Visible-Light Amorphous Silicon-Nitride Thin Film Light Emitting Diode

1993 ◽  
Vol 297 ◽  
Author(s):  
Wirote Boonkosum ◽  
Dusit Kruangam ◽  
Somsak Panyakeow
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Energy Gap ◽  
Light Emitting Diode ◽  
Carrier Injection ◽  
Optical Energy Gap ◽  
Recombination Mechanism ◽  
Light Emitting ◽  
Orange Yellow ◽  
Emission Color

A visible-light Thin Film Light Emitting Diode (TFLED) having a-SiN:H as a luminescent active layer has been developed. The TFLED has a structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. The emission color could be changed from red to orange, yellow, green and white-blue by varying the optical energy gap of the i a-SiN:H layer in the TFLED. The brightness was in the order of 0.1-1 cd/m2 . A series of systematic investigations on the basic properties of a-SiN:H films carrier injection and recombination mechanism in TFLEDs is described.

Novel Thin Film Light Emitting Diode Display Made Of Amorphous Silicon-Based Semiconductors

1994 ◽  
Vol 345 ◽  
Author(s):  
Dusit Kruangam ◽  
Wirote Boonkosum ◽  
Somsak Panyakeow ◽  
Bancherd Delong
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Energy Gap ◽  
Light Emitting Diode ◽  
Atomic Fraction ◽  
Flat Panel Display ◽  
Carrier Injection ◽  
Optical Energy Gap ◽  
Light Emitting ◽  
Silicon Based

AbstractA novel Thin Film Light Emitting Diode (TFLED) flat panel display was developed. The TFLED is a carrier injection-type electroluminescence and made of hydrogenated amorphous silicon-based semiconductor p-i-n junctions. The amorphous layers employed in this work are for example, a-Si1−xCx:H and a-Si1−xNx:H. The TFLED has two basic structures; 1) glass substrate/ITO/amorphous p-i-n layers/Al and 2) metal sheet substrate amorphous n-i-p layers/ITO. The typical thicknesses of the amorphous p-i-n layers are 150 Å, 500 Å and 500 Å, respectively. The color of the emission can be changed from red to white-blue by increasing the optical energy gap (2.5−3.5 eV), that is the atomic fraction x, in the i-layer. The brightness of the TFLEDs are of the order of 1–10 cd/m2 with injection current density of 100–1000 mA/cm2 and applied voltage of 8–15 V.

An amorphous SiC thin film visible light-emitting diode with a μc-SiC:H electron injector

1991 ◽  
Vol 137-138 ◽  
pp. 1271-1274 ◽  
Author(s):  
Toshiro Futagi ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Kazuhiko Kawamura ◽  
Yasumitu Ohta ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Electron Injector ◽  
Amorphous Sic

Amorphous Visible-Light Thin Film Light-Emitting Diode Having a-SiN:H as a Luminescent Layer

1993 ◽  
Vol 32 (Part 1, No. 4) ◽  
pp. 1534-1538 ◽  
Author(s):  
Wirote Boonkosum ◽  
Dusit Kruangam ◽  
Somsak Panyakeow
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Light Emitting Diode ◽  
Light Emitting

Amorphous SiO:H thin film visible light emitting diode

1996 ◽  
Vol 198-200 ◽  
pp. 1226-1229 ◽  
Author(s):  
W. Boonkosum ◽  
D. Kruangam ◽  
B. Ratwises ◽  
T. Sujaridchai ◽  
S. Panyakeow ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Light Emitting Diode ◽  
Light Emitting
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