Piezoresistivity of Polycrystalline Diamond Films

1992 ◽  
Vol 283 ◽  
Author(s):  
Der-Rern Wur ◽  
Jim L. Davidson
Keyword(s):  
High Temperature ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Gauge Factor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped ◽  
Radiation Hard ◽  
Polycrystalline Diamond Film

ABSTRACTPolycrystalline diamond film (PDF) is known for its high power, high temperature, and radiation hard potential. The interest in piezoresistivity of PDF is that it is a candidate for high temperature sensing (e.g., pressure sensor).Piezoresistivity measurements were taken of boron-doped PDF grown by microwave-plasma chemical vapor deposition(CVD). Three substrates, silicon, aluminum nitride and tungsten were used. Films were detached from these substrates, then attached to a ceramic substrate. The piezoresistivity varies, dependent on the original host substrate. For example, at room temperature, the PDF film from tungsten has a greater gauge factor, around 75. The carrier activation energy of this film, determined from log R(l/T), was nominally 0.25eV.Combining thick film technology and CVD processes, patterned B-doped PDF has been achieved monolithically on A1N substrates. The characteristics of this configuration is being investigated and will be presented.

High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

1994 ◽  
Vol 354 ◽  
Author(s):  
A. F. Myers ◽  
J. Liu ◽  
W. B. Choi ◽  
G. J. Wojak ◽  
J. J. Hren
Keyword(s):  
High Resolution ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emitters ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Polycrystalline Diamond Film

AbstractDiamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

Electrical Properties of Hydrogen Terminated P-Type Diamond Film

2010 ◽  
Vol 663-665 ◽  
pp. 625-628
Author(s):  
Fu Yuan Xia ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
P Type ◽  
Effect Method

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

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