamond Films Deposited on Copper Substrate by MPCVD Method

2011 ◽  
Vol 117-119 ◽  
pp. 1310-1314
Author(s):  
Xing Rui Li ◽  
Xin Wei Shi ◽  
Ning Yao ◽  
Xin Chang Wang
Keyword(s):  
Diamond Film ◽  
Deposition Time ◽  
Microwave Plasma ◽  
Copper Substrate ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Adhesive Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Nano Crystalline

Nano-crystalline diamond (NCD) films with good adhesion were deposited on flexible copper substrate with Ni interlayer by Microwave Plasma Chemical Vapor Deposition (MPCVD). In this paper, two-stage method was used to improve the adhesion between the copper substrates and the diamond films. The effect of deposition time of the first stage on the morphology, crystal structure, non-diamond phase and adhesive properties of diamond films was investigated. The performance and structure of the diamond films were studied by Scanning Electron Microscope (SEM), Raman Spectroscopy (Raman) and X-Ray Diffraction (XRD). The results showed that the films were nano-crystalline diamond films positively. Impress method was used to examine the adhesion between diamond film and the substrate. When deposition time is 1.5h, the adhesion between diamond film and the copper substrate is better than the others. When it was 2.5h or longer, because the graphite layers existed as intermediate, the adherence between the diamond films and copper substrates was very poor. Therefore, the diamond films were easily peeled off from the substrates. Otherwise, the second stage called annealing process after the deposition played an important role to the adhesion. The films would be easily peeled off by curling without the annealing process.

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

Electrochemical Oxidation of Phenol in Water Solutions Using Nanocrystalline Boron-Doped Diamond Film Anode

2012 ◽  
Vol 1395 ◽  
Author(s):  
Jorge Arturo Lara Viera ◽  
Manoj K. Ram ◽  
Pedro Villalba ◽  
Mikhail Ladanov ◽  
Ashok Kumar
Keyword(s):  
Electrochemical Oxidation ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Water Solution ◽  
Chemical Vapor ◽  
Test Sample ◽  
Sample Solution ◽  
Boron Doped Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTThe present paper reports the utilization of a boron-doped nanocrystalline diamond film (BDD) in electrochemical oxidization (ECO) process of organic phenol compound in 0.1 M H2SO4 water solution. The nano BDD films were synthesized by microwave plasma chemical vapor deposition (MWPCVD), and then characterized by Raman spectroscopy and SEM before and after the electrochemical oxidation treatment. For the ECO treatment performed to the test sample solution, an observation of the first and the last voltammetric plots exhibited a qualitatively differences between the two plots where the first one represent the initial concentration and the last one the signal produced by the organic solution after treatment. UV-Vis analysis through the application of a standard calibration curve, quantitatively confirmed the composition of phenol remaining in the sample solution subdued to the ECO treatment.

High-resolution TEM and energy filtering TEM study of interfacial structure and reaction of diamond/Si in chemical vapor deposition

1995 ◽  
Vol 53 ◽  
pp. 272-273
Author(s):  
Fu-Rong Chen ◽  
L. Chang ◽  
C. J. Chen ◽  
T. S. Lin
Keyword(s):  
High Resolution ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Amorphous Layer ◽  
Interfacial Structure ◽  
Cross Sectional ◽  
Energy Filtering ◽  
Processing Step ◽  
Microwave Plasma Cvd ◽  
High Resolution Tem

Diamond film was grown using microwave plasma CVD technique which consists of three steps: carburization, bias and growth . The high resolution TEM (HRTEM) in cross-sectional view has been used to observe the evolution of interfacial structure in each processing step [1]. The chemistry near the interface was characterized with elemental mapping using energy-filtered imaging technique with Gatan imaging Filter (GIF) [2]. At the carburization stage, β-SiC, diamond particles and graphite plates have been observed in an amorphous layer. This amorphous layer was analysized to be carbon by energy filtering technique.As shown in the Fig. 1, β-SiC can form in epitaxial orientation with Si in the following stage of biasing. Graphite was not observed after the bias was applied. At the bias stage there is an interlayer of 6 nm thick between diamond and silicon substrate . From the high resoultion image in Fig. 2 (a), most of the regions of the interlayer are of amorphous characteristics which presents a barrier to identify the elemental compositions.

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