Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

1994 ◽  
Vol 354 ◽  
Author(s):  
L. Simon ◽  
A. Mesu ◽  
J. J. Grob ◽  
T. Heiser ◽  
J. L. Balladore
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
Thin Layer ◽  
Point Defects ◽  
Ion Beam ◽  
Limiting Factor ◽  
Thermally Activated ◽  
Infra Red ◽  
Thermally Activated Process

AbstractWe report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm . RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

Ion Implantation and Annealing Effects in Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Heera ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
High Power ◽  
High Frequency ◽  
Ion Beam ◽  
Surface Erosion ◽  
Annealing Effects ◽  
Ion Ranges ◽  
Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

scholarly journals Radiation-doped SiC*/Si heterostructure formation and defects evolution

2022 ◽  
Vol 2155 (1) ◽  
pp. 012012
Author(s):  
V I Chepurnov ◽  
M V Dolgopolov ◽  
A V Gurskaya ◽  
G V Puzyrnaya ◽  
D E Elkhimov
Keyword(s):  
Silicon Carbide ◽  
Thin Layer ◽  
Physical Properties ◽  
Point Defects ◽  
Silicon Substrates ◽  
Structural Level ◽  
Association Models ◽  
Level 1 ◽  
Radionuclide Impurity

Abstract The authors consider heterostructures of silicon carbide obtained during endotaxy on silicon substrates. The question is raised in connection with the description of the endotaxy process itself at the structural level. Authors focus on the technological aspects of the formation of a stable β-SiC/Si heterostructure by endotaxy in relation to the evolution of point defects of various nature and their probable association models with the participation of a radionuclide impurity at the micro-alloying level: 1) the growth of the SiC*/Si thin layer with C-14 atoms in the doping process; 2) physical properties of defects formation; 3) some interface between properties and efficiency.

Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide

1995 ◽  
Vol 396 ◽  
Author(s):  
A V. Suvorov ◽  
I.O. Usov ◽  
V.V. Sokolov ◽  
A.A. Suvorova
Keyword(s):  
Silicon Carbide ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Radiation Enhanced Diffusion ◽  
Sic Wafer

AbstractThe diffusion of aluminum in silicon carbide during high-temperature A1+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 x 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 x 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

scholarly journals DISTRIBUTION OF POINT DEFECTS IN THE SI-FAZE INCLUDING SIC-FAZE, FORMED BY ENDOTAXE METHOD OF SEMICONDUCTOR HETEROSTRUCTURES

2017 ◽  
Vol 18 (9) ◽  
pp. 164-179
Author(s):  
V.I. Tchepurnov
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Point Defects ◽  
High Frequency ◽  
Solid Phase ◽  
Normal Pressure ◽  
Semiconductor Heterostructures ◽  
Silicon Substrates ◽  
Isovalent Doping ◽  
Phase Process

Heteroepitaxy layers of silicon carbide on silicon substrates is one of the best candidates for high-power, high-temperature and high-frequency applications in electronics. Solid-phase process of endotaxe of silicon carbide is accompanied by evolution of Si-phase into Sic-one in hydrogen hydrocarbon atmosphere at temperature range 1360-1380 °C and normal pressure. The distribution of thermal intrinsic point defects of different nature in silicon substrates in dependence of the type of its conductivity and in conditions of isovalent doping of carbon is investigated in this paper.

Point Defects, Recovery Kinetics and Ordering in Irradiated Bulk Metallic Glasses

2007 ◽  
Vol 1048 ◽  
Author(s):  
Yuri Petrusenko ◽  
Alexander Bakai ◽  
Valeriy Borysenko ◽  
Dmitro Barankov ◽  
Oleksandr Astakhov ◽  
...  
Keyword(s):  
Point Defects ◽  
Metallic Glasses ◽  
Electrical Resistance ◽  
Amorphous Solids ◽  
Structural Defects ◽  
Thermally Activated ◽  
Local Ordering ◽  
Defect Mobility ◽  
Kinetics Of ◽  
Thermally Activated Process

AbstractThe problem of structural properties and structural defects of amorphous solids is still of vital importance. To make clear whether stable point defects exist in metallic glasses (MGs) or not, we have studied the accumulation and recovery kinetics of radiation defects in ZrTiCuNiBe and ZrTiCuNiAl bulk MGs irradiated with 2.5 MeV electrons at T ∼ 80 K. The electrical resistance measurements of the irradiated samples were performed. The recovery spectrum of irradiation-induced electrical resistance was measured for the 85–300 K temperature range. The most important result of the recovery experiments is that they clearly show the annealing stages for the irradiated samples. Two annealing peaks located at T∼150 K and T∼225 K are resolved for ZrTiCuNiBe glass. Similar peaks are also revealed for ZrTiCuNiAl. It can be concluded from the data that the defect mobility is a thermally activated process, and that the activation energy is not as high as that for vacancies in crystalline alloys. Thus, the data obtained testify in favor of the structure with “perfect” local ordering of atoms. It should be noted that this property is basic in the formulation of the polycluster model of amorphous solids.

Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness

2018 ◽  
Vol 924 ◽  
pp. 345-348
Author(s):  
Norihito Yabuki ◽  
Satoshi Torimi ◽  
Satoru Nogami ◽  
Makoto Kitabatake ◽  
Tadaaki Kaneko
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
Annealing Process ◽  
Tantalum Carbide ◽  
Sidewall Roughness ◽  
Round Shape ◽  
Wafer Thickness ◽  
Activation Annealing ◽  
Sic Wafer

We propose the Si-vapor ambient anneal as a cap-free activation annealing (A/A) method for Silicon Carbide (SiC) using Tantalum Carbide / Tantalum composite materials (TaC/Ta). This method prevents the roughening of SiC surface by controlling the process function without conventional Carbon (C)-cap [1,2]. In this report, we evaluated the warping behavior of SiC wafer to confirm the effect of ion implantation (I/I) temperature (TI/I) and epi-ready treatment using Si-vapor ambient anneal. Wafer warp suppressing effect of high temperature I/I was confirmed and large wafer warpage occurred due to thinning of the wafer thickness. Furthermore we also observed the simultaneous improvement of the sharp edge shape and sidewall roughness of the trench under the appropriate conditions of the Si-vapor ambient anneal. It is possible to shape the round shape of the trench edge and to improve the roughness of trench sidewall by Si-vapor ambient anneal simultaneously with activation annealing process.

High temperature ion implantation of silicon carbide

1995 ◽  
Vol 96 (1-2) ◽  
pp. 335-338 ◽  
Author(s):  
W. Wesch ◽  
A. Heft ◽  
E. Wendler ◽  
T. Bachmann ◽  
E. Glaser
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation

Atomistic Simulation Studies of the Effects of Defects on Thermal Properties of Ultra High Temperature Ceramics

2016 ◽  
Author(s):  
S. N. Medyanik ◽  
N. Vlahopoulos
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Thermal Properties ◽  
High Temperature ◽  
Point Defects ◽  
Atomistic Simulation ◽  
Atomistic Simulations ◽  
Hypersonic Vehicles ◽  
Simulation Studies ◽  
Ultra High Temperature Ceramics

Due to the harsh environments created by high speeds, significant new demands are placed on materials used for constructing hypersonic vehicles. Ultra high temperature ceramics (UHTCs) like carbides and borides exhibit unique thermal properties, such as very high melting points and good thermal conductivities. These properties make the ceramic materials good candidates for applications like Thermal Protection Systems (TPS) of the hypersonic vehicles. However, thermal properties of UHTCs may be very sensitive to microstructures of the materials. Thus, atomic scale defects may impact certain thermal properties, such as thermal conductivity. The effects of such small defects may be properly studied only through atomistic simulation methods, such as molecular dynamics (MD). Previously, atomistic simulation studies have been performed for the effects of point defects on thermal properties in silicon carbide (SiC). In addition, atomistic simulations have been applied to assess thermal conductivity in zirconium diboride (ZrB2) for perfect crystals and polycrystals. However, to our knowledge, no studies of the effects of point defects have been performed for zirconium diboride. This paper applies atomistic simulations to assess the impact of point defects on thermal conductivity in ZrB2 perfect crystals. Recently derived interatomic potential for ZrB2 along with LAMMPS molecular simulation package and MedeA software environment are employed in this effort. Phonon part of the thermal conductivity is calculated using Green-Kubo method. Calculations for a perfect crystal are conducted first and the results are compared to experimental data available from the literature. Then, several types of point defects are considered (vacancies, substitutions, and interstitials) and their impact on the phonon conductivity is evaluated. It is found that even a small concentration of point defects may have substantial effect and result in a reduction in the thermal conductivity values by almost an order of magnitude. The obtained results are in good qualitative agreement with previous studies conducted for silicon carbide. The methodology which is utilized in this work, the modeling procedure, and the obtained results are discussed in this paper.

The Modification of the Abrasion Resistance of Type IIa (110) Diamond Using Carbon and Nitrogen Implantation

1992 ◽  
Vol 242 ◽  
Author(s):  
Gregory C. Anderson ◽  
Steven Prawer ◽  
Peter N. Johnston
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Ion Beam ◽  
Nitrogen Implantation ◽  
Scratch Testing ◽  
Wear Properties ◽  
Carbon And Nitrogen ◽  
Diamond Indenter ◽  
Low Load ◽  
Abrasion Testing

ABSTRACTThe modification of the wear properties of type Ha diamond following ion implantation with 100 keV carbon and nitrogen has been studied at implantation temperatures of 150 and 470 K. Abrasion testing using low load multiple pass scratch testing with a Rockwell diamond indenter has shown a decrease in wear resistance. Microstructural modifications resulting from ion implantation have been assessed using Channeling Rutherford Backscattering Spectroscopy (C-RBS). No correlation was found between the presence of ion beam induced point defects (as measured by C-RBS) and the increase in wear. There are no obvious wear rate differences observed for nitrogen or carbon implantation.

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