Contamination Monitoring Using Surface Photovoltage and Application to Process Line Control

1994 ◽  
Vol 354 ◽  
Author(s):  
Lubek Jastrzebski ◽  
Jacek Lagowski ◽  
Worth Henley ◽  
Piotr Edelman
Keyword(s):  
Heavy Metal ◽  
Silicon Wafer ◽  
Metal Contamination ◽  
Heavy Metal Contamination ◽  
Surface Photovoltage ◽  
Strong Function ◽  
Processing Information ◽  
Process Line ◽  
P Type ◽  
Processing Steps

AbstractSurface photovoltage (SPV) measurements of lifetime and charge are used by the silicon industry for real-time, non-contact monitoring of alkalide and heavy metal contamination during IC processing. Information about contamination present at the surface or in the bulk of a silicon wafer is derived from their effects on measured electronic characterization. Identification and detection, with a sensitivity of ppq (107 cm'3), of Fe and Cr in the bulk of p-type silicon is possible via monitoring of their decomposition/pairing kinetics with boron. We will show the most important examples of the application of SPV to monitor critical IC processing steps. The allowable contamination thresholds in IC processing lines are a very strong function of technology and are different for various metals.

Ultra-High Sensitivity Surface Photovoltage Measurement of Heavy Metal Contamination in Silicon Wafers with Fast Metal Identification

2018 ◽  
Vol 85 (6) ◽  
pp. 77-88
Author(s):  
Marshall Wilson ◽  
Alexandre Savtchouk ◽  
John D'Amico ◽  
Bret Schrayer ◽  
Dmitriy Marinskiy ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Metal Contamination ◽  
Heavy Metal Contamination ◽  
High Sensitivity ◽  
Silicon Wafers ◽  
Surface Photovoltage

Monitoring of Heavy Metal Contamination during Chemical Cleaning with Surface Photovoltage

2019 ◽  
Vol 140 (4) ◽  
pp. 1152-1159 ◽  
Author(s):  
L. Jastrzebski ◽  
O. Milic ◽  
M. Dexter ◽  
J. Lagowski ◽  
D. DeBusk ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Metal Contamination ◽  
Heavy Metal Contamination ◽  
Surface Photovoltage ◽  
Chemical Cleaning

A Novel Method For Studying Degradation Related To Plasma Processing Of Silicon Wafers

1996 ◽  
Vol 428 ◽  
Author(s):  
J. Lagowski ◽  
A. Hofl ◽  
L. Jastrzebski ◽  
P. Edelman ◽  
T. Esry
Keyword(s):  
Heavy Metal ◽  
Radiation Damage ◽  
Metal Contamination ◽  
Heavy Metal Contamination ◽  
Surface Photovoltage ◽  
Plasma Damage ◽  
Monitoring Tools ◽  
Novel Method ◽  
Dielectric Charge ◽  
New Generation

AbstractA new generation of monitoring tools based on oxide potential and surface photovoltage measurements offers real-time, non-contact diagnostics of plasma damage, especially dielectric charge build-up, radiation damage, and heavy metal contamination. The approach relies on reusable, 10 00Åoxide monitor wafers rather than test structures. The technique generates whole wafer maps powerful for correlating plasma damage with plasma equipment characteristics.

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