Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic Orientation Control

1984 ◽  
Vol 35 ◽  
Author(s):  
K. Egami ◽  
M. Kimura ◽  
T. Hamaguchi ◽  
N. Endo
Keyword(s):  
Crystallographic Orientation ◽  
Laser Power ◽  
Dwell Time ◽  
Texture Formation ◽  
Molten State ◽  
Seed Formation ◽  
Orientation Control ◽  
Laser Recrystallization ◽  
Ion Laser ◽  
Lateral Epitaxy

ABSTRACTWe demonstrate a new two step laser recrystallization for crystallographic orientation control. In the cw Ar ion laser recrystallization of silicon stripes in the structure consisting of SiO2 grooves/polycrystalline Si sublayer/backing substrates, first, one edge of poly-Si stripes is intentionally recrystallized under relatively low laser power and a long dwell time in order to form a strong <100> texture with lamellar grains, second, poly-Si stripes are fully recrystallized using the above <100> texture as seed crystals by scanning a laser beam along the stripes. We discuss a strong <100> texture formation related to partially molten state in the first process of secondary seed formation, and use of a grooved structure with poly-Si sublayer suppressing edge nucleation during lateral epitaxy.

Subboundary Free Submicronic Devices on Laser-Recrystallized Silicon Oninsulator

1984 ◽  
Vol 35 ◽  
Author(s):  
A.J. Auberton-Herve ◽  
J.P. Joly ◽  
J.M. Hode ◽  
J.C. Castagna
Keyword(s):  
Channel Length ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Mos Transistors ◽  
Seed Structure ◽  
Leakage Currents ◽  
Industrial Processing ◽  
Laser Recrystallization ◽  
Dynamic Performances ◽  
Lateral Epitaxy

ABSTRACTSeeding from bulk silicon (lateral epitaxy) has been used in Ar+ laser recrystallization to achieve subboundary free silicon on insulator areas. On these areas C.MOS devices have been performed using almost entirely the standard processing steps of a bulk micronic C-MOS technology. n -MOS transistors with channel length as small as 0.3 um have shown very small leakage currents. This is attributed especially to the lack of subboundaries. A 40 % increase in the dynamic performances in comparison with equivalent size C-MOS bulk devices has been obtained (93 ps of delay time per stage for a 101 stages ring oscillator with 0.8 μm of channel length). This is the best result presented so far on recrystallized SOI. No special requirements are needed in the lay out of the circuit with the chosen seed structure. Furthermore an industrial processing rate for the laser recrystallization processing has been achieved using an elliptical laser beam, a high scan velocity (30 cm/s) and a 100 μm line to line scan step (a 4' wafer in 4 minutes).

A New Double Laser Recrystallization Technique to Induce Ultra-Large Poly-Si Grains

2001 ◽  
Vol 685 ◽  
Author(s):  
Minghong Lee ◽  
Seungjae Moon ◽  
Mutsuko Hatano ◽  
Costas P. Grigoropoulos
Keyword(s):  
Grain Growth ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Laser Power ◽  
Laser Flash ◽  
Process Window ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Laser Recrystallization ◽  
Nucleation Sites

AbstractA new double laser recrystallization technique that can produce lateral grains of tens of micrometers is presented. A nanosecond laser (excimer or Nd:YLF laser) and a pulse modulated Ar+ laser are used in the experiment. The effect of different parameters on lateral grain growth is investigated. These parameters include the time delay between the two lasers, the excimer laser fluence, the Ar+ laser power and the pulse duration. This process has wide process window and is insensitive to both the excimer laser fluence and the Ar+ laser power fluctuations. Preheating and melting of the a-Si film with the Ar+ laser before firing the excimer laser is found to be necessary for inducting lateral grain growth. The transient excimer laser irradiation is believed to generate nucleation sites for initiating the subsequent lateral grain growth. The solidification dynamics of the process is probed by high spatial and temporal resolution laser flash photography. A lateral solidification velocity of about 10 m/s is observed.

scholarly journals LaTiO2N crystallographic orientation control significantly increases visible-light induced charge extraction

2020 ◽  
Vol 8 (43) ◽  
pp. 22867-22873
Author(s):  
Eric Burns ◽  
Ulrich Aschauer ◽  
Max Döbeli ◽  
Christof W. Schneider ◽  
Daniele Pergolesi ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Crystallographic Orientation ◽  
Orientation Control ◽  
Induced Charge ◽  
Charge Extraction

Visible-light induced photocharge extraction in LaTiO2N photoanodes increases by a significant 30% between (001) and (011) oriented thin-film samples.

