The Modification of the Abrasion Resistance of Type IIa (110) Diamond Using Carbon and Nitrogen Implantation

1992 ◽  
Vol 242 ◽  
Author(s):  
Gregory C. Anderson ◽  
Steven Prawer ◽  
Peter N. Johnston
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Ion Beam ◽  
Nitrogen Implantation ◽  
Scratch Testing ◽  
Wear Properties ◽  
Carbon And Nitrogen ◽  
Diamond Indenter ◽  
Low Load ◽  
Abrasion Testing

ABSTRACTThe modification of the wear properties of type Ha diamond following ion implantation with 100 keV carbon and nitrogen has been studied at implantation temperatures of 150 and 470 K. Abrasion testing using low load multiple pass scratch testing with a Rockwell diamond indenter has shown a decrease in wear resistance. Microstructural modifications resulting from ion implantation have been assessed using Channeling Rutherford Backscattering Spectroscopy (C-RBS). No correlation was found between the presence of ion beam induced point defects (as measured by C-RBS) and the increase in wear. There are no obvious wear rate differences observed for nitrogen or carbon implantation.

Effect of Carbon and Nitrogen Implantation on the Properties of Silicon Nitrides

2005 ◽  
Vol 290 ◽  
pp. 160-166
Author(s):  
Péter Arató ◽  
Csaba Balázsi ◽  
Zsuzsanna Kövér ◽  
Ferenc Wéber ◽  
E. Richter ◽  
...  
Keyword(s):  
Bending Strength ◽  
Ion Beam ◽  
Hot Isostatic Pressing ◽  
Porous Ceramics ◽  
Carbon Ions ◽  
Nitrogen Implantation ◽  
Three Point Bending ◽  
Carbon And Nitrogen ◽  
Carbon Additives ◽  
Laser Treatments

This study focused on the effect of ion implantation on the mechanical properties of silicon nitride based ceramics. The examined materials contained 4% Al2O3, 6% Y2O3 and, in some cases, graphite or black carbon additives. Fully densified bodies were manufactured by two-step hot isostatic pressing, in other experiments pressureless sintering gave porous ceramics. Nitrogen or carbon ions with 190 keV or 350 keV were implanted, a part of samples obtained laser treatments for comparison. Measurements of elastic modulus, four point and three point bending strength were carried out at room temperature on sintered samples, partially sintered samples and sintered and oxidised samples. Carbon or nitrogen implantation influenced the strength of partially sintered samples only if the density was over 80%. Both the implantation of carbon or nitrogen ions and the laser treatment affected the bend strength of sintered samples, enlarging the power introduced its value first increased than decreased. Implantation slightly decreased the strength of samples oxidised at 1400 °C. Comparison of different mechanical characteristics may support a better understanding of phenomena during ion beam implantation or laser irradiation.

Industrial Applications of Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
J.K. Hirvoney
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Industrial Applications ◽  
The Other ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Aqueous Corrosion ◽  
Wear Reduction ◽  
Ion Species ◽  
Corrosion And Oxidation

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

1994 ◽  
Vol 354 ◽  
Author(s):  
L. Simon ◽  
A. Mesu ◽  
J. J. Grob ◽  
T. Heiser ◽  
J. L. Balladore
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
Thin Layer ◽  
Point Defects ◽  
Ion Beam ◽  
Limiting Factor ◽  
Thermally Activated ◽  
Infra Red ◽  
Thermally Activated Process

AbstractWe report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm . RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Computer Simulations ◽  
Point Defects ◽  
Numerical Optimization ◽  
Experimental Investigations ◽  
Shallow Junctions ◽  
Quantitative Explanation ◽  
Defect Densities

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

Synthesis of Iron Oxynitride by Nitrogen Ion Implantation of Iron Oxide

1988 ◽  
Vol 100 ◽  
Author(s):  
S. B. Ogale ◽  
Seema Teli ◽  
Sunita Chopda ◽  
D. M. Phase ◽  
S. M. Kanetkar
Keyword(s):  
Iron Oxide ◽  
Ion Implantation ◽  
Conversion Electron ◽  
Mossbauer Spectroscopy ◽  
Nitrogen Implantation ◽  
Nitrogen Ion Implantation ◽  
Conversion Electron Mössbauer Spectroscopy ◽  
Conversion Electron Mossbauer Spectroscopy ◽  
Implantation Process ◽  
Nitrogen Ion

ABSTRACTThe effect of N2+ ion implantation in ∝-Fe2O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy (CEMS). It Is shown that at a dose value of 1×1017 ions/cm2 and 3×1017 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process.

Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

1997 ◽  
Vol 153-155 ◽  
pp. 137-158 ◽  
Author(s):  
Emanuele Rimini ◽  
Salvatore Coffa ◽  
Sebania Libertino ◽  
G. Mannino ◽  
F. Priolo ◽  
...  
Keyword(s):  
Point Defects ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Basic Research ◽  
And Migration

scholarly journals A Study on the Wettability of Ion-Implanted Stainless and Bearing Steels

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 208 ◽  
Author(s):  
Xinchun Chen ◽  
Xuan Yin ◽  
Jie Jin
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Ion Beam ◽  
Bearing Steel ◽  
Contact Angles ◽  
Electrochemical Technique ◽  
Near Surface ◽  
Thermodynamic Stabilization ◽  
Deposition Processes ◽  
Surface Modified

To satisfy the harsh service demand of stainless steel and aviation bearing steel, the anticorrosion and wettability behaviors of 9Cr18 stainless steel and M50 bearing steel tailored by ion beam surface modification technology were experimentally investigated. By controlling the ion implantation (F+, N+, N+ + Ti+) or deposition processes, different surface-modified layers and ceramic layers or composite layers with both effects (ion implantation and deposition processes) were obtained on metal surfaces. The wettability was characterized by a contact angle instrument, and the thermodynamics stabilization of ion implantation-treated metals in corrosive solution was evaluated through an electrochemical technique. X-ray photoelectron spectroscopy (XPS) was employed for detecting the chemical bonding states of the implanted elements. The results indicated that ion implantation or deposition-induced surface-modified layers or coating layers could increase water contact angles, namely improving hydrophobicity as well as thermodynamic stabilization in corrosive medium. Meanwhile, wettability with lubricant oil was almost not changed. The implanted elements could induce the formation of new phases in the near-surface region of metals, and the wettability behaviors were closely related to the as-formed ceramic components and amorphous sublayer.

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