Novel Thin Film Light Emitting Diode Display Made Of Amorphous Silicon-Based Semiconductors

1994 ◽  
Vol 345 ◽  
Author(s):  
Dusit Kruangam ◽  
Wirote Boonkosum ◽  
Somsak Panyakeow ◽  
Bancherd Delong

AbstractA novel Thin Film Light Emitting Diode (TFLED) flat panel display was developed. The TFLED is a carrier injection-type electroluminescence and made of hydrogenated amorphous silicon-based semiconductor p-i-n junctions. The amorphous layers employed in this work are for example, a-Si1−xCx:H and a-Si1−xNx:H. The TFLED has two basic structures; 1) glass substrate/ITO/amorphous p-i-n layers/Al and 2) metal sheet substrate amorphous n-i-p layers/ITO. The typical thicknesses of the amorphous p-i-n layers are 150 Å, 500 Å and 500 Å, respectively. The color of the emission can be changed from red to white-blue by increasing the optical energy gap (2.5−3.5 eV), that is the atomic fraction x, in the i-layer. The brightness of the TFLEDs are of the order of 1–10 cd/m2 with injection current density of 100–1000 mA/cm2 and applied voltage of 8–15 V.

1993 ◽  
Vol 297 ◽  
Author(s):  
Wirote Boonkosum ◽  
Dusit Kruangam ◽  
Somsak Panyakeow

A visible-light Thin Film Light Emitting Diode (TFLED) having a-SiN:H as a luminescent active layer has been developed. The TFLED has a structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. The emission color could be changed from red to orange, yellow, green and white-blue by varying the optical energy gap of the i a-SiN:H layer in the TFLED. The brightness was in the order of 0.1-1 cd/m2 . A series of systematic investigations on the basic properties of a-SiN:H films carrier injection and recombination mechanism in TFLEDs is described.


2018 ◽  
Vol 4 (11) ◽  
pp. 133
Author(s):  
HyungTae Kim ◽  
EungJoo Ha ◽  
KyungChan Jin ◽  
ByungWook Kim

A system for inspecting flat panel displays (FPDs) acquires scanning images using multiline charge-coupled device (CCD) cameras and industrial machine vision. Optical filters are currently installed in front of these inspection systems to obtain high-quality images. However, the combination of optical filters required is determined manually and by using empirical methods; this is referred to as passive color control. In this study, active color control is proposed for inspecting FPDs. This inspection scheme requires the scanning of images, which is achieved using a mixed color light source and a mixing algorithm. The light source utilizes high-power light emitting diodes (LEDs) of multiple colors and a communication port to dim their level. Mixed light illuminates an active-matrix organic light-emitting diode (AMOLED) panel after passing through a beam expander and after being shaped into a line beam. The image quality is then evaluated using the Tenenbaum gradient after intensity calibration of the scanning images. The dimming levels are determined using the simplex search method which maximizes the image quality. The color of the light was varied after every scan of an AMOLED panel, and the variation was iterated until the image quality approached a local maximization. The number of scans performed was less than 225, while the number of dimming level combinations was 20484. The proposed method can reduce manual tasks in setting-up inspection machines, and hence is useful for the inspection machines in FPD processes.


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