Photoinduced Enhancement of Photoluminescence Intensity in PPV Films

2001 ◽  
Vol 665 ◽  
Author(s):  
Yara Galvão Gobato ◽  
Alexandre Marletta ◽  
Jucimar M. Souza ◽  
Ernesto Pereira ◽  
Roberto M. Faria ◽  
...  
Keyword(s):  
Laser Power ◽  
Blue Shift ◽  
Sample Thickness ◽  
Phenylene Vinylene ◽  
Photoluminescence Intensity ◽  
Carbonyl Groups ◽  
Conjugation Length ◽  
Ion Laser ◽  
Pl Intensity ◽  
Effective Conjugation Length

ABSTRACTPoly(p-phenylene vinylene) (PPV) films are usually photodegraded in air. We report on the enhancement of photoluminescence (PL) intensity of PPV films induced by Ar ion laser in the presence of air. The PL spectra were measured as function of laser power, time exposure and sample thickness. The initial PL intensity increases up to 300% without significant changes in peak positions by optimizing such parameters. This effect is accompanied by a blue-shift in the absorption spectrum resulting in shortened effective conjugation length and by a formation of defects such as carbonyl groups. Mechanisms for the observed photoluminescence intensity enhancements are suggested.

Nanopatterning of graphene with crystallographic orientation control

Carbon ◽  
2010 ◽  
Vol 48 (10) ◽  
pp. 2677-2689 ◽  
Author(s):  
László P. Biró ◽  
Philippe Lambin
Keyword(s):  
Crystallographic Orientation ◽  
Orientation Control

scholarly journals Crystallographic orientation control and optical properties of GaN nanowires

RSC Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 2181-2187 ◽  
Author(s):  
Shaoteng Wu ◽  
Liancheng Wang ◽  
Xiaoyan Yi ◽  
Zhiqiang Liu ◽  
Jianchang Yan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crystallographic Orientation ◽  
Orientation Control ◽  
Gan Nanowires

We employ a versatile strategy to manipulate the crystallographic orientation of GaN NWs in a VLS-HVPE process.

Microstructure and Wear Characterization of Selflubricating Al2O3 - MoS2 Composite Ceramic Coatings

1988 ◽  
Vol 140 ◽  
Author(s):  
K.A. Koshkarian ◽  
W.M. Kriven
Keyword(s):  
Wear Resistance ◽  
Wear Rate ◽  
Crystallographic Orientation ◽  
Composite Ceramic ◽  
Ceramic Coatings ◽  
Molten State ◽  
Alumina Coatings ◽  
Pure Alumina ◽  
Wear Characterization

AbstractComposite ceramic coatings of alumina (A1203) containing some molybdenum disulfide (MoS2) were electro-codeposited on to Al metal substrates by a combination of anodic sparks deposition of A1203 and electrophoresis of MoS2. The microstructures were characterized by XRD, XPS, SEM, EDS, SNMS,TEM, SAD and relative wear resistance measurements. The coatings consisted mostly ofa-A1203 with some γ and βpresent as well. The coatings were porous and microcracked. SEM showed them to consist of circular “splats” which had rapidly crystallized from the molten state in areas ofdielectric breakdown in the coating. In the TEM the microstructure was seento contain “sets” of parallel, elongated grains having a single crystallographic orientation. The grains were separated by dislocated, low angle grain boundaries or microcracks. The sets intersected at irregularly curved interfaces and were mechanically interlocked. Quantitative SNMS indicated that up to 26 wt% MoS2 was incorporated in coatings fabricated from 5g\1 solutions. SEM\EDS as well as TEM\SAD\EDS identified 1-3μm particles of MoS2 incorporated into the 5g\1 solution derived coatings. These coatings exhibited a 50% lower wear rate than pure alumina coatings deposited under the same conditions.

Orientation Control of SOI Film by Laser Recrystallization

1986 ◽  
Author(s):  
K. Sugahara ◽  
S. Kusunoki ◽  
Y. Inoue ◽  
T. Nishimura ◽  
Y. Akasaka
Keyword(s):  
Orientation Control ◽  
Laser Recrystallization
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